Type
BSZ110N06NS3 G
OptiMOSTM3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x RDS(on) product (FOM)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDVGS=10 V, TC=25 °C2) 20 A
VGS=10 V, TC=100 °C 20
VGS=10 V, TC=25 °C,
RthJA =60K/W3) 11
Pulsed drain current4) ID,pulse TC=25 °C 80
Avalanche energy, single pulse5) EAS ID=20 A, RGS=25 Ω55 mJ
Gate source voltage VGS ±20 V
2) Current is limited by bondwire; with an RthJC=2.5 K/W the chip is able to carry 53A.
5) See figure 13 for more detailed information
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Value
1) J-STD20 and JESD22
4) See figure 3 for more detailed information
VDS 60 V
RDS(on),max 11 mΩ
ID20 A
Product Summary
Type BSZ110N06NS3 G
Package PG-TSDSON-8
Marking 110N06N
Rev.2.4 page 1 2009-11-12
BSZ110N06NS3 G
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Power dissipation Ptot TC=25 °C 50 W
TA=25 °C,
RthJA=60 K/W3) 2.1
Operating and storage temperature Tj, Tstg -55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC - - 2.5 K/W
Device on PCB RthJA minimal footprint - - -
6 cm² cooling area3) --60
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=1 mA 60 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=23 µA 234
Zero gate voltage drain current IDSS
VDS=60 V, VGS=0 V,
Tj=25 °C - 0.1 1 µA
VDS=60 V, VGS=0 V,
Tj=125 °C - 10 100
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - 10 100 nA
RDS(on) VGS=10 V, ID=20 A - 8.8 11 mΩ
Gate resistance RG- 1.3 - Ω
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=20 A 16 32 - S
Value
Values
Drain-source on-state resistance
Rev.2.4 page 2 2009-11-12
BSZ110N06NS3 G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 2000 2700 pF
Output capacitance Coss - 440 590
Reverse transfer capacitance Crss -17-
Turn-on delay time td(on) -10-ns
Rise time tr-77-
Turn-off delay time td(off) -14-
Fall time tf-6-
Gate Char
g
e Characteristics6)
Gate to source charge Qgs -10-nC
Gate charge at threshold Qg(th) -6-
Gate to drain charge Qgd -2-
Switching charge Qsw -7-
Gate charge total Qg-2533
Gate plateau voltage Vplateau - 5.2 - V
Output charge Qoss VDD=30 V, VGS=0 V -2027
Reverse Diode
Diode continuous forward current IS- - 20 A
Diode pulse current IS,pulse --80
Diode forward voltage VSD
VGS=0 V, IF=20 A,
Tj=25 °C - 0.9 1.2 V
Reverse recovery time trr -28-ns
Reverse recovery charge Qrr -22-nC
6) See figure 16 for gate charge parameter definition
TC=25 °C
Values
VGS=0 V, VDS=30 V,
f=1 MHz
VDD=30 V, VGS=10 V,
ID=20 A, RG=3 Ω
VDD=30 V, ID=20 A,
VGS=0 to 10 V
VR=30 V, IF=20A ,
diF/dt=100 A/µs
Rev.2.4 page 3 2009-11-12
BSZ110N06NS3 G
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
102
101
100
10-1
102
101
100
10-1
VDS [V]
ID [A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
100
10-1
10-2
10-3
10-4
10-5
10-6
101
100
10-1
10-2
tp [s]
ZthJC [K/W]
0
10
20
30
40
50
60
0 50 100 150 200
TC [°C]
Ptot [W]
0
5
10
15
20
25
0 50 100 150 200
TC [°C]
ID [A]
Rev.2.4 page 4 2009-11-12
BSZ110N06NS3 G
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
5 V 5.5 V 6 V
7 V
10 V
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
0 20406080
ID [A]
RDS(on) [mΩ]
25 °C
150 °C
0
20
40
60
80
02468
VGS [V]
ID [A]
0
20
40
60
80
0 20406080
ID [A]
gfs [S]
5 V
5.5 V
6 V
7 V
10 V
0
10
20
30
40
50
60
70
80
01234
VDS [V]
ID [A]
Rev.2.4 page 5 2009-11-12
BSZ110N06NS3 G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=20 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
max
2
4
6
8
10
12
14
16
18
20
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [mΩ]
23 µA
230 µA
0
1
2
3
4
5
-60 -20 20 60 100 140 180
Tj [°C]
VGS(th) [V]
Ciss
Coss
Crss
104
103
102
101
1
10
100
1000
10000
0204060
VDS [V]
C [pF]
25 °C
150 °C
150°C 98%
25°C 98%
103
102
101
100
0 0.5 1 1.5 2
VSD [V]
IF [A]
Rev.2.4 page 6 2009-11-12
BSZ110N06NS3 G
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 ΩVGS=f(Qgate); ID=20 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
40
45
50
55
60
65
70
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
12 V
30 V
48 V
0
2
4
6
8
10
12
0102030
Qgate [nC]
VGS [V]
25 °C
100 °C
125 °C
0.1
1
10
100
1 10 100 1000
tAV [µs]
IAV [A]
Rev.2.4 page 7 2009-11-12
BSZ110N06NS3 G
Package Outline PG-TSDSON-8
Rev.2.4 page 8 2009-11-12
BSZ110N06NS3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
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on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
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reasonably be expected to cause the failure of that life-support device or system or to affect
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Rev.2.4 page 9 2009-11-12
