SPP08N80C3
CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application (i.e. active clamp forward)
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25 °C A
TC=100 °C
Pulsed drain current2) ID,pulse TC=25 °C
Avalanche energy, single pulse EAS ID=1.6 A, VDD=50 V 340 mJ
Avalanche energy, repetitive tAR2),3) EAR ID=8 A, VDD=50 V
Avalanche current, repetitive tAR2),3) IAR A
MOSFET dv/dt ruggedness dv/dtVDS=0…640 V V/ns
Gate source voltage VGS static V
AC (f>1 Hz)
Power dissipation Ptot TC=25 °C W
Operating and storage temperature Tj, Tstg °C
Mounting torque M3 and M3.5 screws 60 Ncm
Value
8
5.1
24
±30
104
-55 ... 150
0.2
8
50
±20
VDS 800
V
RDS(on)max @ Tj = 25°C 0.65 Ω
Qg,typ 45 nC
Product Summary
Type Package Marking
SPP08N80C3 PG-TO220-3 08N80C3
PG-TO220-3
Rev. 2.91page 1 2011-09-27
SPP08N80C3
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous diode forward current ISA
Diode pulse current2) IS,pulse 24
Reverse diode dv/dt4) dv/dt4V/ns
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC - - 1.2 K/W
RthJA leaded - - 62
Soldering temperature,
wave soldering only allowed at leads
Tsold 1.6 mm (0.063 in.)
from case for 10s - - 260 °C
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=250 µA 800 - - V
Avalanche breakdown voltage V(BR)DS VGS=0 V, ID=8 A -870 -
Gate threshold voltage VGS(th) VDS=VGS, ID=0.47 mA 2.1 33.9
Zero gate voltage drain current IDSS VDS=800 V, VGS=0 V,
Tj=25 °C - - 20 µA
VDS=800 V, VGS=0 V,
Tj=150 °C -100 -
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=10 V, ID=5.1 A,
Tj=25 °C -0.56 0.65 Ω
VGS=10 V, ID=5.1 A,
Tj=150 °C -1.5 -
Gate resistance RGf=1 MHz, open drain -1.2 -Ω
Values
Thermal resistance, junction -
ambient
Value
TC=25 °C 8
Rev. 2.91page 2 2011-09-27
SPP08N80C3
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss -1100 -pF
Output capacitance Coss -46 -
Effective output capacitance, energy
related5) Co(er) -36 -
Effective output capacitance, time
related6) Co(tr) -99 -
Turn-on delay time td(on) -25 -ns
Rise time tr-15 -
Turn-off delay time td(off) -72 -
Fall time tf-10 -
Gate Charge Characteristics
Gate to source charge Qgs -6-nC
Gate to drain charge Qgd -22 -
Gate charge total Qg-45 60
Gate plateau voltage Vplateau -5.5 -V
Reverse Diode
Diode forward voltage VSD VGS=0 V, IF=IS=8 A,
Tj=25 °C -11.2 V
Reverse recovery time trr -550 -ns
Reverse recovery charge Qrr -7-µC
Peak reverse recovery current Irrm -24 -A
5) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
6) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Values
VGS=0 V, VDS=100 V,
f=1 MHz
VDD=400 V,
VGS=0/10 V, ID=8 A,
RG=10 ?, Tj
=25 °C
VDD=640 V, ID=8 A,
VGS=0 to 10 V
VGS=0 V, VDS=0 V
to 480 V
4) ISD=ID, di/dt=400A/µs, VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax , identical low side and high side switch
VR=400 V, IF=IS=8 A,
diF/dt=100 A/µs
2) Pulse width tp limited by Tj,max
3) Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
1) J-STD20 and JESD22
Rev. 2.91page 3 2011-09-27
SPP08N80C3
1 Power dissipation 2 Safe operating area
Ptot=f(TC)ID=f(VDS); TC=25 °C; D=0
parameter: tp
3 Max. transient thermal impedance 4 Typ. output characteristics
ZthJC=f(tP)ID=f(VDS); Tj=25 °C; tp=10µs
parameter: D=tp/Tparameter: VGS
0
20
40
60
80
100
120
0 25 50 75 100 125 150
TC [°C]
Ptot [W]
1 µs
10 µs
100 µs
1 ms
10 ms
DC
102
101
100
10-1
1 10 100 1000
VDS [V]
ID [A]
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-1
10-2
10-3
10-4
10-5
101
100
10-1
10-2
tp [s]
ZthJC [K/W]
4.5 V
5 V
5.5 V
6 V
10 V
20 V
0
10
20
30
0 5 10 15 20 25
VDS [V]
ID [A]
limited by on-state
resistance
Rev. 2.91page 4 2011-09-27
SPP08N80C3
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID=f(VDS); Tj=150 °C; tp=10µs RDS(on)=f(ID); Tj=150 °C
parameter: VGS parameter: VGS
7 Drain-source on-state resistance 8 Typ. transfer characteristics
RDS(on)=f(Tj); ID=5.1 A; VGS=10 V ID=f(VGS); |VDS|>2|ID|RDS(on)max; tp=10µs
parameter: Tj
typ
98 %
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [Ω]
25 °C
150 °C
0
5
10
15
20
25
30
0 2 4 6 8 10
VGS [V]
ID [A]
6 V
10 V
20 V
4.5 V
5 V
5.5 V
0
3
6
9
12
0 5 10 15 20 25
VDS [V]
ID [A]
4.5 V
5.5 V
5 V
6 V 6.5 V
10 V
20 V
1.2
1.6
2
2.4
2.8
3.2
0 3 6 9 12 15
ID [A]
RDS(on) [Ω]
Rev. 2.91page 5 2011-09-27
SPP08N80C3
9 Typ. gate charge 10 Forward characteristics of reverse diode
VGS=f(Qgate); ID=8 A pulsed IF=f(VSD); tp=10µs
parameter: VDD parameter: Tj
11 Avalanche energy 12 Drain-source breakdown voltage
EAS=f(Tj); ID=1.6 A; VDD=50 V VBR(DSS)=f(Tj); ID=0.25 mA
25 °C
150 °C
150°C (98%)
25°C (98°C)
102
101
100
10-1
00.5 11.5 2
VSD [V]
IF [A]
160 V
640 V
0
2
4
6
8
10
0 10 20 30 40 50
Qgate [nC]
VGS [V]
680
720
760
800
840
880
920
960
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
0
50
100
150
200
250
300
350
25 50 75 100 125 150
Tj [°C]
EAS [mJ]
Rev. 2.91page 6 2011-09-27
SPP08N80C3
13 Typ. capacitances 14 Typ. Coss stored energy
C=f(VDS); VGS=0 V; f=1 MHz Eoss=f(VDS)
0
1
2
3
4
5
6
7
8
9
0 100 200 300 400 500 600 700 800
VDS [V]
Eoss [µJ]
Ciss
Coss
Crss
104
103
102
101
100
0 100 200 300 400 500 600 700 800
VDS [V]
C [pF]
Rev. 2.91page 7 2011-09-27
SPP08N80C3
Definition of diode switching characteristics
Rev. 2.91page 8 2011-09-27
SPP08N80C3
PG-TO220-3: Outline
Dimensions in mm/inches
Rev. 2.91page 9 2011-09-27
SPP08N80C3
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
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including without limitation, warranties of non-infringement of intellectual property rights
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on the types in question, please contact the nearest Infineon Technologies Office.
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the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
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Rev. 2.91page 10 2011-09-27
