K3010P(G) Series Optocoupler with Phototriac Output Description The K3010P(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. 95 10531 95 10532 Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): D For application class I - IV at mains voltage 300 V D For application class I - III at mains voltage 600 V according to VDE 0884, table 2, suitable for: Monitors, air conditioners, line switches, solid state relays, microwaves. These couplers perform safety functions according to the the following equipment standards: Pin Connection ~ ~ 6 5 1 2 3 A (+) C (-) nc 4 D VDE 0884 Optocoupler providing protective separation D VDE 0804 Telecommunication apparatus and data processing Office machines (applied for reinforced isolation for mains voltage 400 VRMS) D VDE 0860/IEC 65 Safety for mains operated electronic and related household apparatus TELEFUNKEN Semiconductors Rev. A2, 12-Dec-97 95 10812 D VDE 0805/IEC 950/EN 60950 Note: Pin 5 must not be connected 1 (11) K3010P(G) Series Features D Approvals: D Creepage current resistance according to BSI: BS EN 41003, BS EN 60065 (BS 415) BS EN 60950 (BS 7002) Certificate number 7081 and 7402 FIMKO (SETI): EN 60950 Certificate number 41400 Underwriters Laboratory (UL) 1577 recognized-file No. E-76222 VDE 0884 Certificate number 94778 VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation 0.75 mm General features: D Isolation materials according to UL94-VO D Pollution degree 2 VDE 0884 related features: D Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) D Rated recurring peak voltage (repetitive) VIORM = 600 VRMS (DIN/VDE 0110 part 1 resp. IEC 664) D Climatic classification 55/100/21 (IEC 68 part 1) D Special construction: Therefore extra low coupling capacity typical 0.2 pF, high Common Mode Rejection D IFT offered in 3 groups D Coupling System C Absolute Maximum Ratings Input (Emitter) Parameters Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Type Symbol VR IF IFSM Pv Tj Value 5 80 3 100 100 Unit V mA A mW C Type K3010P(G) K3011P(G) K3012P(G) Symbol Value Unit VDRM 250 V ITRMS ITMS 100 1.5 mA A Pv Tj 300 100 mW C Symbol VIO 1) Ptot Value 3.75 350 Unit kV mW Tamb Tstg Tsd -40 to +85 -55 to +100 260 C C C tp 10 ms Tamb 25C Output (Detector) Parameters Off state output terminal voltage On state RMS current Peak surge current, non-repetitive Power dissipation Junction temperature Test Conditions tp 10 ms Tamb 25C Coupler Parameters Isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature 2 (11) Test Conditions Tamb 25C 2 mm from case, t 10 s Type TELEFUNKEN Semiconductors Rev. A2, 12-Dec-97 K3010P(G) Series 1) Related to standard climate 23/50 DIN 50014 TELEFUNKEN Semiconductors Rev. A2, 12-Dec-97 3 (11) K3010P(G) Series Maximum Safety Ratings 2) (according to VDE 0884) Input (Emitter) Parameters Forward current Test Conditions Symbol Isi Value 130 Unit mA Test Conditions Tamb 25C Symbol Psi Value 600 Unit mW Test Conditions Symbol VIOTM Tsi Value 6 150 Unit kV C Output (Detector) Parameters Power dissipation Coupler Parameters Rated impulse voltage Safety temperature 2) This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Derating Diagram 675 600 Psi (mW) 525 450 375 300 225 Isi (mA) 150 75 0 0 95 10925 4 (11) 25 50 75 100 125 150 Tamb ( C ) TELEFUNKEN Semiconductors Rev. A2, 12-Dec-97 K3010P(G) Series Electrical Characteristics Tamb = 25C Input (Emitter) Parameters Forward voltage Junction capacitance Test Conditions IF = 50 mA VR = 0, f = 1 MHz Type Symbol VF Cj Min. Typ. 1.25 50 Max. 1.6 Unit V pF Type Symbol K3010P(G) K3011P(G) VDRM 3) K3012P(G) VTM Min. Typ. Max. Unit Output (Detector) Parameters Forward peak off-state voltage (repetitive) Peak on-state voltage Critical rate of rise of off-state voltage, (see test circuit) Test Conditions IDRM = 100 nA ITM = 100 mA IFT = 0 IFT = 30 mA 250 V 1.5 (dv/dt)cr (dv/dt)crq 0.1 Type Symbol VIO 4) Min. 3.75 K3010P(G) K3011P(G) K3012P(G) IFT 3 V V/ms V/ms 10 0.2 Coupler Parameters AC isolation test voltage (RMS) Emitting diode trigger current Test Conditions f = 50 Hz, t = 1 s Holding current IF = 10 mA, VS 3 V VS = 3 V, RL = 150 W 3) Test voltage must be applied within dv/dt ratings 4) Related to standard climate 23/50 DIN 50014 TELEFUNKEN Semiconductors Rev. A2, 12-Dec-97 IH Typ. Max. Unit kV 8 5 2 100 15 10 5 mA mA mA mA 5 (11) K3010P(G) Series RS V~ IFT RL Test condition: dv/dtcr VS = 2/3 VDRM (Sine wave) RL= 33 kW dv/dtcrq Veff = 30 V (Sine wave) RL = 2 kW 95 10813 Figure 1. Test circuit for dv/dtcr and dv/dtcrq IF wI 95 10814 FT IF = 0 dv / dt dv/dtcr dv/dtcr dv / dt crq cr Highest value of the "rate of rise of off-state voltage" which does not cause any switching from the off-state to the on-state Highest value of the "rate of rise of commutating voltage" which does not switch on the device again, after the voltage has decreased to zero and the trigger current is switched from IFT to zero Figure 2. Application 270 +5 V W M 0.1 mF VAC ~ TTL Galvanical separation 95 10815 Figure 3. Motor control circuit 6 (11) TELEFUNKEN Semiconductors Rev. A2, 12-Dec-97 K3010P(G) Series Insulation Rated Parameters (according to VDE 0884) Parameters Partial discharge Routine test t t voltage test lt Lot test (sample test) Insulation resistance Test Conditions 100%, ttest = 1 s tTr = 10 s, ttest = 60 ssee (see figure 4) VIO = 500 V VIO = 500 V, Tamb = 100C VIO = 500 V, Tamb = 150C Symbol Vpd Min. 1.6 Typ. Max. Unit kV VIOTM 6 kV Vpd 1.3 kV RIO 1012 W RIO 1011 W RIO 109 W (construction test only) VIOTM V t1, t2 t3, t4 ttest tstres = 1 to 10 s =1s = 10 s = 12 s VPd VIOWM VIORM tTr = 60 s 0 t3 ttest t4 t1 t2 tstres t 13930 Figure 4. Test pulse for sample test according DIN VDE 0884 TELEFUNKEN Semiconductors Rev. A2, 12-Dec-97 7 (11) K3010P(G) Series Typical Characteristics (Tamb = 25C, unless otherwise specified) 1.5 VTMrel - Relative On-State Voltage P tot - Total Power Dissipation ( mW ) 400 Coupled device 300 Phototransistor 200 IR-diode 100 0 0 20 40 60 80 1.1 1.0 0.9 0.8 0.7 0.6 I DRM - Off-State Current ( nA ) 100 100.0 10.0 1.0 VDR=100V IF=0 10 0.1 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage ( V ) 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) 250 1.4 1.2 30 Figure 9. Off-State Current vs. Ambient Temperature 1.5 200 VS=3V RL=150W 1.1 1.0 0.9 0.8 0.7 150 100 IFT=15mA 50 0 -50 -100 -150 0.6 -200 0.5 -30 -20 -10 0 10 20 30 40 50 60 70 80 -250 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 96 11922 Tamb - Ambient Temperature ( C ) Figure 7. Rel. Thresh. Forw. Current vs. Ambient Temperature 8 (11) 20 96 11924 ITM - On-State Current ( mA ) I FTrel - Relative Threshold Forward Current Figure 6. Forward Current vs. Forward Voltage 1.3 Tamb - Ambient Temperature ( C ) Figure 8. Rel. On-State vs. Ambient Temperature 1000.0 I F - Forward Current ( mA ) 1.2 96 11923 Figure 5. Total Power Dissipation vs. Ambient Temperature 96 11862 IF IFT IT=100mA 1.3 0.5 -30 -20 -10 0 10 20 30 40 50 60 70 80 100 Tamb - Ambient Temperature ( C ) 96 11701 w 1.4 96 11925 VTM - On-State Voltage ( V ) Figure 10. On-state Current vs. On-State Voltage TELEFUNKEN Semiconductors Rev. A2, 12-Dec-97 K3010P(G) Series Dimensions in mm Leadform 10.16. mm (G-type) 14771 weight: ca. creeping distance: air path: 0.50 g 8 mm 8 mm y y after mounting on PC board TELEFUNKEN Semiconductors Rev. A2, 12-Dec-97 9 (11) K3010P(G) Series Dimensions in mm 14770 weight: creeping distance: air path: 0.50 g 6 mm 6 mm y y after mounting on PC board 10 (11) TELEFUNKEN Semiconductors Rev. A2, 12-Dec-97 K3010P(G) Series Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 TELEFUNKEN Semiconductors Rev. A2, 12-Dec-97 11 (11)