inters;| Data Sheet 274A, 600V, UFS Series N-Channel IGBTs The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25C and 150C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49171. Ordering Information PART NUMBER PACKAGE BRAND HGTP12N60B3 TO-220AB G12N60B3 HGT1S12N60B3S TO-263AB G12N60B3 NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g., HGT1S12N60B3S9A. Symbol HGTP12N60B3, HGT1S12N60B3S January 2000 File Number 4410.2 Features * 274A, 600V, Tc = 25C * 600V Switching SOA Capability * Typical Fall Time................ 112ns at Ty = 150C * Short Circuit Rating * Low Conduction Loss Related Literature - TB334 Guidelines for Soldering Surface Mount Components to PC Boards Packaging JEDEC TO-220AB COLLECTOR (FLANGE) JEDEC TO-263AB COLLECTOR < (FLANGE) G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 4-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 2000HGTP12N60B3, HGT1S12N60B3S Absolute Maximum Ratings T = 25C, Unless Otherwise Specitied HGTP12N60B3, HGT1S12N60B3S UNITS Collector to Emitter Voliage 0.6... eee BVcEsS 600 Vv Collector Current Continuous. ... 0.0... tees lo25 27 A AtTC = 110C nnn eee een nena lc110 12 A Collector Current Pulsed (Note 1)... 0... eee lom 110 A Gate to Emitter Voltage Continuous... 2... eee VGES +20 Vv Gate to Emitter Voltage Pulsed ....... 0... 00s VGEM +30 Vv Switching Safe Operating Area at Ty = 150C (Figure 2) ...................008. SSOA 96A at 600V Maximum Power Dissipation ......0..0.00 0000 eee Pp 104 WwW Linear Derating Factor... 0... eee 0.83 w/c Reverse Voltage Avalanche Energy.........0..00 0000 cece eee Earv 100 mJ Operating and Storage Junction Temperature Range.....................00. Ty, Tsta -55 to 150 C Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s............... 00.00.0002 TL 300 C Package Body for 10s, see Tech Brief 334.............. 0.0.0... eee eee Tokg 260 C Short Circuit Withstand Time (Note 2) at V@p=12V......0000.0..0.. 00. eee tsc 5 ys Short Circuit Withstand Time (Note 2) atVq@e=10V.......00.....00. 000. ee. tsc 10 ys CAUTION: Siresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VoE(Pk) = 360V, Ty = 125C, Rg = 252. Electrical Specifications Tc. = 25C, Unless Otherwise Specitied PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVcEs Ic = 250A, Vag = OV 600 - - Vv Emitter to Collector Breakdown Voltage BVecs Io = 10mA, Ver = OV 20 28 - v Collector to Emitter Leakage Current IcES Vce = BYces To = 25C - - 250 pA To = 150C - - 2.0 mA Collector to Emitter Saturation Voltage VCE(SAT) Io =Ior110: To = 25C - 1.6 2.1 VoeE = 15V 0 Te = 150C - 1.7 2.5 Gate to Emitter Threshold Voltage VGE(TH) Ic = 250A, VceE = Vee 4.5 49 6.0 Gate to Emitter Leakage Current IGEs Vag = +20V - - +250 nA Switching SOA SSOA Ty = 150C, Re = 258, Veg = 15V 96 - - A L= 100uH, VcE = 600V Gate to Emitter Plateau Voltage VGEP Ico =Io110: Voce = 9.5 BVcES - 7.3 - v On-State Gate Charge Qg(on) Io =Ice110: Vee = 15V - 51 60 nG Voce = 0.5 BV, CE CES | Vp = 20V - 68 78 nc Current Turn-On Delay Time ta(ON)! IGBT and Diode at Ty = 25C - 26 - ns a IcE='c110 Current Rise Time tr Vcr = 0.8 BVcES - 23 - ns Current Turn-Off Delay Time td(OFF)I Vae = 15V - 150 - ns Rg = 252 Current Fall Time te L=1mH - 62 - ns Turn-On Energy (Note 4) Eon Test Circuit (Figure 17) - 150 - iJ Turn-On Energy (Note 4) Eon2 - 304 350 iJ Turn-Off Energy (Note 3) Eorr - 250 350 pd 2 intersilHGTP12N60B3, HGT1S12N60B3S Electrical Specifications = T. = 25C, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Current Turn-On Delay Time ta(ON)| IGBT and Diode at Ty = 150C - 22 - ns a IcE='c110 Current Rise Time tr Vor = 0.8 BVcES - 23 - ns Current Turn-Off Delay Time td(OFF)| VaeE = 15V - 280 295 ns Rg = 252 Current Fall Time te L=1mH - 112 175 ns Turn-On Energy (Note 4) Eon Test Circuit (Figure 17) - 165 - iJ Turn-On Energy (Note 4) Eone2 - 500 525 pd Turn-Off Energy (Note 3) Eorr - 660 800 iJ Thermal Resistance Junction To Case Rec - - 1.2 c/w NOTES: 3. Turn-Off Energy Loss (Egfr) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (Ice = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. Egnz is the turn-on loss of the IGBT only. Egne is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same Ty as the IGBT. The diode type is specified in Figure 17. Typical Performance CurveS unless Otherwise Specified 30 =< ~ Voge = 15V 5 x TT} Ty = 150C, Rg = 250, Veg = 15V, L = 100uH b 25 p ra , . Pa Wi 2 ir 3 5 20 Hf t E = FE 15 wi 9 w Ee a 10 oc 8 N e 8 \ uy g 8 0 8 25 50 75 100 125 150 ~ 0 100 200 300 400 500 600 700 Tc, CASE TEMPERATURE (C) Voce, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA TEMPERATURE 3 intersilHGTP12N60B3, HGT1S12N60B3S Typical Performance Curves unless Otherwise Specified (Continued) 300 sg Ty = 150C, Rg = 250, L = 1mH, Vog = 480V ! V = GE >> 100 | | 75C 15V o 0; 9 S, 75C 10V i 4 110C 15V 3 SPSS PNG 110C tov e SON o x = 10h SS) A o E fMax1 = 9.05 / (ta(orFyI + ta(onyD) SN Ww C fmax2 = (Pp - Pc) / (Eon2 + Eorr) N \ O [| Pg = CONDUCTION DISSIPATION VA \ = | (DUTY FACTOR = 50%) \_ \ = RgyJc = 1.2C/W, SEE NOTES \\ \ - 1 1 1 1 1 1 1 1 2 3 10 20 30 Ice, COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 70 60 50 Tc = 150C 40 950 30 To = 25C 20 DUTY CYCLE <0.5%, Vgg = 10V 40 PULSE DURATION = 250s Ice, COLLECTOR TO EMITTER CURRENT (A) o o 2 4 6 8 10 Voce, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 3.0 T T Rg = 252, L = 1MH, VceE = 480V | | S mp 25 | | 8 Ty = 25C, Ty = 150C, Vg = 10V SY a \ \ A > 2.0 o \ LN ao y | Z 15 z 1.0 1] | P _| Q 0.5 . Leen 3 | Ww Ty = 25C, Ty = 150C, Vee = 15V 5 10 15 20 25 30 Ice, COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 2 16 t t t 100 = Ww VcE = 360V, Rg = 259, Ty = 125C EE = A. = 14 A 90 Ww a 9 \ y Isc x = 12 80 0 i \ 5 E 10 70 0 = k Oo z 8 60 E o 6 i 50 O A S tsc = =< 24 ~ 40 4 a a J = 3 a H 2 30 ~ 10 11 12 13 14 15 Vge; GATE TO EMITTER VOLTAGE (V) FIGURE 4. SHORT CIRCUIT WITHSTAND TIME 180 Duty CYCLE <0.5%, VgE=15V To =-55C 160 | PULSE DURATION = 250s 140 120 100 80 60 40 20 Ice, COLLECTOR TO EMITTER CURRENT (A) 0 2 4 6 8 10 Voce, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 2.5 Rg = 250, L=1mH, Voce = 480V 2.0 ZO 7 15 ZO) Ty = 150C; Vgg = 10V OR 15V a 1.0 a 0.5 | Lee] Ty = 25C; Ve = 10V OR 15V ae | | 5 10 15 20 25 30 Ice, COLLECTOR TO EMITTER CURRENT (A) Eorr; TURN-OFF ENERGY LOSS (mJ) FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 4 intersilHGTP12N60B3, HGT1S12N60B3S Typical Performance Curves unless Otherwise Specified (Continued) Rg = 250, L = 1mH, Voge = 480V Ty = 25C, Ty = 150C, Vge = 10V Ty = 25C, Ty = 150C, Veg = 15V ta], TURN-ON DELAY TIME (ns) 5 10 15 20 25 30 Ice, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 300 Rg = 250, L= 1mH, Voce = 480V 275 250 225 Ty = 150C, Voge = 10V, Vgg = 15V 200 Ty = 25C, Vee = 10V, Vge = 15V 175 150 125 ta(orry, TURN-OFF DELAY TIME (ns) 100 5 10 15 20 25 30 Ice, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT DUTY CYCLE <0.5%, VcE = 10V To - -55C 160 | PULSE DURATION = 250us Tc = 25C 140 120 100 80 Tc = 150C 60 40 20 Ice, COLLECTOR TO EMITTER CURRENT (A) 4 5 6 7 8 9 10 11 #12 13 #14 #15 Voge; GATE TO EMITTER VOLTAGE (V) FIGURE 13. TRANSFER CHARACTERISTIC 150 Rg = 250, L = 1mH, Vcg = 480V J Sf _ O -_ 0, - 125 | Ty = 25C, Ty = 150C, Vge = 10V yf ly z 1 | L | = 100 w A F f w 75 ~ LL * 50 aan en] 25 Leet TT) = 25C and Ty = 150C, Vgp = 15V 0 | | | 5 10 15 20 25 30 Ice, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 140 Rg = 250, L = 1mH, Voce = 480V 130 120 110 Ty = 150C, Vgg = 10V, Vgg = 15V 100 90 t, FALL TIME (ns) 80 Ty = 25C, Vge = 10V OR 15V 70 60 5 10 15 20 25 30 Ice, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT Ig (REF) = 1mA, RL = 250, Tce = 25C Vcr = 600V Vor = 400V Voce = 200V Vge, GATE TO EMITTER VOLTAGE (V) 0 5 10 15 20 25 30 35 40 45 50 Qg, GATE CHARGE (nC) FIGURE 14. GATE CHARGE WAVEFORMS 5 intersilHGTP12N60B3, HGT1S12N60B3S Typical Performance Curves unless Otherwise Specified (Continued) 2.50 2.00 1.50 1.00 C, CAPACITANCE (nF) FREQUENCY = 1MHz Coes CRES 5 10 15 20 25 Voce, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE SINGLE PULSE Zeauc, NORMALIZED THERMAL RESPONSE 10 104 FIGURE 16. NORMALIZ Test Circuit and Waveforms HGTP12N60B3D DUTY FACTOR, D = ty /to PEAK Ty = Pp X Zouc X Rogc + Te 103 1072 1071 10 10! ty, RECTANGULAR PULSE DURATION (s) ED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE 10% VGE Eonz2 L=1mH << VcE Rg = 252 a RY hy +L IcE = Vpp = 480V ty |] ta(on)l FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 18. SWITCHING TEST WAVEFORMS 6 intersilHGTP12N60B3, HGT1S12N60B3S Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handlers body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ECCOSORBD LD26 or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VgeM. Exceeding the rated Vee can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (Ice) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8,9 and 11. The operating frequency plot (Figure 3) of a typical device shows fyyax1 Or fyaxe; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fax is defined by fyax1 = 0.05/(tq(OFF)I+ td(ON)))- Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. tq(QFF)| and tg(Qn)| are defined in Figure 18. Device turn-off delay can establish an additional frequency limiting condition for an application other than Tym. ta(OFF)I is important when controlling output ripple under a lightly loaded condition. fMaxg is defined by fyaxe = (Pp - Pc) (Eorr + Eong). The allowable dissipation (Pp) is defined by Pp = (Ty - Tc)/ReJc. The sum of device switching and conduction losses must not exceed Pp. A 50% duty factor was used (Figure 3) and the conduction losses (Pc) are approximated by Po = (Vce x Ice)/2. Eone and Eorr are defined in the switching waveforms shown in Figure 18. Egonga is the integral of the instantaneous power loss (Ice X Vce) during turn-on and Eorr is the integral of the instantaneous power loss (Ice X Vce) during turn-off. All tail losses are included in the calculation for Eqrr; i-e., the collector current equals zero (Ice = 0). All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 7 intersil ECCOSORBD" is a Trademark of Emerson and Cumming, Inc.