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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. BC556 / BC557 / BC558 / BC559 / BC560 PNP Epitaxial Silicon Transistor Features * * * * Switching and Amplifier High-Voltage: BC556, VCEO = -65 V Low-Noise: BC559, BC560 Complement to BC546, BC547, BC548, BC549, and BC550 TO-92 12 3 Straight Lead Bulk Packing 1 2 1. Collector 2. Base 3. Emitter 3 Bent Lead Tape & Reel Ammo Packing Ordering Information Part Number Marking Package Packing Method BC556ABU BC556A TO-92 3L Bulk BC556ATA BC556A TO-92 3L Ammo BC556BTA BC556B TO-92 3L Ammo BC556BTF BC556B TO-92 3L Tape and Reel BC556BTFR BC556B TO-92 3L Tape and Reel BC557ATA BC557A TO-92 3L Ammo BC557BTA BC557B TO-92 3L Ammo BC557BTF BC557B TO-92 3L Tape and Reel BC558BTA BC558B TO-92 3L Ammo BC559BTA BC559B TO-92 3L Ammo BC559CTA BC559C TO-92 3L Ammo BC560CTA BC560C TO-92 3L Ammo (c) 2002 Fairchild Semiconductor Corporation BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 www.fairchildsemi.com 1 BC556 / BC557 / BC558 / BC559 / BC560 -- PNP Epitaxial Silicon Transistor January 2016 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage Value BC556 -80 BC557 / BC560 -50 BC558 / BC559 -30 BC556 -65 BC557 / BC560 -45 BC558 / BC559 -30 Unit V V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA ICP Peak Collector Current (Pulse) -200 mA IBP Peak Base Current (Pulse) -200 mA TJ Junction Temperature 150 C -65 to +150 C Max. Unit TSTG Storage Temperature Range Thermal Characteristics(1) Values are at TA = 25C unless otherwise noted. Symbol PD RJA Parameter Total Power Dissipation 500 mW Derate Above 25C 4.0 mW/C Thermal Resistance, Junction-to-Ambient 250 C/W Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. (c) 2002 Fairchild Semiconductor Corporation BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 www.fairchildsemi.com 2 BC556 / BC557 / BC558 / BC559 / BC560 -- PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Values are at TA = 25C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit -15 nA ICBO Collector Cut-Off Current VCB = -30 V, IE = 0 hFE DC Current Gain VCE = -5 V, IC = -2 mA VCE(sat) Collector-Emitter Saturation Voltage IC = -10 mA, IB = -0.5 mA -90 -300 IC = -100 mA, IB = -5 mA -250 -650 VBE(sat) Collector-Base Saturation Voltage IC = -10 mA, IB = -0.5 mA -700 IC = -100 mA, IB = -5 mA -900 VBE(on) Base-Emitter On Voltage fT Cob NF 110 VCE = -5 V, IC = -2 mA -600 -660 VCE = -5 V, IC = -10 mA VCE = -5 V, IC = -10 mA, f = 10 MHz Output Capacitance VCB = -10 V, IE = 0, f = 1 MHz BC556 / BC557 / BC558 VCE = -5 V, IC = -200 A, f = 1 kHz, RG = 2 k BC559 / BC560 VCE = -5 V, IC = -200 A, RG = 2 k, f = 30 to 15000 MHz BC559 BC560 -750 150 mV MHz 6 2 mV mV -800 Current Gain Bandwidth Product Noise Figure 800 pF 10 1 4 1.2 4.0 1.2 2.0 dB hFE Classification Classification A B C hFE 110 ~ 220 200 ~ 450 420 ~ 800 (c) 2002 Fairchild Semiconductor Corporation BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 www.fairchildsemi.com 3 BC556 / BC557 / BC558 / BC559 / BC560 -- PNP Epitaxial Silicon Transistor Electrical Characteristics 1000 -50 IB = -400A IB = -350A -40 IB = -300A -35 IB = -250A -30 IB = -200A -25 -20 IB = -150A -15 IB = -100A -10 o TA = 25 C o TA = -55 C 100 IB = -50A -5 10 -0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -1 Figure 1. Static Characteristic -100 -1000 Figure 2. DC Current Gain -1000 -10 IC = 20 IB IC [mA], COLLECTOR CURRENT IC = 20 IB SATURATION VOLTAGE -10 IC [mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE VCE(sat) [V], COLLECTOR-EMITTER VCE = -5V o TA = 150 C hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT -45 -1 o TA = 25 C o TA = 150 C -0.1 o TA = -55 C -10 -100 -10 o TA = 150 C -1 -0.0 -0.01 -1 -100 -1000 -0.2 o o TA = 25 C -0.4 -0.6 TA = -55 C -0.8 -1.0 -1.2 VBE(sat) [V], BASE-EMITTER SATURATION VOLTAGE IC [mA], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage VCE = -5V Cob(pF), CAPACITANCE IC [mA], COLLECTOR CURRENT -1000 -100 -10 o TA = 150 C o TA = 25 C f=1MHz IE = 0 10 o TA = -55 C 1 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1 -1.2 VBE(on) [V], BASE-EMITTER ON VOLTAGE -100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Base-Emitter On Voltage (c) 2002 Fairchild Semiconductor Corporation BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 -10 Figure 6. Collector Output Capacitance www.fairchildsemi.com 4 BC556 / BC557 / BC558 / BC559 / BC560 -- PNP Epitaxial Silicon Transistor Typical Performance Characteristics 1000 VCE = -5V POWER DISSIPATION, PD [mW] fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 1000 100 10 1 10 -1 -10 0 50 100 150 o AMBIENT TEMPERATURE, [ C] IC[mA], COLLECTOR CURRENT Figure 7. Current Gain Bandwidth Product r(t), Normalized Transient Thermal Resistance 100 Figure 8. Power Deration 1000 100 50% 30% 10% 10 Rthja(t)=r(t)*Rthja o Rthja=250 C/W 5% 2% D=1% 1 0.1 0.01 1E-5 Single Pulse 1E-4 1E-3 0.01 0.1 1 10 100 1000 t1, time(sec) Figure 9. Normalized Transient Thermal Resistance (c) 2002 Fairchild Semiconductor Corporation BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 www.fairchildsemi.com 5 BC556 / BC557 / BC558 / BC559 / BC560 -- PNP Epitaxial Silicon Transistor Typical Performance Characteristics (Continued) BC556 / BC557 / BC558 / BC559 / BC560 -- PNP Epitaxial Silicon Transistor Physical Dimensions Figure 10. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION, BULK (c) 2002 Fairchild Semiconductor Corporation BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 www.fairchildsemi.com 6 BC556 / BC557 / BC558 / BC559 / BC560 -- PNP Epitaxial Silicon Transistor Physical Dimensions (Continued) Figure 11. 3-LEAD, TO92, MOLDED 0.200 IN LINE SPACING LEAD FORM, AMMO, TAPE AND REEL (c) 2002 Fairchild Semiconductor Corporation BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 www.fairchildsemi.com 7 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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