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IRGS4640DPbF
IRGSL4640DPbF
IRGB4640DPbF
IRGP4640D(-E)PbF
Base part number Package Type Standard Pack
Form Quantity
Tube 50 IRGS4640DPbF
IRGS4640DPbF D2Pak Tape and Reel Right 800 IRGS4640DTRRPbF
Tape and Reel Left 800 IRGS4640DTRLPbF
IRGB4640DPbF TO-220AB Tube 50 IRGB4640DPbF
IRGP4640DPbF TO-247AC Tube 25 IRGP4640DPbF
IRGP4640D-EPbF TO-247AD Tube 25 IRGP4640D-EPbF
Orderable Part Number
IRGSL4640DPbF TO-262 Tube 50 IRGSL4640DPbF
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 65
A
IC @ TC = 100°C Continuous Collector Current 40
ICM Pulse Collector Current, VGE = 15V 72
ILM Clamped Inductive Load Current, VGE = 20V 96
IF @ TC = 25°C Diode Continuous Forward Current 65
IF @ TC = 100°C Diode Continuous Forward Current 40
VGE Continuous Gate-to-Emitter Voltage ±20 V
PD @ TC = 25°C Maximum Power Dissipation 250 W
PD @ TC = 100°C Maximum Power Dissipation 125
TJ Operating Junction and -55 to +175
C
TSTG Storage Temperature Range
Soldering Temperature, for 10 sec. (1.6mm from case) 300
Mounting Torque, 6-32 or M3 Screw (TO-220, TO-247) 10 lbf·in (1.1 N·m)
IFM Diode Maximum Forward Current 96
Transient Gate to Emitter Voltage ±30
VCES = 600V
IC = 40A, TC =100°C
tSC ≥ 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.60V @ IC = 24A
Applications
• Industrial Motor Drive
• Inverters
• UPS
• Welding
Features Benefits
Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching
Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching
performance and high power capability
Positive VCE (ON) temperature coefficient Excellent current sharing in parallel operation
5µs Short Circuit SOA Enables short circuit protection scheme
Lead-Free, RoHS Compliant Environmentally friendly
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
G C E
Gate Collector Emitter
IRGP4640DPbF
TO-247AC
IRGP4640D-EPbF
TO-247AD
E
G
n-channel
C
C
E
G
IRGS4640DPbF
D2Pak
C
E
G
IRGB4640DPbF
TO-220AC
Notes through are on page 8
C
E
G C
E
G
IRGSL4640DPbF
TO-262Pak
E
G
C
IRGS/SL/B/P4640D/EPbF
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Thermal Resistance
Parameter Min. Typ. Max.
Units
Thermal Resistance Junction-to-Case (D2Pak, TO-220, TO-262) ––– ––– 0.60
°C/W
Thermal Resistance Junction-to-Case (TO-247) ––– ––– 0.60
RθJC (Diode)
Thermal Resistance Junction-to-Case (D2Pak, TO-220, TO-262) ––– ––– 1.53
Thermal Resistance Junction-to-Case (TO-247) ––– ––– 1.62
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface– TO 220, D2Pak, TO-262) ––– 0.50 –––
Thermal Resistance, Case-to-Sink (flat, greased surface– TO 247) ––– 0.24 –––
RθJA
Thermal Resistance, Junction-to-Ambient (PCB Mount - D2Pak, TO-262) ––– ––– 40
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-247) ––– ––– 40
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220) ––– ––– 62
RθJC (IGBT)
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 100µA
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage — 0.30 — V/°C VGE = 0V, IC = 1mA (25°C-175°C)
VCE(on) Collector-to-Emitter Saturation Voltage
— 1.60 1.90 IC = 24A, VGE = 15V, TJ = 25°C
— 1.90 — IC = 24A, VGE = 15V, TJ = 150°C
VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 700µA
ΔVGE(th)/ΔTJ Threshold Voltage Temp. Coefficient — -18 — mV/°C VCE = VGE, IC = 1.0mA (25°C-175°C)
gfe Forward Transconductance — 17 — S VCE = 50V, IC = 24A, PW = 80µs
ICES Collector-to-Emitter Leakage Current
— 2.0 25 µA VGE = 0V, VCE = 600V
— 775 — VGE = 0V, VCE = 600V, TJ = 175°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
VFM Diode Forward Voltage Drop
— 1.8 2.6 V IF = 24A
— 1.28 — IF = 24A, TJ = 175°C
— 2.0 — IC = 24A, VGE = 15V, TJ = 175°C
V
IRGS/SL/B/P4640D/EPbF
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Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max Units Conditions
Qg Total Gate Charge — 50 75
nC
IC = 24A
Qge Gate-to-Emitter Charge — 13 20 VGE = 15V
Qgc Gate-to-Collector Charge — 21 31 VCC = 400V
Eon Turn-On Switching Loss — 115 201
µJ IC = 24A, VCC = 400V, VGE=15V
RG = 10Ω, L = 200µH, LS = 150nH,
TJ = 25°C
Energy losses include tail & diode
reverse recovery
Eoff Turn-Off Switching Loss — 600 700
Etotal Total Switching Loss — 715 901
td(on) Turn-On delay time — 41 53
ns
tr Rise time — 22 31
td(off) Turn-Off delay time — 104 115
tf Fall time — 29 41
Eon Turn-On Switching Loss — 420 —
µJ IC = 24A, VCC = 400V, VGE=15V
RG = 10Ω, L = 200µH, LS = 150nH,
TJ = 175°C
Energy losses include tail & diode
reverse recovery
Eoff Turn-Off Switching Loss — 840 —
Etotal Total Switching Loss — 1260 —
td(on) Turn-On delay time — 40 —
ns
tr Rise time — 24 —
td(off) Turn-Off delay time — 125 —
tf Fall time — 39 —
Cies Input Capacitance — 1490 — VGE = 0V
Coes Output Capacitance — 129 — pF VCC = 30V
Cres Reverse Transfer Capacitance — 45 — f = 1.0MHz
RBSOA Reverse Bias Safe Operating Area
TJ = 175°C, IC = 96A
FULL SQUARE VCC = 480V, Vp ≤ 600V
RG = 10Ω, VGE = +20V to 0V
SCSOA Short Circuit Safe Operating Area 5.0 — — µs VCC = 400V, Vp ≤ 600V
RG = 10Ω, VGE = +15V to 0V
Erec Reverse Recovery Energy of the Diode — 621 — µJ TJ = 175°C
trr Diode Reverse Recovery Time — 89 — ns VCC = 400V, IF = 24A, VGE = 15V,
Irr Peak Reverse Recovery Current — 37 — A Rg = 10Ω, L = 200µH, LS = 150nH
IRGS/SL/B/P4640D/EPbF
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25 50 75 100 125 150 175
TC (°C)
0
10
20
30
40
50
60
70
IC (A)
25 50 75 100 125 150 175
TC (°C)
0
50
100
150
200
250
300
Ptot (W)
1 10 100 1000 10000
VCE (V)
0.1
1
10
100
1000
IC (A)
1msec
10µsec
100µsec
Tc = 25°C
Tj = 175°C
Single Pulse
DC
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
10 100 1000
VCE (V)
1
10
100
1000
IC (A)
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
Fig. 2 - Power Dissipation vs.
Case Temperature
012345678
VCE (V)
0
10
20
30
40
50
60
70
80
90
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 175°C; VGE = 15V
012345678
VCE (V)
0
10
20
30
40
50
60
70
80
90
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
IRGS/SL/B/P4640D/EPbF
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Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
012345678
VCE (V)
0
10
20
30
40
50
60
70
80
90
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.01.02.03.0
VF (V)
0
20
40
60
80
100
120
IF (A)
-40°c
25°C
175°C
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
5101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 12A
ICE = 24A
ICE = 48A
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80µs
5101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 12A
ICE = 24A
ICE = 48A
Fig. 8 - Typ. Diode Forward Voltage Drop
Characteristics
5101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 12A
ICE = 24A
ICE = 48A
051015
VGE (V)
0
20
40
60
80
100
120
ICE (A)
TJ = 25°C
TJ = 175°C
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
IRGS/SL/B/P4640D/EPbF
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0 102030405060
IC (A)
0
200
400
600
800
1000
1200
1400
1600
1800
Energy (µJ)
EOFF
EON
10 20 30 40 50
IC (A)
1
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
0 25 50 75 100 125
Rg (Ω)
0
200
400
600
800
1000
1200
1400
1600
Energy (µJ)
EOFF
EON
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V
025 50 75 100 125
RG (Ω)
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V
010 20 30 40 50 60
IF (A)
10
15
20
25
30
35
40
IRR (A)
RG = 10Ω
RG = 22Ω
RG = 47Ω
RG = 100Ω
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 24A; VGE = 15V
025 50 75 100 125
RG (Ω)
5
10
15
20
25
30
35
40
45
IRR (A)
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 24A; VGE = 15V
IRGS/SL/B/P4640D/EPbF
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0500 1000 1500
diF /dt (A/µs)
5
10
15
20
25
30
35
40
45
IRR (A)
0 500 1000 1500
diF /dt (A/µs)
500
1000
1500
2000
2500
3000
3500
4000
QRR (nC)
10Ω
22Ω
100Ω
47Ω
24A
48A
12A
010 20 30 40 50 60
IF (A)
0
200
400
600
800
1000
Energy (µJ)
RG = 10Ω
RG = 22Ω
RG = 47Ω
RG = 100Ω
Fig. 19 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 24A; TJ = 175°C
81012141618
VGE (V)
4
6
8
10
12
14
16
Time (µs)
40
80
120
160
200
240
280
Current (A)
Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
020 40 60 80 100
VCE (V)
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
Fig. 23 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
Fig. 21 - Typ. Diode ERR vs. IF
TJ = 175°C
0 5 10 15 20 25 30 35 40 45 50 55
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
VCES
= 300V
VCES
= 400V
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 24A; L = 600µH
Fig. 22 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
IRGS/SL/B/P4640D/EPbF
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Fig. 25 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT-TO247 Pak)
Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE– TO-247 Pak)
Notes:
V
CC = 80% (VCES), VGE = 20V, L = 100µH, RG = 10Ω.
R
θ is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Pulse width limited by maximum junction temperature.
Values influenced by parasitic L and C in measurement.
When mounted on 1” square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application
note #AN-994.http://www.irf.com/technical-info/appnotes/an-994.pdf
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
C
τ
C
Ci= τi/Ri
Ci= τi/Ri
Ri (°C/W) τi (sec)
0.693 0.001222
0.621 0.005254
0.307 0.038140
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
R
1
R
1
R
2
R
2
τ
C
τ
C
Ci= τi/Ri
Ci= τi/Ri
Ri (°C/W) τi (sec)
0.2568 0.000311
0.3429 0.006347
IRGS/SL/B/P4640D/EPbF
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Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT-TO-220Pak)
Fig. 28 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE-TO-220Pak)
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z
thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
R
1
R
1
R
2
R
2
τ
C
τ
C
Ci= τi/Ri
Ci= τi/Ri
Ri (°C/W) τi (sec)
0.2329 0.000234
0.3631 0.007009
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
Thermal Response ( Z
thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
C
τ
C
Ci= τi/Ri
Ci= τi/Ri
Ri (°C/W) τi (sec)
0.476 0.000763
0.647 0.003028
0.406 0.023686
IRGS/SL/B/P4640D/EPbF
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Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit
0
1K
VCC
DUT
L
L
Rg
80 V
DUT VCC
+
-
DC
4X
DUT
VCC
R
SH
L
Rg
VCC
DUT /
DRIVER
diode clamp /
DUT
-5V
Rg
VCC
DUT
R = VCC
ICM
G force
C sense
100K
DUT
0.0075µF
D1 22K
E force
C force
E sense
IRGS/SL/B/P4640D/EPbF
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Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 175°C using Fig. CT.4
-100
0
100
200
300
400
500
600
-0.40 0.10 0.60
Time(µs)
V
CE
(V)
-5
0
5
10
15
20
25
30
E
OFF
Loss
5% VCE
5% ICE
90% ICE
t
f
VCE
CURREN
ICE
CURREN
-100
0
100
200
300
400
500
600
11.70 11.90 12.10 12.30
Time (µs)
V
CE
(V)
-10
0
10
20
30
40
50
60
E
ON
I
CE
CURREN
90% test
10% I
CE
5% V
CE
tr
V
CE
CURR
-50
-40
-30
-20
-10
0
10
20
30
-0.15 -0.05 0.05 0.15 0.25
time (µS)
I
RR
(A)
Peak
I
RR
Q
RR
t
RR
10%
Peak
I
RR
-100
0
100
200
300
400
500
600
-5.00 0.00 5.00 10.00
time (µS)
V
CE
(V)
-50
0
50
100
150
200
250
300
I
CE
(A)
V
CE
I
CE
IRGS/SL/B/P4640D/EPbF
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D2-PAK (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2-Pak (TO-263AB) Part Marking Information
DATE CODE
YEAR 0 = 2000
WEEK 02
A = ASSEMBLY SITE CODE
RECTIFIER
INTERNATIONAL PART NUMBER
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
F530S
IN THE ASSEMBLY LINE "L"
ASSEMBLED ON WW 02, 2000
THIS IS AN IRF530S WITH
LOT CODE 8024 INTERNATIONAL
LOGO
RECTIFIER
LOT CODE
ASSEMBLY YEAR 0 = 2000
PART NUMBER
DATE CODE
LINE L
WEEK 02
OR
F530S
LOGO
ASSEMBLY
LOT CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IRGS/SL/B/P4640D/EPbF
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LOT CODE 1789
EXAM PLE: TH IS IS AN IRF1010
N o te : "P " in a s s e m b ly lin e p o s itio n
indicates "Lead - Free"
IN TH E ASSEM BLY LIN E "C"
ASSEM BLED O N W W 19, 2000
IN T E R N A T IO N A L PART NUM BER
R E C T IF IE R
LO T C O D E
ASSEM BLY
LO G O
YEAR 0 = 2000
DATE CODE
WEEK 19
LIN E C
TO-220AB package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-220AB Part Marking Information
TO-220AB Package Outline
(Dimensions are shown in millimeters (inches))
IRGS/SL/B/P4640D/EPbF
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TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
LOGO
RECTIFIER
INTERNATIONAL
LOT CODE
ASSEMBLY
LOGO
RECTIFIER
INTERNATIONAL
DATE CODE
WEEK 19
YEAR 7 = 1997
PART NUMBER
A = ASSEMBLY SITE CODE
OR
PRODUCT (OPTIONAL)
P = DESIGNATES LEAD- FREE
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
ASSEMBLY
PART NUMBER
DATE CODE
WEEK 1 9
LINE C
LOT CODE
YEAR 7 = 1997
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
IRGS/SL/B/P4640D/EPbF
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TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AC package is not recommended for Surface Mount Application.
YEAR 1 = 2001
DATE CODE
PART NUMBER
INTERNATIONAL
LOGO
RECTIFIER
ASSEMBLY
56 57
IRFPE30
135H
LINE H
indicates "Lead-Free" WEEK 35
LOT CODE
IN THE ASSEMBLY LINE "H"
ASSEMBLED ON WW 35, 2001
Notes: This part marking information applies to devices produced after 02/26/2001
Note: "P" in assembly line position
EXAMPLE:
WITH ASSEMBLY
THIS IS AN IRFPE30
LOT CODE 5657
IRGS/SL/B/P4640D/EPbF
16 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 20, 2015
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AD package is not recommended for Surface Mount Application.
ASSEM BLY YEAR 0 = 2000
ASSEM BLED O N W W 35, 2000
IN THE ASSEM BLY LINE "H"
EXAM PLE: THIS IS AN IRGP30B120KD-E
LOT CO DE 5657
WITH ASSEMBLY PART NUMBER
DATE CODE
IN T E R N A T IO N A L
RECTIFIER
LO G O
035H
5 6 57
WEEK 35
LINE H
LOT CODE
N o te : "P " in a s s e m b ly lin e p o s itio n
indicates "Lead-Free"
IRGS/SL/B/P4640D/EPbF
17 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 20, 2015
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
D2Pak Tape & Reel Information
(Dimensions are shown in millimeters (inches))
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IRGS/SL/B/P4640D/EPbF
18 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 20, 2015
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
Qualification Information†
Qualification Level Industrial
(per JEDEC JESD47F) ††
Moisture Sensitivity Level D2Pak MSL1
TO-220AB N/A
TO-247AC N/A
TO-247AD N/A
RoHS Compliant Yes
TO-262 N/A
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
