lications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION SYMBOL VALUE UNIT
Collector -Emitter Voltage VCEO 160 V
Collector -Base Voltage VCBO 180 V
Emitter -Base Voltage VEBO 6.0 V
Collector Current Continuous IC 600 mA
Power Dissipation @Ta=25 degC PD 625 mW
Derate Above 25 deg C 5.0 mw/deg C
Power Dissipation @Tc=25 degC PD 1.5 W
Derate Above 25 deg C 12 mw/deg C
Operating And Storage Junction Tj, Tstg -55 to +150 deg C
Temperature Range
THERMAL RESISTANCE
Junction to Case Rth(j-c) 125 deg C/W
Junction to Ambient Rth(j-a) (1) 357 deg C/W
(1) Rth (j-a) is measured with the device soldered into a typical printed circuit board
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector -Emitter Voltage VCEO IC=1mA,IB=0 160 - - V
Collector -Base Voltage VCBO IC=100uA.IE=0 180 - - V
Emitter -Base Voltage VEBO IE=10uA, IC=-0 6.0 - - V
Collector-Cut off Current ICBO VCB=160V, IE=0 - - 50 nA
Ta=100 deg C
VCB=160V, IE=0 - - 50 uA
Emitter-Cut off Current IEBO VEB=4V, IC=0 - - 50 nA
DC Current Gain hFE* IC=1mA,VCE=5V 80 - -
IC=10mA,VCE=5V 80 - 250
IC=50mA,VCE=5V 30 - -
Collector Emitter Saturation Voltage VCE(Sat)* IC=10mA,IB=1mA - - 0.15 V
IC=50mA,IB=5mA - - 0.2 V
Base Emitter Saturation Voltage VBE(Sat) * IC=10mA,IB=1mA - - 1.0 V
IC=50mA,IB=5mA - - 1.0 V
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IEC QC 700000
IS / IEC QC 750100
Continental Device India Limited Data Sheet Page 1 of 3