K3010P(G) Series
TELEFUNKEN Semiconductors
Rev . A2, 12-Dec-97 1 (11)
Optocoupler with Phototriac Output
Description
The K3010P(G) series consists of a phototransistor
optically coupled to a gallium arsenide infrared-emitting
diode in a 6-lead plastic dual inline package.
The elements are mounted on one leadframe using a
coplanar technique, providing a fixed distance between
input and output for highest safety requirements.
95 10531 95 10532
Applications
Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
D
For application class I – IV at mains voltage ≤ 300 V
D
For application class I – III at mains voltage ≤ 600 V
according to VDE 0884, table 2, suitable for:
Monitors, air conditioners, line switches, solid
state relays, microwaves.
These couplers perform safety functions according to the
the following equipment standards:
D
VDE 0884
Optocoupler providing protective separation
D
VDE 0804
Telecommunication apparatus and data processing
D
VDE 0805/IEC 950/EN 60950
Office machines (applied for reinforced isolation for
mains voltage ≤ 400 VRMS)
D
VDE 0860/IEC 65
Safety for mains operated electronic and related
household apparatus
Pin Connection
654
23
1
A (+) C (–) nc
95 10812
~~
Note: Pin 5 must not be connected
K3010P(G) Series
TELEFUNKEN Semiconductors
Rev . A2, 12-Dec-97
2 (11)
Features
D
Approvals:
BSI: BS EN 41003, BS EN 60065 (BS 415)
BS EN 60950 (BS 7002)
Certificate number 7081 and 7402
FIMKO (SETI): EN 60950
Certificate number 41400
Underwriters Laboratory (UL) 1577
recognized-file No. E-76222
VDE 0884 Certificate number 94778
VDE 0884 related features:
D
Rated impulse voltage (transient overvoltage)
VIOTM = 6 kV peak
D
Isolation test voltage (partial discharge test voltage)
Vpd = 1.6 kV
D
Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS (848 V peak)
D
Rated recurring peak voltage (repetitive)
VIORM = 600 VRMS
D
Creepage current resistance according to
VDE 0303/IEC 112
Comparative Tracking Index: CTI = 275
D
Thickness through insulation ≥ 0.75 mm
General features:
D
Isolation materials according to UL94-VO
D
Pollution degree 2
(DIN/VDE 0110 part 1 resp. IEC 664)
D
Climatic classification 55/100/21 (IEC 68 part 1)
D
Special construction:
Therefore extra low coupling capacity
typical 0.2 pF, high Common Mode Rejection
D
IFT offered in 3 groups
D
Coupling System C
Absolute Maximum Ratings
Input (Emitter)
Parameters Test Conditions Type Symbol Value Unit
Reverse voltage VR5 V
Forward current IF80 mA
Forward surge current tp ≤ 10
m
s IFSM 3 A
Power dissipation Tamb ≤ 25°C Pv100 mW
Junction temperature Tj100 °C
Output (Detector)
Parameters Test Conditions Type Symbol Value Unit
Off state output
terminal voltage K3010P(G)
K3011P(G)
K3012P(G) VDRM 250 V
On state RMS current ITRMS 100 mA
Peak surge current,
non-repetitive tp ≤ 10 ms ITMS 1.5 A
Power dissipation Tamb ≤ 25°C Pv300 mW
Junction temperature Tj100 °C
Coupler
Parameters Test Conditions Type Symbol Value Unit
Isolation test voltage (RMS) VIO 1) 3.75 kV
Total power
dissipation Tamb ≤ 25°C Ptot 350 mW
Ambient temperature range Tamb –40 to +85 °C
Storage temperature range Tstg –55 to +100 °C
Soldering temperature 2 mm from case, t ≤ 10 s Tsd 260 °C
K3010P(G) Series
TELEFUNKEN Semiconductors
Rev . A2, 12-Dec-97 3 (11)
1) Related to standard climate 23/50 DIN 50014
K3010P(G) Series
TELEFUNKEN Semiconductors
Rev . A2, 12-Dec-97
4 (11)
Maximum Safety Ratings 2) (according to VDE 0884)
Input (Emitter)
Parameters Test Conditions Symbol Value Unit
Forward current Isi 130 mA
Output (Detector)
Parameters Test Conditions Symbol Value Unit
Power dissipation Tamb ≤ 25°C Psi 600 mW
Coupler
Parameters Test Conditions Symbol Value Unit
Rated impulse voltage VIOTM 6 kV
Safety temperature Tsi 150 °C
2) This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Derating Diagram
0
75
150
225
300
375
450
525
600
675
0 25 50 75 100 125 150
Tamb ( °C )95 10925
Psi (mW)
Isi (mA)
K3010P(G) Series
TELEFUNKEN Semiconductors
Rev . A2, 12-Dec-97 5 (11)
Electrical Characteristics
Tamb = 25°C
Input (Emitter)
Parameters Test Conditions Type Symbol Min. Typ. Max. Unit
Forward voltage IF = 50 mA VF1.25 1.6 V
Junction capacitance VR = 0,
f = 1 MHz Cj50 pF
Output (Detector)
Parameters Test Conditions Type Symbol Min. Typ. Max. Unit
Forward peak
off-state voltage
(repetitive)
IDRM = 100 nA K3010P(G)
K3011P(G)
K3012P(G) VDRM 3) 250 V
Peak on-state
voltage ITM = 100 mA VTM 1.5 3 V
Critical rate of rise
of off-state voltage,
(see test circuit)
IFT = 0
IFT = 30 mA (dv/dt)cr
(dv/dt)crq 0.1 10
0.2 V/
m
s
V/
m
s
Coupler
Parameters Test Conditions Type Symbol Min. Typ. Max. Unit
AC isolation test
voltage (RMS) f = 50 Hz, t = 1 s VIO 4) 3.75 kV
Emitting diode
trigger current VS = 3 V,
RL = 150
W
K3010P(G)
K3011P(G)
K3012P(G)
IFT 8
5
2
15
10
5
mA
mA
mA
Holding current IF = 10 mA,
VS ≥ 3 V IH100
m
A
3) Test voltage must be applied within dv/dt ratings
4) Related to standard climate 23/50 DIN 50014
K3010P(G) Series
TELEFUNKEN Semiconductors
Rev . A2, 12-Dec-97
6 (11)
V~
RL
RS
IFT
95 10813
Test condition:
dv/dtcr
VS = 2/3 VDRM
(Sine wave)
RL= 33 k
W
dv/dtcrq
Veff = 30 V
(Sine wave)
RL = 2 k
W
Figure 1. Test circuit for dv/dtcr and dv/dtcrq
IF
w
IFT
IF = 0
dv / dt crq
95 10814
dv / dt cr
dv/dtcr Highest value of the “rate of rise of off-state voltage” which does not cause any switching from the
off-state to the on-state
dv/dtcr Highest value of the “rate of rise of commutating voltage” which does not switch on the device again,
after the voltage has decreased to zero and the trigger current is switched from I FT to zero
Figure 2.
Application
M
95 10815
270
W
TTL
+5 V
0.1
m
FVAC ~
Galvanical separation
Figure 3. Motor control circuit
K3010P(G) Series
TELEFUNKEN Semiconductors
Rev . A2, 12-Dec-97 7 (11)
Insulation Rated Parameters (according to VDE 0884)
Parameters Test Conditions Symbol Min. Typ. Max. Unit
Partial discharge
tt lt
Routine test 100%, ttest = 1 s Vpd 1.6 kV
test voltage VIOTM 6 kV
Lot test
(sample test) tTr = 10 s,
ttest = 60 ssee
(see figure 4)
Vpd 1.3 kV
VIO = 500 V RIO 1012
W
Insulation resis- VIO = 500 V,
Tamb = 100°C RIO 1011
W
tance VIO = 500 V,
Tamb = 150°C
(construction test only)
RIO 109
W
VIOTM
VPd
VIOWM
VIORM
V
t4
t3ttest
tstres
t2
t1
t
0
13930
tTr = 60 s
t1, t2= 1 to 10 s
t3, t4= 1 s
ttest = 10 s
tstres = 12 s
Figure 4. Test pulse for sample test according DIN VDE 0884
K3010P(G) Series
TELEFUNKEN Semiconductors
Rev . A2, 12-Dec-97
8 (11)
Typical Characteristics (Tamb = 25°C, unless otherwise specified)
0
100
200
300
400
0 20406080100
P – Total Power Dissipation ( mW )
Tamb – Ambient Temperature ( °C )96 11701
tot
Coupled device
Phototransistor
IR-diode
Figure 5. Total Power Dissipation vs. Ambient Temperature
0.1
1.0
10.0
100.0
1000.0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF – Forward Voltage ( V )96 11862
F
I – Forward Current ( mA )
Figure 6. Forward Current vs. Forward Voltage
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
–30 –20 –10 0 10 20 30 40 50 60 70 80
Tamb – Ambient Temperature ( °C )96 11922
VS=3V
RL=150
W
I – Relative Threshold Forward Current
FTrel
Figure 7. Rel. Thresh. Forw. Current vs. Ambient Temperature
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
–30 –20 –10 0 10 20 30 40 50 60 70 80
Tamb – Ambient Temperature ( °C )96 11923
V – Relative On–State Voltage
TMrel
IF
w
IFT
IT=100mA
Figure 8. Rel. On-State vs. Ambient Temperature
1
10
100
20 30 40 50 60 70 80 90 100
Tamb – Ambient Temperature ( °C )96 11924
VDR=100V
IF=0
I – Off–State Current ( nA )
DRM
Figure 9. Off-State Current vs. Ambient Temperature
–250
–200
–150
–100
–50
0
50
100
150
200
250
–2.5–2.0–1.5–1.0–0.5 0.0 0.5 1.0 1.5 2.0 2.5
VTM – On–State Voltage ( V )96 11925
I – On–State Current ( mA )
TM
IFT=15mA
Figure 10. On-state Current vs. On-State Voltage
K3010P(G) Series
TELEFUNKEN Semiconductors
Rev . A2, 12-Dec-97 9 (11)
Dimensions in mm
Leadform 10.16. mm (G-type)
14771
weight: ca. 0.50 g
creeping distance:
y
8 mm
air path:
y
8 mm
after mounting on PC board
K3010P(G) Series
TELEFUNKEN Semiconductors
Rev . A2, 12-Dec-97
10 (11)
Dimensions in mm
14770
weight: 0.50 g
creeping distance:
y
6 mm
air path:
y
6 mm
after mounting on PC board
K3010P(G) Series
TELEFUNKEN Semiconductors
Rev . A2, 12-Dec-97 11 (11)
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
