MJ11032, 11033
Darlington Power Transistors
Page 1 31/05/05 V1.0
Complementary Silicon Power Darlington Transistors are designed for use as
output devices in complementary general purpose amplifier applications.
Features:
••High Gain Darlington performance.
••High DC Current Gain: hFE = 1000 (Minimum) at IC= 25A,
hFE = 400 (Minimum) at IC= 50A.
••Monolithic construction with built-in Base-Emitter Shunt Resistor.
Pin 1. Base
2. Emitter
Collector(Case)
Dimensions Minimum Maximum
A 38.75 39.96
B 19.28 22.23
C 7.96 9.28
D 11.18 12.19
E 25.20 26.67
F 0.92 1.09
G 1.38 1.62
H 29.90 30.40
I 16.64 17.30
J 3.88 4.36
K 10.67 11.18
Dimensions : Millimetres
Maximum Ratings
Characteristic Symbol Rating Unit
Collector-Emitter Voltage VCEO 120
VCollector-Base Voltage VCBO
Emitter-Base Voltage VEBO 5.0
Collector Current-Continuous
-Peak
IC
ICM
50
100 A
Base Current IB2.0
Total Power Dissipation at TC= 25°C
Derate above 25°C PD
300
1.71
W
W/°C
Operating and Storage Junction Temperature Range TJ, TSTG -65 to +200 °C
NPN PNP
MJ11032 MJ11033
TO-3
50 Ampere
Complementary
Silicon Power
Darlington Transistors
120 Volts
300 Watts
MJ11032, 11033
Darlington Power Transistors
Page 2 31/05/05 V1.0
Thermal Characteristics
Characteristic Symbol Maximum Unit
Thermal Resistance Junction to Case Rθjc 0.584 °C/W
Figure - 1 Power Derating
TC, Temperature (°C)
PD, Power Dissipation (Watts)
Electrical Characteristics (TC= 25°C unless otherwise noted)
Characteristic Symbol Minimum Maximum Unit
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
(IC = 100mA, IB= 0) VCEO(sus) 120 - V
Collector Cut off Current
(VCE = 50V, IB= 0) ICEO - 2.0
mA
Collector-Emitter Leakage Current
(VCE = 120V, RBE = 1kΩ)
(VCE = 120V, RBE = 1kΩ, TC= 125°C)
ICER -2.0
10
Emitter Cut off Current
(VEB = 5.0V, IC = 0) IEBO - 5.0
ON Characteristics (1)
DC Current Gain
(IC= 25A, VCE = 5.0V)
(IC= 50A, VCE = 5.0V)
hFE 1000
400
18,000 -
Collector-Emitter Saturation Voltage
(IC= 25A, IB= 250mA)
(IC= 50A, IB= 500mA)
VCE(sat) - 2.5
3.5
V
Base-Emitter Saturation Voltage
(IC= 25A, IB= 200mA)
(IC= 50A, IB= 300mA)
VBE(sat) - 3.0
4.5
MJ11032, 11033
Darlington Power Transistors
Page 3 31/05/05 V1.0
Characteristic Symbol Minimum Maximum Unit
Dynamic Characterisitics
Small-Signal Current Gain
(IC= 10A, VCE = 3.0V, f = 1.0MHz) |hfe|4.0 - -
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%.
(2) fT=hfe• ftest
hFE, DC Current Gain
hFE, DC Current Gain
IC, Collector Current (AMP) IC, Collector Current (AMP)
DC Current Gain DC Current Gain
Internal Schematic Diagram
PNP
MJ11033
NPN
MJ11032
Electrical Characteristics (TC= 25°C unless otherwise noted)
MJ11032, 11033
Darlington Power Transistors
Page 4 31/05/05 V1.0
Active-Region Safe Operating Area (SOA)
VCE, Collector Emitter Voltage (Volts)
IC, Collector Current (AMP)
Specifications
There are two limitations on the power handling ability of a
transistor average junction temperature and second breakdown
safe operating area curves indicate IC-VCE limits of the transistor
that must be observed for reliable operation i.e, the transistor
must not be subjected to greater dissipation than the curves
indicate.
The data of SOA curve is based on TJ(PK) = 200°C; TCis variable
depending on conditions. Second breakdown pulse limits are
valid for duty cycles to 10% provided TJ(PK) ≤200°C, At high case
temperatures, thermal limitation will reduce the power that can be
handled to values less than the limitations imposed by second
breakdown.
IC(av)
maximum
(A)
VCEO
maximum
(V)
hFE
minimum
at IC = 25A
Ptot
at 25°C
(W)
Package Type Part Number
50 120 1000 300 TO-3
NPN MJ11032
PNP MJ11033
“ON” Voltages
IC, Collector Current (AMP)
V, Voltage Volts
“ON” Voltages
IC, Collector Current (AMP)
V, Voltage Volts
For enquiries from all other markets
MJ11032, 11033
Darlington Power Transistors
Page 5 31/05/05 V1.0
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