Document Number: 91121 www.vishay.com
S11-1053-Rev. B, 30-May-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L
Vishay Siliconix
FEATURES
•Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount (IRFBF20S, SiHFBF20S)
•
Low-Profile Through-Hole (IRFBF20L, SiHFBF20L)
•
Available in Tape and Reel (IRFBF20S, SiHFBF20S)
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
•Fast Switching
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs form Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK is a surface mount power package capabel of
the accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application. The
through-hole version (IRFBF20L, SiHFBF20L) is available for
low-profile applications.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V; starting TJ = 25 °C, L = 117 mH, Rg = 25 , IAS = 1.7 A (see fig. 12).
c. ISD 1.7 A, dI/dt 70 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. Uses IRFBF20, SiHFBF20 data and test conditions.
PRODUCT SUMMARY
VDS (V) 900
RDS(on) ()V
GS = 10 V 8.0
Qg (Max.) (nC) 38
Qgs (nC) 4.7
Qgd (nC) 21
Configuration Single
N-Channel MOSFET
G
D
S
D2PAK (TO-263)
GD
S
I2PAK (TO-262)
ORDERING INFORMATION
Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHFBF20S-GE3 SiHFBF20STRL-GE3a SiHFBF20STRR-GE3a SiHFBF20L-GE3
Lead (Pb)-free IRFBF20SPbF IRFBF20STRLPbFa IRFBF20STRRPbFa IRFBF20LPbF
SiHFBF20S-E3 SiHFBF20STL-E3aSiHFBF20STR-E3aSiHFBF20L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source VoltageeVDS 900 V
Gate-Source VoltageeVGS ± 20
Continuous Drain Current VGS at 10 V TC = 25 °C ID
1.7
A
TC = 100 °C 1.1
Pulsed Drain Currenta,e IDM 6.8
Linear Derating Factor 0.43 W/°C
Single Pulse Avalanche Energyb, e EAS 180 mJ
Repetitive Avalanche CurrentaIAR 1.7 A
Repetitive Avalanche EnergyaEAR 5.4 mJ
Maximum Power Dissipation TC = 25 °C PD
54 W
TA = 25 °C 3.1
Peak Diode Recovery dV/dtc, e dV/dt 1.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C
Soldering Recommendations (Peak Temperature) for 10 s 300d
Mounting Torque 6-32 or M3 screw 10 N
* Pb containing terminations are not RoHS compliant, exemptions may apply