BUZ 32 H SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Pb-free BUZ 32 H 200 V 9.5 A 0.4 PG-TO-220-3 Yes S Maximum Ratings Parameter Symbol Continuous drain current ID TC = 29 C Pulsed drain current Values Unit A 9.5 IDpuls TC = 25 C 38 Avalanche current,limited by Tjmax IAR 9.5 Avalanche energy,periodic limited by Tjmax EAR 6.5 Avalanche energy, single pulse EAS mJ ID = 9.5 A, VDD = 50 V, RGS = 25 L = 2 mH, Tj = 25 C 120 Gate source voltage VGS Power dissipation Ptot TC = 25 C 20 W 75 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC 1.67 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 C K/W E 55 / 150 / 56 IEC climatic category, DIN IEC 68-1 Rev. 2.4 V Page 1 2009-11-10 BUZ 32 H Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage 200 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS A VDS = 200 V, VGS = 0 V, Tj = 25 C - 0.1 1 VDS = 200 V, VGS = 0 V, Tj = 125 C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 RDS(on) VGS = 10 V, ID = 6 A Rev. 2.4 nA - Page 2 0.3 0.4 2009-11-10 BUZ 32 H Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS 2 * ID * RDS(on)max, ID = 6 A Input capacitance 3 pF - 400 530 - 85 130 - 45 70 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 4.6 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Rise time - 10 15 - 40 60 - 55 75 - 30 40 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Fall time tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Rev. 2.4 Page 3 2009-11-10 BUZ 32 H Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS A TC = 25 C Inverse diode direct current,pulsed - 38 V 1.4 1.7 trr ns - 200 - Qrr VR = 100 V, IF=lS, diF/dt = 100 A/s Rev. 2.4 - - VR = 100 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge 9.5 VSD VGS = 0 V, IF = 19 A Reverse recovery time - ISM TC = 25 C Inverse diode forward voltage - C - Page 4 0.6 - 2009-11-10 BUZ 32 H Drain current ID = (TC) parameter: VGS 10 V Power dissipation Ptot = (TC) 10 80 A W Ptot ID 60 8 7 50 6 5 40 4 30 3 20 2 10 0 0 1 0 20 40 60 80 100 120 C 0 160 20 40 60 80 100 120 Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C C 160 TC TC Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 2 10 1 tp = 7.6s K/W 10 s A ZthJC DS /I D ID V 100 s R DS (o n) = 10 1 10 0 1 ms 10 -1 D = 0.50 0.20 10 ms 10 0 0.10 0.05 10 -2 0.02 DC 0.01 single pulse 10 -1 0 10 10 1 10 2 10 -3 -7 10 V VDS Rev. 2.4 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 0 tp Page 5 2009-11-10 BUZ 32 H Typ. output characteristics ID = (VDS) parameter: tp = 80 s 22 1.3 Ptot = 75W A ID Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS k j l i V [V] GS 18 16 c d e f g h 5.0 1.0 0.9 d 5.5 14 f 12 RDS (on) b 4.5 c g b 1.1 a 4.0 h a 0.8 e 6.0 f 6.5 0.7 g 7.0 10 e 0.6 h 7.5 8 d 6 i 8.0 j 9.0 0.5 k 10.0 l 20.0 c 4 0.4 i 0.3 k j 0.2 VGS [V] = b 2 a 4.0 4.5 0.1 a 0 0 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 0.0 2 4 6 8 10 12 V 16 0 4 8 12 16 A VDS Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s parameter: tp = 80 s, VDS2 x ID x RDS(on)max VDS2 x ID x RDS(on)max 13 6.0 A S 11 ID 22 ID 5.0 gfs 10 9 4.5 4.0 8 3.5 7 3.0 6 2.5 5 2.0 4 1.5 3 1.0 2 1 0.5 0 0.0 0 1 2 3 4 5 6 7 8 V 0 10 VGS Rev. 2.4 2 4 6 8 A 12 ID Page 6 2009-11-10 BUZ 32 H Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = (Tj) parameter: ID = 6 A, VGS = 10 V 1.3 4.6 V 1.1 RDS (on) 98% 4.0 VGS(th) 1.0 3.6 0.9 3.2 0.8 2.8 0.7 2.4 0.6 2% 2.0 98% 0.5 1.6 typ 0.4 typ 1.2 0.3 0.8 0.2 0.4 0.1 0.0 -60 -20 20 60 100 C 0.0 -60 160 -20 20 60 100 Typ. capacitances C 160 Tj Tj Forward characteristics of reverse diode IF = (VSD) parameter: Tj, tp = 80 s C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A IF C 10 0 10 1 Ciss 10 -1 10 0 Tj = 25 C typ Coss Tj = 150 C typ Crss Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 5 10 15 20 25 30 V 10 -1 0.0 40 Rev. 2.4 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD VDS Page 7 2009-11-10 BUZ 32 H Avalanche energy EAS = (Tj) parameter: ID = 9.5 A, VDD = 50 V RGS = 25 , L = 2 mH Typ. gate charge VGS = (QGate) parameter: ID puls = 14 A 130 16 mJ V 110 EAS VGS 100 12 90 10 80 0,8 VDS max 0,2 VDS max 70 8 60 50 6 40 4 30 20 2 10 0 20 0 40 60 80 100 120 C 160 0 Tj 4 8 12 16 20 24 28 32 nC 38 QGate Drain-source breakdown voltage V(BR)DSS = (Tj) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 C 160 Tj Rev. 2.4 Page 8 2009-11-10 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. 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