ON Semiconductor NPN Complementary Silicon Plastic Power Transistors BD243B BD243C * . . . designed for use in general purpose amplifier and switching applications. PNP BD244B * Collector - Emitter Saturation Voltage -- BD244C * VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc * Collector Emitter Sustaining Voltage -- * * VCEO(sus) = 80 Vdc (Min) -- BD243B, BD244B = 100 Vdc (Min) -- BD243C, BD244C High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc Compact TO-220 AB Package *ON Semiconductor Preferred Device 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80-100 VOLTS 65 WATTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIIIIII III IIII IIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III MAXIMUM RATINGS Symbol BD243B BD244B BD243C BD244C Unit VCEO 80 100 Vdc Collector-Base Voltage VCB 80 100 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current -- Continuous Peak IC 6 10 Adc Base Current IB 2.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD Rating Collector-Emitter Voltage Operating and Storage Junction Temperature Range 4 STYLE 1: PIN 1. 2. 3. 4. Watts TJ, Tstg 65 0.52 W/C -65 to +150 C 1 2 BASE COLLECTOR EMITTER COLLECTOR 3 CASE 221A-06 TO-220AB THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 1.92 C/W PD, POWER DISSIPATION (WATTS) 80 60 40 20 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 160 Figure 1. Power Derating Semiconductor Components Industries, LLC, 2002 April, 2002 - Rev. 10 1 Publication Order Number: BD243B/D BD243B BD243C BD244B BD244C IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Collector-Emitter Sustaining Voltage (1) (IC = 30 mAdc, mAdc IB = 0) Min Max 80 100 -- -- -- 0.7 -- -- 400 400 -- 1.0 30 15 -- -- Unit VCEO(sus) BD243B, BD243B BD244B BD243C, BD244C Collector Cutoff Current (VCE = 60 Vdc, IB = 0) ICEO Vdc mAdc BD243B, BD243C, BD244B, BD244C Collector Cutoff Current (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0) Adc ICES BD243B, BD244B BD243C, BD244C Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 6.0 Adc, IB = 1.0 Adc) VCE(sat) -- 1.5 Vdc Base-Emitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc) VBE(on) -- 2.0 Vdc Current-Gain -- Bandwidth Product (2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 -- MHz Small-Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 -- -- DYNAMIC CHARACTERISTICS (1) Pulse Test: Pulsewidth 300 s, Duty Cycle 2.0%. (2) fT = hfe * ftest 2.0 VCC - 30 V 25 s 0.7 0.5 RC + 11 V t, TIME (s) SCOPE RB 0 - 9.0 V tr, tf 10 ns DUTY CYCLE = 1.0% 51 TJ = 25C VCC = 30 V IC/IB = 10 1.0 D1 0.3 0.2 tr 0.1 0.07 0.05 -4V RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE eg. 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA 0.03 0.02 0.06 Figure 2. Switching Time Test Circuit td @ VBE(off) = 5.0 V 0.1 1.0 0.2 0.4 0.6 2.0 IC, COLLECTOR CURRENT (AMP) Figure 3. Turn-On Time http://onsemi.com 2 4.0 6.0 r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) BD243B BD243C BD244B BD244C 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 P(pk) 0.05 0.1 0.07 0.05 RJC(max) = 1.92C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 0.02 t1 0.03 0.01 0.02 0.01 0.01 SINGLE PULSE t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150C: TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150C, TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0.5 ms IC, COLLECTOR CURRENT (AMP) 5.0 3.0 1.0 ms 2.0 TJ = 150C 5.0 ms SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25C CURVES APPLY BELOW RATED VCEO 1.0 0.5 0.3 0.2 0.1 5.0 BD243B, BD244B BD243C, BD244C 10 20 40 60 80 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 5. Active Region Safe Operating Area 5.0 300 t, TIME (s) 2.0 ts 1.0 TJ = 25C VCC = 30 V IC/IB = 10 IB1 = IB2 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.06 tf 0.1 0.2 0.4 0.6 2.0 1.0 IC, COLLECTOR CURRENT (AMP) TJ = 25C 200 CAPACITANCE (pF) 3.0 Cib 100 70 Cob 50 30 0.5 4.0 6.0 Figure 6. Turn-Off Time 1.0 2.0 3.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 3 30 50 BD243B BD243C BD244B BD244C hFE, DC CURRENT GAIN 300 200 VCE = 2.0 V TJ = 150C 100 70 50 25C 30 20 -55C 10 7.0 5.0 0.06 0.1 0.2 0.3 0.4 0.6 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 4.0 2.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 6.0 TJ = 25C 1.6 IC = 1.0 A 0.8 0.4 0 20 10 V, TEMPERATURE COEFFICIENTS (mV/C) TJ = 25C VBE(sat) @ IC/IB = 10 VBE @ VCE = 4.0 V VCE(sat) @ IC/IB = 10 0 0.06 IC, COLLECTOR CURRENT (A) 103 102 0.1 0.2 0.3 0.4 0.6 2.0 3.0 4.0 6.0 + 25C to + 150C +0.5 *VC FOR VCE(sat) 0 - 55C to + 25C -0.5 + 25C to + 150C -1.0 -1.5 VB FOR VBE -2.0 -2.5 0.06 0.1 - 55C to + 25C 0.2 0.3 0.5 1.0 2.0 3.0 0.4 100C IC = ICES FORWARD 0 VCE = 30 V +0.1 +0.2 +0.3 IC = 10 x ICES IC = 2 x ICES 100k 25C +0.4 +0.5 +0.6 +0.7 0.6 10M 1.0M TJ = 150C -0.1 +1.0 Figure 11. Temperature Coefficients VCE = 30 V 10-3 -0.3 -0.2 +1.5 Figure 10. "On" Voltages REVERSE 1000 *APPLIES FOR IC/IB 5.0 +2.0 IC, COLLECTOR CURRENT (AMP) 100 10-2 500 IC, COLLECTOR CURRENT (AMPS) 101 10-1 1.0 50 100 200 300 IB, BASE CURRENT (mA) +2.5 RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) V, VOLTAGE (VOLTS) 1.6 0.4 30 Figure 9. Collector Saturation Region 2.0 0.8 5.0 A 1.2 Figure 8. DC Current Gain 1.2 2.5 A IC ICES 10k 1.0k (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 0.1k 20 40 60 80 100 120 140 160 VBE, BASEEMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C) Figure 12. Collector Cut-Off Region Figure 13. Effects of Base-Emitter Resistance http://onsemi.com 4 BD243B BD243C BD244B BD244C PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AA -T- B SEATING PLANE C F T S 4 A Q 1 2 3 U H K Z L R V J G D N STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR http://onsemi.com 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BD243B BD243C BD244B BD244C Notes http://onsemi.com 6 BD243B BD243C BD244B BD244C Notes http://onsemi.com 7 BD243B BD243C BD244B BD244C ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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