Product Brief
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Order Number: B152-H9688-G1-X-7600-DB2012-0003
Date: 05 / 2013
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500V CoolMOS™ CE Power MOSFET
Product Portfolio CoolMOS™ CE
Simplified test circuit
RDS(on)
TO-220
FullPAK
TO-252
DPAK
TO-220 TO-247 IPAK
3000 mΩ IPD50R3k0CE IPU50R3k0CE
2000 mΩ IPD50R2k0CE IPU50R2k0CE
1400 mΩ IPD50R1k4CE IPU50R1k4CE
950 mΩ IPA50R950CE IPD50R950CE IPU50R950CE
800 mΩ IPA50R800CE IPD50R800CE
650 mΩ IPA50R650CE IPD50R650CE
500 mΩ IPA50R500CE IPD50R500CE IPP50R500CE
380 mΩ IPA50R380CE IPD50R380CE IPP50R380CE
280 mΩ IPA50R280CE IPD50R280CE IPP50R280CE IPW50R280CE
190 mΩ IPA50R190CE IPP50R190CE IPW50R190CE
Applications
Consumer Consumer, Lighting PC Silverbox PC Silverbox
SSL: Solid State Lighting
IPP50R500CE vs. Standard MOS
hard commutation on conducting body diode; half bridge configuration
High Side MOS = Low Side MOS, same RG,sum = 5Ω
IF , forward current through body diode [A]
DS, max
DS
rr
500
490
480
470
460
450
440
430
420
410
400
0 1 2 3 4 5 6
IPP50R500CE
Standard MOS
12V lower drain
source overshoot
ISD
ISD
RG,ext
RG,ext
dIF / dt
dIrr / dt
VDS max
VDS
VDS
t
t
0V
0A
400V
SW
DUT
Imm
IF
IF
145µH
simplified waveform when switching ON of High Side
MOSFET for 2nd time (double pulse)
From IF=1 to IF=4A better behaviour observed of 500V CE
IF > 4A same behaviour
Body diode conduction < 2µs before turn-o