NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N-Channel, DPAK/IPAK Features * * * * * Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These are Pb-Free Devices http://onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 8.0 mW @ 10 V 30 V 63 A 12.4 mW @ 4.5 V Applications D * CPU Power Delivery * DC-DC Converters * Low Side Switching G MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS 20 V ID 13.8 A Continuous Drain Current RqJA (Note 1) TA = 25C Power Dissipation RqJA (Note 1) TA = 25C PD 2.63 W Continuous Drain Current RqJA (Note 2) TA = 25C ID 10 A Steady State TA = 85C 7.8 PD 1.4 W Continuous Drain Current RqJC (Note 1) TC = 25C ID 63 A Power Dissipation RqJC (Note 1) TC = 25C PD 54.6 W TA = 25C IDM 126 A TA = 25C IDmaxPkg 45 A TJ, TSTG -55 to +175 C IS 45 A TC = 85C tp=10ms Current Limited by Package Operating Junction and Storage Temperature Source Current (Body Diode) 49 Drain to Source dV/dt dV/dt 6 V/ns Single Pulse Drain-to-Source Avalanche Energy (VDD = 24 V, VGS = 10 V, IL = 17 Apk, L = 1.0 mH, RG = 25 W) EAS 144.5 mJ Lead Temperature for Soldering Purposes (1/8" from case for 10 s) TL 260 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. (c) Semiconductor Components Industries, LLC, 2012 May, 2012 - Rev. 7 4 10.7 TA = 25C Pulsed Drain Current 4 1 1 2 1 3 2 3 IPAK CASE 369D STYLE 2 DPAK CASE 369AA STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain YWW 48 08NG Power Dissipation RqJA (Note 2) TA = 85C S N-CHANNEL MOSFET YWW 48 08NG Parameter 2 1 Drain 3 Gate Source Y WW 4808N G 1 2 3 Gate Drain Source = Year = Work Week = Device Code = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Publication Order Number: NTD4808N/D NTD4808N, NVD4808N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction-to-Case (Drain) Parameter RqJC 2.75 Junction-to-TAB (Drain) RqJC-TAB 3.5 Junction-to-Ambient - Steady State (Note 1) RqJA 57 Junction-to-Ambient - Steady State (Note 2) RqJA 107 Unit C/W 1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS V 27 VGS = 0 V, VDS = 24 V mV/C TJ = 25 C 1 TJ = 125C 10 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA mA 100 nA 2.5 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On Resistance RDS(on) 5.6 VGS = 10 to 11.5 V VGS = 4.5 V Forward Transconductance 1.5 gFS ID = 30 A 6.7 ID = 15 A 6.6 ID = 30 A 10.3 ID = 15 A 9.8 VDS = 15 V, ID = 15 A mV/C 8.0 mW 12.4 11.4 S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 180 Total Gate Charge QG(TOT) 11.3 Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD Total Gate Charge QG(TOT) 1538 VGS = 0 V, f = 1 MHz, VDS = 12 V VGS = 4.5 V, VDS = 15 V; ID = 30 A 334 1.6 4.9 pF 13 nC 4.9 VGS = 11.5 V, VDS = 15 V; ID = 30 A 26 nC SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) 12.3 VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 21.3 14.6 6.0 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns NTD4808N, NVD4808N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) 7.7 VGS = 11.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 19.5 ns 23 3.5 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25C 0.93 TJ = 125C 0.83 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 30 A 1.2 V 20 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A 10.4 ns 9.6 QRR 9.7 nC Source Inductance LS 2.49 nH Drain Inductance, DPAK LD 0.0164 Drain Inductance, IPAK LD Gate Inductance LG 3.46 Gate Resistance RG 1.1 PACKAGE PARASITIC VALUES TA = 25C 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 1.88 W NTD4808N, NVD4808N TYPICAL PERFORMANCE CURVES ID, DRAIN CURRENT (AMPS) 4.5 V 80 TJ = 25C 80 70 60 4V 50 3.8 V 40 3.6 V 30 3.4 V 20 3.2 V 3V 10 0 1 3 2 4 5 60 50 40 30 TJ = 125C 20 TJ = 25C 10 TJ = -55C 2 1 Figure 2. Transfer Characteristics 9.2 8.8 8.4 8.0 7.6 7.2 6.8 6.4 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 10.5 11 11.5 0.020 TJ = 25C 0.018 0.016 0.014 VGS = 4.5 V 0.012 0.010 0.008 0.006 VGS = 11.5 V 0.004 0.002 0 10 15 20 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 10000 IDSS, LEAKAGE (nA) 1.2 1.1 1.0 0.9 0.8 0 25 50 75 100 125 150 35 40 45 50 55 60 VGS = 0 V 1000 TJ = 150C 100 TJ = 125C 10 1 0.7 0.6 -50 -25 30 Figure 4. On-Resistance vs. Drain Current and Gate Voltage ID = 30 A VGS = 10 V 1.3 25 ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Gate-to-Source Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 5 Figure 1. On-Region Characteristics 9.6 1.6 1.5 1.4 4 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID = 30 A TJ = 25C 1.8 1.7 3 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 10 6.0 VDS 10 V 70 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) 5.5 V to 10 V 90 ID, DRAIN CURRENT (AMPS) 100 175 0.1 TJ = 25C 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Drain Voltage http://onsemi.com 4 30 NTD4808N, NVD4808N C, CAPACITANCE (pF) 2000 VGS , GATE-TO-SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES TJ = 25C Ciss 1500 1000 500 0 Coss Crss 0 5 10 15 20 25 5 2 0 0 IS, SOURCE CURRENT (AMPS) 10 td(on) tf 2 3 4 5 6 7 8 9 10 QG, TOTAL GATE CHARGE (nC) 11 12 1 VDD = 15 V ID = 30 A VGS = 11.5 V 10 RG, GATE RESISTANCE (OHMS) VGS = 0 V 25 15 10 5 0 0.5 100 1 ms 0.1 10 ms dc 10 1 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 100 EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 100 ms RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.7 0.8 1.0 0.9 Figure 10. Diode Forward Voltage vs. Current 10 ms 10 0.6 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) VGS = 20 V SINGLE PULSE TC = 25C 100 TJ = 25C 20 Figure 9. Resistive Switching Time Variation vs. Gate Resistance I D, DRAIN CURRENT (AMPS) 1 30 tr td(off) 1 VDD = 15 V VGS = 4.5 V ID = 30 A TJ = 25C 1 Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge 100 1000 Q2 3 Figure 7. Capacitance Variation t, TIME (ns) Q1 4 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1 QT 100 90 ID = 17 A 80 70 60 50 40 30 20 10 0 50 Figure 11. Maximum Rated Forward Biased Safe Operating Area 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 175 NTD4808N, NVD4808N TYPICAL PERFORMANCE CURVES I D, DRAIN CURRENT (AMPS) 100 25C 100C 125C 10 1 1 100 10 PULSE WIDTH (ms) 1000 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 13. Avalanche Characteristics 1.0 D = 0.5 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 SINGLE PULSE 0.01 1.0E-05 1.0E-04 t1 t2 DUTY CYCLE, D = t1/t2 1.0E-03 1.0E-02 t, TIME (ms) RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 1.0E-01 1.0E+00 1.0E+01 Figure 14. Thermal Response ORDERING INFORMATION Package Shipping NTD4808NT4G DPAK (Pb-Free) 2500 / Tape & Reel NTD4808N-1G IPAK (Pb-Free) 75 Units / Rail NVD4808NT4G DPAK (Pb-Free) 2500 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 NTD4808N, NVD4808N PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA-01 ISSUE B A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 --- 0.040 0.155 --- 6.17 0.243 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 --- 1.01 3.93 --- NTD4808N, NVD4808N PACKAGE DIMENSIONS IPAK CASE 369D-01 ISSUE C C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 -T- SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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