BF198 NPN Silicon Planar Transistor designed for RF applications; low feedback capacitance, especially suited for AGC in emitter-grounded IF stages in TV sets. Absolute Maximum Ratings t PLES oO : 4 ; [4 sf Pa c } is 3 + | E he he max.05 125 Plastic case ~ JEDEC TO-92 TO-18 compatible The case is impervious to light Weight approximately 0.18 g Dimensions in mm Symbol Value Unit Collector Base Voltage Voeso 40 V Collector Emitter Voltage VcEo 30 V Emitter Base Voltage Veo 4 V Collector Current Io 25 mA Base Current lp 3 mA Power Dissipation at Tamp = 25C Prot 300) mw Junction Temperature T; 150 C Storage Temperature Range Ts 55...+150 C 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case 84BF198 Characteristics at Tam, = 25C Symbol Min. Typ. Max. Unit DC Current Gain at Vcc = 10 V, lo =4 mA hee 27 80 - - Base Emitter Voltage at Vog = 10 V, Ib = 4mA Vee - 750 _ mV Collector Cutoff Current at Vog = 40 V IcBo - - 100 nA Thermal Resistance Junction to Ambient Riha - ~ 420") K/W Feedback Capacitance Cre - 0.22 - pF at Veg = 10 V, Ilo = 1 mA, f = 1 MHz Gain Bandwidth Product fr _ 400 _ MHz at Veg = 10 V, Ilo = 4mA, f = 100 MHz Noise Figure F - 3 - dB at Vcg = 10 V, Ip = 4 mA, f = 35 MHz, Re = 1009 y-Parameters (emitter grounded) at f = 35 MHz, Vcg = 10 V, Ic = 4 mA Input Admittance Gie - 4.5 - mS Output Admittance Doe _- 35 - BS Input Capacitance Cie = 40 - pF Output Capacitance Coe - 1.3 - pF Forward Transconductance | te | = 105 -_ mS Pie - -20 - Reverse Transconductance | Yre | - 45 - LS Pre - 95 ~ Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case 85BF198 Admissible power dissipation versus ambient temperature Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case Forward transconductance versus emitter current mW BF 198 mS BF 198 500 200 Vem = 10V -t f = 35 MHz Tomb = 25C 400 Y, Foot | el 300 \ 7 \ \ 100 / 200 \ / \ K 100 Ny <a \ 0 N 0 0 100 200C 0 10 20mA = Tamb _ -le Collector current Gain bandwidth product versus base current versus emitter current mA BF 198 MH2 BF 198 25 1 500 TTI Voe=10V Veg=10 Vv Tomb = 25C a ~ Tamb= 25 C 4 I, 20 7 fy 400 L HK 15 / 300 \ 10 L 200 \ | \ 5 | 100 NS hm 0 0 0 1 2 3 4 5 mA 0 5 10 15 mA 86