2N7002K-HF
RoHS Device
MOSFET
QW-JTR09 Page 1
REV: A
Features
-Small Signal MOSFET.
-ESD protected: 1000V.
Marking: 702
Equivalent Circuit
G : Gate
S : Source
D : Drain
Symbol
Rating Unit
Value
Drain-Source voltage
Drain current
VDSS
ID
60
±115
Vdc
mAdc
Maximum Ratings (at TA=25°C unless otherwise noted)
Drain-Gate Voltage (RGS=1.0 MΩ)
Gate-Source voltage
VDGR
ID
VGS
VGSM
@Continuous TC=25°C(Note 1)
@ TC=100°CContinuous (Note 1)
@Continuous
@Non-repetitive (tp 50μs)≤
±75
60
±40
Vdc
Vdc
N-Channel
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width ≤ ≤ 300µs, Duty Cycle 2.0%.
Note:
Company reserves the right to improve product design , functions and reliability without notice.
Dimensions in inches and (millimeter)
SOT-23
0.070 (1.78)
12
3
0.120 (3.04)
0.110 (2.80)
0.104 (2.64)
0.083 (2.10)
0.020 (0.50)
0.015 (0.37)
0.055 (1.40)
0.047 (1.20)
0.044 (1.11)
0.035 (0.89)
0.080 (2.04)
0.004 (0.100)
0.007 (0.18)
0.003 (0.08)
0.027 (0.69)
0.014 (0.35)
0.001 (0.013)
D
G
S
±20
@Pulsed (Note 2) IDM ±800
Vpk
Thermal Characteristics
Symbol
Characteristics Unit
Max. Value
mW/°C
Total Device Dissipation FR–5 Board (Note 3) PD225 mW
@TA = 25°C 1.8
Thermal Resistance, Junction to Ambient RΘJA 556 °C/W
mW/°C
Total Device Dissipation Alumina Substrate (Note 4) PD300 mW
@TA = 25°C 2.4
Thermal Resistance, Junction to Ambient RΘJA 417 °C/W
Junction and Storage Temperature TJ, TSTG -55 to +150 °C
3. FR-5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
Halogen Free
Page 2
QW-JTR09
MOSFET
Symbol
Conditions Typ.
Max.
Unit
VBR)DSS(
IDSS
IGSSF
IGSSR
VDS(ON)
gfs
RDS(ON)
VSD
Ciss
Coss
Crss
td(on)
td(off)
VGS=0V, ID=10μA
TJ=25°C
VGS=20V
VGS=-20V
VGS=10V, ID=500mA
VGS=5V, ID=50mA
VDS≥2.0VDS(ON), ID=200mA
VGS=10V, ID=500mA @TC=25°C
VGS=5V, ID=50mA @TC=25°C
IS=115mA, VGS=0V
VDS=25V, VGS=0V, f=1.0MHz
VDD=25V ID=500mA,,
RG=25Ω, RL=50Ω, VVGΕΝ=10
Min.
Drain-Source Breakdown Voltage
Gate–Body Leakage Current, Forward
Gate–Body Leakage Current, Reverse
Forward Transconductance
Static Drain-Source On-State Voltage
Diode Forward On-Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-Off Time Delay
60
80
1.0
1
3.75
0.375
7.5
13.5
-1.5
50
25
5.0
20
40
V
μA
μA
V
mS
Ω
V
pF
nS
Electrical Characteristics (at TA=25°C unless otherwise noted)
Note: 1. Pulse Test: Pulse Width ≦300μs , Duty ycle ≦2.0%.C
7
11
17
10
2.5
μA
-1
Company reserves the right to improve product design , functions and reliability without notice.
Characteristics
Zero Gate Voltage Drain Current
(VGS=0V, VDS=60V) TJ=125°C 500
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage VDS=VGS, ID=250 AμV( )GS th 11.5 2.5 V
On-State Drain Current VDS≥2.0 , VGS=10VVDS(ON) ID(ON) 500 mA
DYNAMIC CHARACTERISTICS
Static Drain-Source
On- ResistanceState
VGS=10V, ID=500mA @TC=125°C
VGS=5V, ID=50mA @TC=125°C
1.4
7.5
1.8
13.5
SWITCHING CHARACTERISTICS (Note 1)
BODY–DRAIN DIODE RATINGS
IS
Body Diode
Source Current Continuous -115 mA
ISM
Source Current Pulsed -800 mA
REV: A
RATING AND CHARACTERISTIC CURVES (2N7002K-HF)
Page 3
QW-JTR09
REV: A
0.4
RDS(ON), Drain-Source Static
On-Resistance
T, Temperature (°C)
-60
0.6
2.4
+20-20 +100+60
1.0
2.2
1.8
0.8
1.4
2.0
1.6
1.2
+140
VGS=10V, ID=200mA
VGS=5V, ID=0.05A
MOSFET
Company reserves the right to improve product design , functions and reliability without notice.
Fig.2 Transfer Characteristics
0
ID, Drain-Source Current (A)
VDS, Drain-Source Voltage (V)
0410
1.6
26 8
0.4
0.8
1.2
2.0
Fig.1 Ohmic Region
39
157
1.4
0.2
0.6
1.0
1.8
0
ID, Drain-Source Current (A)
VGS, Gate-Source Voltage (V)
0
1.0
0.2
0.4
0.6
0.8
410
26 8
39
157
VDS = 10V
Fig.3 Temperature Versus Static
Drain-Source On-Resistance
0.7
VGS(th), Threshold Voltage
T, Temperature (°C)
0.8
0.9
1.0
1.1
1.15
1.2
Fig.4 Temperature Versus Gate
Threshold Voltage
-60 +20-20 +100+60 +140
VDS=V , ID=1.0mAGS
9V
VGS=10V
8V
7V
6V
5V
4V
3V
-55°C
125°C
25°C
Page 4
QW-JTR09
REV: A
MOSFET
Company reserves the right to improve product design , functions and reliability without notice.
BCdD D2
D1
E F P P0P1
SOT-23
SYMBOL
A
W W1
(mm)
(inch) 0.122 0.004±0.112 0.004±0.055 0.004±0.061 0.004±7.008 0.04±1.969 MIN. 0.512 0.008±
SOT-23
SYMBOL
(mm)
(inch) 0.069 0.004±0.138 0.002±0.157 0.004±0.157 0.004±0.079 0.004±0.315 0.008±0.567 MAX.
3.10 ± 0.10 2.85 0.10±
4.00 0.10±
1.55 0.10±
3.50 0.05±1.75 0.10±
50.0 MIN. 13.0 0.20±1.40 0.10±
4.00 0.10± 2.00 0.05± 8.00 0.30± 14.4 MAX.
178 1±
Reel Taping Specification
o
120
Trailer Device Leader
10 pitches (min)10 pitches (min)
.......
.......
....... ..............
....... ..............
End Start
D1
D2
D
W1
T
C
Direction of Feed
Index hole
d
E
F
B W
P
P0
P1
A
Page 5
QW-JTR09
REV: A
MOSFET
Company reserves the right to improve product design , functions and reliability without notice.
Suggested PAD Layout
SIZE
(inch)
0.031
(mm)
0.80
0.90
0.95
0.035
0.037
SOT-23
Part Number Marking Code
Marking Code
2.00 0.079
E2.90 0.114
B
D
C
A
A
B
C
D
3
1 2
E
Standard Packaging
Case Type
SOT-23 3,000
REEL
( pcs )
Reel Size
(inch)
7
REEL PACK
702 ∑ 702 ∑
“ • ” or ••“ ” or “–” :Traceablity code
Product marking code
∑ : Month Code
XXX
Month Code:
Even Year
1
2
3
4
5
6
E
F
H
J
K
L
Odd Year
Month
Jan
Feb
Wer
Apr
May
Jun
(per A.D.) (per A.D.)
Even Year
7
8
9
T
V
C
N
P
U
X
Y
Z
Odd Year
Month
Jul
Aug
Sep
Oct
Nov
Dec
(per A.D.) (per A.D.)
2N7002K-HF
