Silicon Power Transistors Type Case 3 Maximum Ratings at Typical Performance No. 83 { Tease = 25C #8 87 |Veso| ceo} Veso|'ccmey| Prot | f | Yee | Pin | Pour] "ce? | fr | Cog |sc/oc?) NOTES Vv Vv Vv A Ww MHz v Ww Ww % | MHz pF VHF NPN 2N3866 TO39 EP 55 30 4 0-5 5-0 400 | 28 0-1 1-2 45 800 25 _ Power XB401 TO39 EP 65 40 4 1:0 7-0 175 | 28 0-4 238 70 500 6-0 _ Devices 2N3375 TO60 EP 65 40 4 15 11-6 175 | 28 1:0 8-0 70 500 9-0 Vv XB404 TO60 EP 65.| 40 4 3-0 23 175 | 28 20 12:0 75 500 | 13-0 Vv 2N3632 TO60 EP 65 40 4 3-0 23 175 28 35 15-0 80 400 | 18-0 Vv XB408 TO60 Ep 65 40 4 5:0 30 175 | 28 9-0 27-0 80 400 | 18-0 v XB409 TO60 EP 65 40 4 T5 30 175 | 28 6-0 27-0 75 400 | 18-0 Vv Typical 10 W AM 2N4128 TON7 EP 65 40 4 5:0 35 175 25 6-0 27-0 75 400 | 18-0 Vv VHF NPN XB411 TO39 EP 40 25 4 1:0 5 175 135 | 0-25 1:2 45 500 | 160 ) FM Amplifier XB412 To117 EP 40 25 4 15 10 175 13-5 | 1:0 5:0 70 400 | 16-0 _ 13 W FM Kit XB413 TOIT EP 40 25 4 3-0 25 175 13:5 | 40 13-0 80 400 | 32-0 Vv VHF NPN XB421 TO39 EP 65 40 4 1-0 5 175 125 | 03. 1:0 60 400 16 _ AM Amplifier XB422 TO117 EP 65 40 4 15 10 175 12:5 1 3 65 "| 400 | 24 _ 10 W AM Kit XB423 TO117 EP 65 40 4 5-0 30 175 125 | 3 10 70 400 32 Vv Type Case s = Maximum Ratings at Characteristics T.a5_. = 25C No. ge Tease = 25C ee Deg Veesat) 8~ |, A | A |, A, Min. | Max. Veso | Vceo| Vewo | !cioey | Ptot | te | Min. | Max. | Ie Ie | Max.) fr | Tore Vv v Vv A Ww A A A Vv MHz us NPN Medium 2N1714 TO5 3DM 60 6 0-75 10? 0-2 20 60 0-2 | 0:02 | 2-0 16 Under max. ratings Power 2N1715 TOS 100 6 0-75 107 0-2 20 60 0-2 | 0-02 | 2:0 16 column Pi; should read 2N1716 TOS 60 6 0-75 10? 0-2 40 120 0-2 0-02 | 2:0 16 see note 4 2N1717 TOS 100 6 0:75 10? 0-2 40 120 0-2 0-02 | 2:0 16 2N1718 T.SLUG 60 6 0-75 10 0-2 20 60 0-2 0-02 | 2:0 16 2N1719 T.SLUG 100 6 0-75 10? 0-2 20 60 0-2 0-02 | 20 16 2N1720 T.SLUG 60 6 0-75 102 0-2 40 120 0-2 0:02 ; 2:0 16 2N1721 T.SLUG 100 6 0-75 107 0-2 40 120 0-2 0-02 | 2-0 16 2N4000 TOS 100 80 8 1 152 0-5 30 120 10 0-1 0-5 40 2 2N4001 TO5 120 | 100 8 1 152 0-5 40 120 10 0-1 0-5 40 2 2N4300 TOS 100 80 8 2 15? 1-0 30 120 20 0-2 0-5 30 15 2N3418 TOS EP 85 60 8 3 10? 1-0 20 60 2-0 0-2 05 40 1:2 2N3419 TO5 125 80 8 3 10? 10 20 60 2:0 0-2 0:5 40 1-2 2N3420 TOS 85 60 8 3 10? 1-0 40 120 2:0 0-2 0-5 40 1:2 2N3421 TOS 125 80 8 3 10? 1:0 40 120 20 0-2 0-5 40 1:2 NOTE 1: The following symbols have been used throughout the Product Summary: Under Construction: A Alloyed D Diffused E Epitaxial G Grown M Mesa P Planar NOTE 2: Collector efficiency=(Pout = Poc) x 100. No account is taken of Pin. NOTE 3: Passes Texas Instruments load open/short circuit test. NOTE 4: Tease 100C. Under hre: * hte Under fr: o Fht A fhie t typical Under Dissipation: + dissipation at Tease = 25C 15