Jun-16-2003
1
BFR360T
VPS05996
1
2
3
NPN Silicon RF Transistor
Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR360T FBs 1 = B 2 = E 3 = C SC75
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 6 V
Collector-emitter voltage VCES 15
Collector-base voltage VCBO 15
Emitter-base voltage VEBO 2
Collector current IC35 mA
Base current IB4
Total power dissipation1)
TS
81°C
Ptot 210 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS
325 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
Jun-16-2003
2
BFR360T
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 6 9 - V
Collector-emitter cutoff current
VCE = 15 V, VBE = 0
ICES - - 10 µA
Collector-base cutoff current
VCB = 5 V, IE = 0
ICBO - - 100 nA
Emitter-base cutoff current
VEB = 1 V, IC = 0
IEBO - - 1 µA
DC current gain
IC = 15 mA, VCE = 3 V
hFE 60 130 200 -
Jun-16-2003
3
BFR360T
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 15 mA, VCE = 3 V, f = 1 GHz
fT10 14 - GHz
Collector-base capacitance
VCB = 5 V, f = 1 MHz, emitter grounded
Ccb - 0.34 0.5 pF
Collector emitter capacitance
VCE = 5 V, f = 1 MHz, base grounded
Cce - 0.2 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, collector grounded
Ceb - 0.4 -
Noise figure
IC = 3 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt,
f = 1.8 GHz
Fmin - 1 - dB
Power gain, maximum available1)
IC = 15 mA, VCE = 3 V, ZS = ZSopt ,
ZL = ZLopt , f = 1.8 GHz
IC = 15 mA, VCE = 3 V, ZS = ZSopt ,
ZL = ZLopt , f = 3 GHz
Gma
-
-
13.5
9.5
-
-
Transducer gain
IC = 15 mA, VCE = 3 V, ZS = ZL = 50
,
f = 1.8 GHz
IC = 15 mA, VCE = 3 V, ZS = ZL = 50
,
f = 3 GHz
|S21e|2
-
-
12
8
-
-
dB
Third order intercept point at output2)
VCE = 3 V, IC = 15 mA, f = 1.8 GHz,
ZS = ZL = 50
IP3- 25 - dBm
1dB Compression point at output
IC = 15 mA, VCE = 3 V, ZS = ZL = 50
,
f = 1.8 GHz
P-1dB - 9 -
1Gma = |S21e / S12e| (k-(k²-1)1/2)
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
from 0.1 MHz to 6 GHz
Jun-16-2003
4
BFR360T
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:
NF = 1-
ISE = 150 fA
NR = 1-
ISC = 20 fA
IRB = 74 µA
RC = 0.35
MJE = 0.5 -
VTF = 0.198 V
CJC = 473 fF
XCJC = 0.129 -
VJS = 0.75 V
EG = 1.11 eV
NK = 0.5 K
IS = 0.0689 fA
VAF = 20 V
NE = 2.4 -
VAR = 60 V
NC = 1.4 -
RBM = 7.31
CJE = 400 fF
TF = 9.219 ps
ITF = 1.336 mA
VJC = 0.864 V
TR = 1.92 ns
MJS = 0-
XTI = 0-
AF = 1 -
BF = 147 -
IKF = 77.28 mA
BR = 6 -
IKR = 0.3 A
RB = 0.1
RE = 78.2 m
VJE = 1.3 V
XTF = 0.115 -
PTF = 0 deg
MJC = 0.486 -
CJS = 0 fF
XTB = 0 -
FC = 0.954
KF = 1E-14
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit:
L1 = 0.762 nH
L2 = 0.706 nH
L3 = 0.382 nH
C1 = 62 fF
C2 = 84 fF
C3 = 180 fF
C4 = 7fF
C5 =40 fF
C
6
= 48 fF
EHA07524
Transistor C’ L
E’
B’ 3
4
C
C
Chip
E
L1
5
C
B2
L
C6
C1
C2C3
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
Valid up to 6GHz
Package SC75
Package Outline
Foot Print
Marking Layout
Packing
Code E6327: Reel ø180 mm = 3.000 Pieces/Reel
Code E6433: Reel ø330 mm = 10.000 Pieces/Reel
1.6
±0.2
0.5
0.10 M0.5
A
0.2
0.2
+0.1
-0.05
1 2
-0.05
3
+0.1
1.6 ±0.2
DIN 6784
acc. to
+0.2
0.20 MA
0.7
0.15
10˚
MAX.
0.1 MAX.
±0.1
±0.1
±0.1
0.8
MAX.
10˚
1.15
0.65
0.4
0.4
0.65
0.50.5
Manufacturer
Type code BCR108T
Example
Pin 1
4
8
1.8
0.2 MAX.
0.9
1.4
1.75
0.45
Pin 1
Impressum
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2005.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.Infineon.com).
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