1. Power semiconductor devices, general use
2. Rectifier diodes
Parameter
Thermal resistance
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
Thermal resistance (junction to fin)
Thermal resistance (case to fin)
(Contact thermal resistance)
Transient thermal impedance
Transient thermal impedance
(junction to ambient)
Transient thermal impedance
(junction to case)
Transient thermal impedance
(junction to fin)
Ambient temperature
Fin temperature
Case temperature
Junction temperature rating
Storage temperature rating
Mounting torque rating
Mounting force required rating
Definition/description
Defined when junction power dissipation results in a balanced state of thermal flow. Specifies the
degree of temperature rise per unit of power, measuring junction temperature from a specified
external point.
The thermal resistance between the junction and ambient atmosphere.
The thermal resistance between the junction and surface of the case.
The thermal resistance between the junction and the fin.
The thermal resistance between the surface of the case and the fin.
Defined when case temperature (stud temperature) is constant, and power dissipation at the junction
is pulsating. Specifies the degree of temperature rise per unit of power, measuring junction
temperature from a specified external point.
The transient thermal impedance between the junction and ambient atmosphere.
The transient thermal impedance between the junction and surface of the case.
The transient thermal impedance between the junction and the fin.
When used in the natural cooling or forced-air cooling, it is the temperature of the surrounding
atmosphere of a device which is dependent on geographical location and season, and is not
influenced by heat dissipation of the device.
The temperature at a specified point of the device heatsink.
The temperature at a specified point of the device case.
The device junction temperature rating. Indicates the maximum and minimum allowable operation
temperatures.
The device storage temperature (with no electrical connection). Indicates the maximum and
minimum allowable temperatures.
The maximum allowable torque specification for mounting the heatsink to the stud type device.
The maximum allowable pressure applicable when mounting the heatsink to the press pack type device.
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Symbol
Rth
Rth(j-a)
Rth(j-c)
Rth(j-f)
Rth(c-f)
Zth(t)
Zth(j-a)
Zth(j-c)
Zth(j-f)
Ta
Tf
Tc
Tj
Tstg
—
—
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse
voltage
DC reverse voltage
Forward voltage
RMS forward current
Average forward current
Surge forward current
Current-squared, time integration
Repetitive peak reverse current
Symbol
VRRM
VRSM
VR(DC)
VFM
IF(RMS)
IF(AV)
IFSM
I2t
IRRM
Definition/description
Within the rated junction temperature range, specifies the repetitive peak reverse voltage applicable
for each cycle. Includes the maximum instantaneous value for repetitive transient reverse voltage,
but excludes non-repetitive transient reverse voltage.
Within the rated junction temperature range, specifies the non-repetitive peak reverse voltage
applicable for a time width equivalent to less than a half of a sine wave at commercial frequency.
Indicates the maximum instantaneous value for non-repetitive transient reverse voltage.
The maximum value for DC voltage applicable in the reverse direction, specified within the rated
junction temperature range.
At specified case (or point) temperature, and when forward current (commercial frequency, sine
wave of specified amplitude) is applied to the device, indicates the peak-value for the resulting
voltage drop.
At specified case (or point) temperature, indicates the RMS value for forward current that can be
continuously applied to the device.
At specified case (or point) temperature, and with the device connected to a resistive or inductive
load, indicates the average value for forward current (sine half wave, commercial frequency) that
can be continuously applied to the device.
Within the rated junction temperature range, indicates the peak value for non-repetitive forward
current (sine half wave, commercial frequency), this value is defined at one cycle or the function of
cycles.
Indicates peak value for surge forward current rating as the square of a half of a current since wave,
time integrated over a half of a cycle.
At maximum rated junction temperature, indicates the peak-value for repetitive current flow when a
voltage (sine half wave commercial frequency, and having a peak-value as specified for repetitive
peak reverse voltage) is applied in a reverse direction to the device.
π
ω
I2t = ∫0IFSM2 sin2 ωt dt
Aug.1998
MITSUBISHI HIGH POWER SEMICONDUCTORS
SYMBOLOGY
Aug.1998
I2t = ∫0ITSM2 sin2 ωt dt
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse
voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state
voltage
DC off-state voltage
Critical rate of rise of off-state
voltage
On-state voltage
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state
current
Current-squared, time integration
Overload on-state current
Critical rate-of-rise of on-state
current
Holding current
Latching current
Symbol
VRRM
VRSM
VR(DC)
VDRM
VDSM
VD(DC)
dv/dt
VTM
IT(RMS)
IT(AV)
ITSM
I2t
ITM(OV)
diT/dt
IH
IL
Definition/description
Within the rated junction temperature range, and when there is no signal between the gate and
cathode, specifies the repetitive peak reverse voltage applicable on each cycle.
Within the rated junction temperature range, and when there is no signal between the gate and
cathode, specifies the non-repetitive peak reverse voltage applicable for time width equivalent to
less than a half of a sine wave at commercial frequency.
Within the rated junction temperature range, and when there is specified reverse bias conditions
between the gate and cathode, specifies the maximum value for DC voltage applicable in reverse
direction.
Within the rated junction temperature range, and when there is specified reverse bias conditions
between the gate and cathode, specifies the repetitive peak off-state voltage applicable for each
cycle. Includes the maximum instantaneous value for repetitive transient off-state voltage.
Within the rated junction temperature range, and when there is specified reverse bias conditions
between the gate and cathode, specifies the non-repetitive peak off-state voltage applicable for time
width equivalent to less than a half of a sine wave at commercial frequency. Indicates the maximum
instantaneous value for non-repetitive transient off-state voltage.
Within the rated junction temperature range, and when there is specified reverse bias conditions
between the gate and cathode, specifies the maximum value for DC voltage applicable in forward
direction.
At maximum rated junction temperature, and when there is specified reverse bias conditions
between the gate and cathode, specifies the maximum rate-of-rise of off-state voltage that will not
cause the device change from an off-state to an on-state when an exponential function waveform
off-state voltage of specified amplitude is applied to the device,
Here, VD: Specified off-state voltage
τ: Time constant for the exponential function waveform
At specified case (or point) temperature, and when on-state current (commercial frequency, half
sine wave of specified amplitude) is applied to the device, indicates peak value for the resulting
voltage drop.
At specified case (or point) temperature, indicates the RMS value for on-state current that can be
continuously applied to the device.
At specified case (or point) temperature, and with the device connected to a resistive or inductive
load, indicates the average value for forward current (sine half wave, commercial frequency) that
can be continuously applied to the device.
Within the rated junction temperature range, indicates the peak value for non-repetitive on-state
current (sine half wave, commercial frequency). This value is defined at one cycle, or as a function
of multiple cycles.
Indicates peak value for surge-on current as the square of a half of a current sine wave, time
integrated over a half of a cycle.
Tested under specified cooling conditions, and after the device is continuously conducting an on-
state current of specified value, but less than that of the average on-state current rating. The value
indicated is the average overload on-state current (commercial frequency, sine half wave)
conducted for a specified time immediately after attaining the above conditions, when the test
current is removed, and the device is allowed to regain thermal balance, with rated operating
voltage applied, it should again conducted the overload current.
At specified case (or point) temperature, specified off-state voltage, specified gate conditions, and at
a frequency of less than 60Hz, indicates the maximum rate-of-rise of on-state current which the
thyristor will withstand after switching from an off-state to an on-state.
At specified junction temperature, gate conditions and off-state voltage, indicates the minimum
anode current required to hold the thyristor in an on-state.
At specified junction temperature, off-state voltage and gate conditions, and when the gate trigger
current is lifted immediately following switching from an off-to on-state, indicates the minimum
anode current required to hold the thyristor in an on-state.
Parameter
Reverse recovery charge
Symbol
QRR
Definition/description
Indicates the total amount of reverse recovery charge due to current integrated time in a reverse
direction ( as part of the internally stored charge). Specified at a certain junction temperature, and
current which has decreased at a specified rate of decrease, from the forward state to reverse after
a certain forward current are applied.
3. Gate turn-off thyristors
dv
dt =0.632VD
τ
π
ω
MITSUBISHI HIGH POWER SEMICONDUCTORS
SYMBOLOGY
Aug.1998
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
Peak forward gate power
dissipation
Average forward gate power
dissipation
Peak forward gate current
Peak gate reverse current
Peak forward gate voltage
Peak reverse gate voltage
Gate trigger current
Gate trigger voltage
Gate non-trigger voltage
On-state power dissipation
Peak reverse gate power
dissipation
Average reverse gate power
dissipation
Reverse gate current
Repetitive controllable on-state
current
Peak gate turn-off current
Turn-on time
Turn-off time
Gate turn-off charge
Turn-off gain
Turn on switching energy
Turn off switching energy
Average reverse current
RMS reverse current
Surge reverse current
Definition/description
At maximum rated junction temperature, indicates the peak value for reverse current flow when a
voltage (sine half wave, commercial frequency, and with a peak value as specified for repetitive
peak reverse voltage rating) is applied in a reverse direction to the device.
At maximum rated junction temperature, indicates the peak value for off-state current flow when a
voltage (sine half wave, commercial frequency, and with a peak value as specified for repetitive
peak off-state voltage rating) is applied in a forward direction to the device, at specified reverse bias
conditions between the gate and cathode.
Within the rated junction temperature range, indicates the peak-value for maximum allowable power
dissipation over a specified time period, when the device is forward-conducting between the gate
and cathode.
Within the rated junction temperature range, indicates the peak-value for maximum allowable power
dissipation when the device is forward-conducting between the gate and cathode.
Within the rated junction temperature range, indicates the peak-value for forward-current flow
between the gate and cathode.
At maximum rated junction temperature, indicates the peak-value for reverse gate current when the
specified voltage is applied in a reverse direction between the gate and cathode.
Within the rated junction temperature range, indicates the peak-value for forward-voltage applied
between the gate and cathode.
Within the rated junction temperature range, indicates the peak-value for reverse-voltage applied
between the gate and cathode.
At a junction temperature of 25°C, and with an off-voltage of 6V, and a specified load resistance,
indicates the minimum gate DC current required to switch the thyristor from an off-state to an on-
state. For small power devices, does not include current flow through the connected gate resistor.
At a junction temperature of 25°C, and with an off-voltage of 6V, and a specified load resistance,
indicates the minimum gate DC voltage required to switch the thyristor from an off-state to an on-
state.
At maximum rated junction temperature, and with a specified off-state voltage applied to the device,
indicates the maximum gate DC voltage which will not switch the device from an off-state to an on-
state.
At a specified conducting angle, and with on-current of specified waveform applied to the device,
indicates the average value for internal power dissipation occurring over a one-cycle interval.
Within the rated junction temperature range, indicates the peak-value for maximum allowable power
dissipation in the reverse direction between the gate and cathode, over a specified time period.
Within the rated junction temperature range, indicates the average value for maximum allowable
power dissipation in the reverse direction between the gate and cathode.
Within the rated junction temperature range, indicates peak-value for reverse-current that can be
conducted between the gate and cathode.
Under specified conditions, indicates the instantaneous value for on-current usable in gate control,
specified immediately prior to device turn-off.
Indicates the maximum instantaneous gate reverse-current required to switch the device from an
on-state to an off-state.
When applying forward-current to the gate, indicates the time required to switch the thyristor from an
off-state to an on-state.
When applying reverse-current to the gate, indicates the time required to switch the thyristor from an
on-state to an off-state.
The charge of turn off gate current calculated as an integrated time value from the initiation up the
peak value of gate current.
The ratio of controllable on stete current to gate reverse-current required for gate turn-off.
Indicates the integration of multiplying anode current by anode voltage during the turn on period.
Indicates the integration of multiplying anode current by anode voltage during the turn off period (tail
time included).
At a specified case (or point) temperature, and connected to a resistive or inductive load, indicales
the average value for reverse-current (commercial frequency, sine half wave), Note that no on-state
current is allowed.
At specified case (or point) temperature, indicates the rms value for reverse-current that the device
can continuously conduct. Note that no on-state current is allowed.
Within the rated junction temperature range, indicates the peak-value for a non-repetitive reverse-
current (commercial frequency, half sine wave) . This value indicated for one cycle, or as a function
of a number of cycles. Note that no on-state current is allowed.
Symbol
IRRM
IDRM
PFGM
PFG (AV)
IFGM
IRGM
VFGM
VRGM
IGT
VGT
VGD
PT
PRGM
PRG
IRG
ITQRM
IGQM
tgt
tgq
QGQ
Goff
Eon
Eoff
IR (AV)
IR (rms)
IRSM
Gate turn-off thyristors
MITSUBISHI HIGH POWER SEMICONDUCTORS
SYMBOLOGY
Aug.1998
Gate turn-off thyristors (continued)
IR2t
Rthj-f (diode)
VRM
Qdr
rdr
Edr
Indicates peak-value for reverse current rating as the square of a half of a current sine wave, time
integrated over a-half of a current sine wave, time integrated over a half of a cycle. Note that no on-
state current is allowed.
The thermal resistance between the junction and fin of diode part.
At specified case (or point) temperature, and when reverse current (commercial frequency, half sine
wave of specified peak value) is applied to the device, indicates peak value for the resulting voltage
drop for RC-GTO.
At maximum rated junction temperature, and conducting a specified reverse-current, indicated as the
integrated time value of off-state recovery current foow in the positive direction at the time the device
is forced into an off-state by the reverse-current decreaseing at specified rate-of-fall of reverse current.
At maximum rated junction temperature, and conducting the specified reverse-current, indicates
following time.
At maximum rated junction temperature, and conducting the specified reverse-current, indicates the
integration of multiplying off-state current by off state voltage at the time the device is forced into an
off-state.
Symbol Parameter Definition/description
Reverse current-squared, time
integration
Thermal resistance
Reverse voltage
Off state recovery charge
Off state recovery time
Off state recoverry energy
π
ω
IR2t = ∫0 IRSM2 sin2 ωt dt
tdr
specified reverse-current
90%
50%
t