SEMICONDUCTOR TIP32CF TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES P G B E ) SYMBOL RATING UNIT Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V DC IC -3 Pulse ICP -5 IB -1 A 2 W 25 W L R M D D N N H M N P Q R S 0.5 Typ G H J K L A Base Current Collector Power Ta=25 Dissipation Tc=25 Junction Temperature Storage Temperature Range 2 3 1. BASE 2. COLLECTOR 3. EMITTER PC TO-220IS Tj 150 Tstg -55 150 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC 1 Q Collector Current L J CHARACTERISTIC K MAXIMUM RATING (Ta=25 MILLIMETERS _ 0.3 10.0 + _ 0.3 15.0 + _ 0.3 2.70 + 0.76+0.09/-0.05 _ 0.2 3.2 + _ 0.3 3.0 + _ 0.3 12.0 + 0.5+0.1/-0.05 _ 0.5 13.6 + _ 0.2 3.7 + 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 0.1 2.54 + _ 0.1 6.8 + _ 0.2 4.5 + _ 0.2 2.6 + DIM A B C D E F F S Complementary to TIP31CF. ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCEO(SUS) IC=-30mA, IB=0 -100 - - V Collector Cut-off Current ICEO VCE=-60V, IB=0 - - -0.3 mA Collector Cut-off Current ICES VCE=-100V, VEB=0 - - -200 A Emitter Cut-off Current IEBO VBE=-5V, IC=0 - - -1 mA VCE=-4V, IC=-1A 25 - - DC Current Gain hFE VCE=-4V, IC=-3A 10 - 50 Collector Emitter Sustaining Voltage Collector-Emitter Saturation Voltage VCE(sat) IC=-3A, IB=-375mA - - -1.2 V Base-Emitter On Voltage VBE(on) VCE=-4V, IC=-3A - - -1.8 V 3.0 - - MHz fT Transition Frequency 2007. 5. 21 Revision No : 0 VCE=-10V, IC=-500mA f=1MHz 1/2 TIP32CF V CE(sat) ,VBE(sat) - I C 1k 500 300 VCE =-4V SATURATION VOLTAGE V CE(sat) ,VBE(sat) (mV) DC CURRENT GAIN hFE h FE - I C 100 50 30 10 5 3 -1k -500 -300 VBE(sat) -100 -50 -30 VCE(sat) -10 -3 -10 -30 -100 -300 -1k -3k -10k -1 -3 -10 -30 -3k -10k -1k -300 -100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) P C - Ta SAFE OPERATING AREA -10 5 DC -1 s 0 10 s 15 I C MAX. (CONTIN -UOUS) -3 s 20 I C MAX.(PULSE) * -5 10 25 5m COLLECTOR CURRENT I C (A) 30 * * * OP ER AT -0.5 * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -0.3 IN G -0.1 0 0 50 100 150 AMBIENT TEMPERATURE Ta ( C) 2007. 5. 21 I C /I B =10 1m COLLECTOR POWER DISSIPATION P C (W) 1 -1 -10k -5k -3k Revision No : 0 200 -4 -10 -30 -50 -100 -200 COLLECTOR-EMITTER VOLTAGE V CE (V) 2/2