EB52W4C30N-32.768M TR
EB52W4 C 30 N -32.768M TR
Series
3.3Vdc LVCMOS PCB SMD TCXO
Operating Temperature Range
-20°C to +70°C
Frequency Stability
±3.0ppm Maximum
Packaging Options
Tape & Reel
Nominal Frequency
32.768MHz
Control Voltage
None (No Connect on Pin 1)
ELECTRICAL SPECIFICATIONS
Nominal Frequency 32.768MHz
Frequency Stability ±3.0ppm Maximum (Inclusive of Operating Temperature Range)
Frequency Stability vs. Input Voltage ±0.3ppm Maximum (±5%)
Aging at 25°C ±1ppm/Year Maximum
Frequency Stability vs. Load ±0.2ppm Maximum (±2pF)
Operating Temperature Range -20°C to +70°C
Supply Voltage 3.3Vdc ±5%
Input Current 35mA Maximum
Output Voltage Logic High (Voh) 90% of Vdd Minimum
Output Voltage Logic Low (Vol) 10% of Vdd Maximum
Rise/Fall Time 10nSec Maximum (Measured at 20% to 80% of waveform)
Duty Cycle 50% ±10% (Measured at 50% of waveform)
Load Drive Capability 15pF Maximum
Output Logic Type CMOS
Control Voltage None (No Connect on Pin 1)
Internal Trim ±3ppm Minimum (Top of Can)
Modulation Bandwidth 10kHz Minimum (Measured at -3dB with a Control Voltage of 1.65Vdc)
Input Impedance 10kOhms Typical
Phase Noise -70dBc at 10Hz Offset, -100dBc at 100Hz Offset, -130dBc at 1kHz Offset, -140dBc at 10kHz Offset, -
145dBc at 100kHz Offset (Typical Values Fo=19.200MHz at 25°C at Nominal Vdd and Vc)
Storage Temperature Range -40°C to +85°C
ENVIRONMENTAL & MECHANICAL SPECIFICATIONS
Fine Leak Test MIL-STD-883, Method 1014 Condition A (Internal Crystal Only)
Gross Leak Test MIL-STD-883, Method 1014 Condition C (Internal Crystal Only)
Lead Integrity MIL-STD-883, Method 2004
Mechanical Shock MIL-STD-202, Method 213 Condition C
Resistance to Soldering Heat MIL-STD-202, Method 210
Resistance to Solvents MIL-STD-202, Method 215
Solderability MIL-STD-883, Method 2003
Temperature Cycling MIL-STD-883, Method 1010
Vibration MIL-STD-883, Method 2007 Condition A
www.ecliptek.com | Specification Subject to Change Without Notice | Rev A 2/19/2010 | Page 1 of 5
EB52W4C30N-32.768M TR
MECHANICAL DIMENSIONS (all dimensions in millimeters)
11.7
±0.5
1.5
±0.3 DIA 3.5 ±0.5
18.3 ±0.5
21.3 ±0.5
1.0
±0.1
3
21
4
4.0 ±0.3 1.7
±0.4
7.62
±0.30
4.5
±0.3
4.0 ±0.3
PIN CONNECTION
1 No Connect
2 Ground
3 Output
4 Supply Voltage
LINE MARKING
1ECLIPTEK
232.768M
M=MHz
3XXYZZ
XX=Ecliptek Manufacturing
Code
Y=Last Digit of the Year
ZZ=Week of the Year
All Tolerances are ±0.1
Suggested Solder Pad Layout
Solder Land
(X4)
All Dimensions in Millimeters
14.8
5.9
1.6 (X4)
3.5 (X4)
OUTPUT WAVEFORM
VOH
VOL
80% of Waveform
50% of Waveform
20% of Waveform
Fall
Time
Rise
Time TW
T
Duty Cycle (%) = TW/T x 100
CLOCK OUTPUT
www.ecliptek.com | Specification Subject to Change Without Notice | Rev A 2/19/2010 | Page 2 of 5
EB52W4C30N-32.768M TR
Supply
Voltage
(VDD)
Test Circuit for CMOS Output
Output
No Connect
or Tri-State
Ground
+ +
+_
__
Power
Supply 0.01µF
(Note 1) 0.1µF
(Note 1) CL
(Note 3)
Note 1: An external 0.1µF low frequency tantalum bypass capacitor in parallel with a 0.01µF high frequency
ceramic bypass capacitor close to the package ground and VDD pin is required.
Note 2: A low capacitance (<12pF), 10X attenuation factor, high impedance (>10Mohms), and high bandwidth
(>300MHz) passive probe is recommended.
Note 3: Capacitance value CL includes sum of all probe and fixture capacitance.
Voltage
Meter
Current
Meter
Oscilloscope Frequency
Counter
Probe
(Note 2)
www.ecliptek.com | Specification Subject to Change Without Notice | Rev A 2/19/2010 | Page 3 of 5
DIA 50 MIN
DIA 20.2 MIN
DIA 13.0 ±0.2
2.5 MIN Width
10.0 MIN Depth
Tape slot in Core
for Tape Start
DIA 40 MIN
Access Hole at
Slot Location
1.5 MIN
Tape & Reel Dimensions
*Compliant to EIA 481A
EB52W4C30N-32.768M TR
32.0 ±0.30
14.20 ±0.15
16.05 ±0.15
4.00 ±0.20
2.00 ±0.10
16.00 ±0.10 12.50 ±0.10
DIA 1.60 ±0.10
22.20
±0.10
0.40 ±0.05
5.00 ±0.10
30.4 MAX
360 MAX
1,000 pieces per reel
32.4 +2.0/-0/0
www.ecliptek.com | Specification Subject to Change Without Notice | Rev A 2/19/2010 | Page 4 of 5
T Min
S
T Max
S
Critical Zone
T to T
L P
Ramp-up Ramp-down
TL
TP
t 25°C to Peak
t Preheat
StL
tP
Temperature (T)
Time (t)
Recommended Solder Reflow Methods
EB52W4C30N-32.768M TR
Low Temperature Infrared/Convection 240°C
TS MAX to TL (Ramp-up Rate) 5°C/second Maximum
Preheat
- Temperature Minimum (TS MIN) N/A
- Temperature Typical (TS TYP) 150°C
- Temperature Maximum (TS MAX) N/A
- Time (tS MIN) 60 - 120 Seconds
Ramp-up Rate (TL to TP)5°C/second Maximum
Time Maintained Above:
- Temperature (TL)150°C
- Time (tL)200 Seconds Maximum
Peak Temperature (TP)240°C Maximum
Target Peak Temperature (TP Target) 240°C Maximum 1 Time / 230°C Maximum 2 Times
Time within 5°C of actual peak (tp)10 seconds Maximum 2 Times / 80 seconds Maximum 1 Time
Ramp-down Rate 5°C/second Maximum
Time 25°C to Peak Temperature (t) N/A
Moisture Sensitivity Level Level 1
Low Temperature Manual Soldering
185°C Maximum for 10 seconds Maximum, 2 times Maximum.
High Temperature Manual Soldering
260°C Maximum for 5 seconds Maximum, 2 times Maximum.
www.ecliptek.com | Specification Subject to Change Without Notice | Rev A 2/19/2010 | Page 5 of 5
