PD - 9.1240C IRF7304 HEXFET(R) Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 VDSS = -20V RDS(on) = 0.090 T o p V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. S O -8 Absolute Maximum Ratings Parameter I D @ TA = 25C I D @ TA = 25C I D @ TA = 70C I DM PD @TA = 25C VGS dv/dt TJ, TSTG Max. 10 Sec. Pulsed Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Units -4.7 -4.3 -3.4 -17 2.0 0.016 12 -5.0 -55 to + 150 A W W/C V V/ns C Thermal Resistance Ratings Parameter RJA Maximum Junction-to-Ambient Typ. Max. Units --- 62.5 C/W 8/25/97 IRF7304 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(ON) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance IGSS Min. -20 --- --- --- -0.70 4.0 --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V V GS = 0V, ID = -250A -0.012 --- V/C Reference to 25C, ID = -1mA --- 0.090 VGS = -4.5V, ID = -2.2A --- 0.140 VGS = -2.7V, ID = -1.8A --- --- V VDS = VGS, ID = -250A --- --- S V DS = -16V, ID = -2.2A --- -1.0 VDS = -16V, VGS = 0V A --- -25 VDS = -16V, VGS = 0V, TJ = 125C --- -100 VGS = -12V nA --- 100 VGS = 12V --- 22 ID = -2.2A --- 3.3 nC VDS = -16V --- 9.0 VGS = -4.5V, See Fig. 6 and 12 8.4 --- VDD = -10V 26 --- ID = -2.2A ns 51 --- RG = 6.0 33 --- RD = 4.5, See Fig. 10 D --- 4.0 --- LS Internal Source Inductance --- 6.0 --- Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 610 310 170 --- --- --- nH Between lead tip and center of die contact pF VGS = 0V VDS = -15V = 1.0MHz, See Fig. 5 G S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- -2.5 showing the A G integral reverse --- --- -17 p-n junction diode. S --- --- -1.0 V TJ = 25C, IS = -1.8A, VGS = 0V --- 56 84 ns TJ = 25C, IF = -2.2A --- 71 110 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD -2.2A, di/dt - 50A/s, VDD V (BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. IRF7304 100 100 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V 10 1 -1 .5V 2 0 s PU LSE W IDTH TJ = 25 C A 0.1 0.01 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V TOP -I D , D ra in -to -S o u rc e C u rre n t (A ) -I D , D ra in -to -S o u rce C u rre n t (A ) TOP 0.1 1 10 10 1 -1.5 V 2 0 s PU LSE W IDT H TJ = 15 0C 0.1 0.01 100 0.1 -V D S , Drain-to-Source Voltage (V ) R D S (o n) , D ra in -to -S o u rc e O n R e s ista n ce (N o rm a lize d ) - I D , D rain -to- S our ce C urre nt (A ) 2.0 TJ = 1 5 0 C 1 V D S = - 15 V 2 0 s P U L S E W ID TH 0.1 1.5 2.0 2.5 3.0 3.5 4.0 4.5 A 100 Fig 2. Typical Output Characteristics 100 TJ = 2 5 C 10 -VD S , D rain-to-S ource V oltage (V ) Fig 1. Typical Output Characteristics 10 1 5.0 -VG S , Ga te-to-S o urce V oltage (V ) Fig 3. Typical Transfer Characteristics A I D = -3.6 A 1.5 1.0 0.5 V G S = -4.5V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 TJ , Junction T em perature (C) Fig 4. Normalized On-Resistance Vs. Temperature IRF7304 V GS C iss C rs s C oss = = = = 10 0V, f = 1 MH z C gs + C gd , Cd s SH O R TE D C gd C ds + C gd -V G S , G a te -to -S o u rce V o lta g e (V ) C , C a p a cita n ce (p F ) 1500 C is s 1000 C os s C r ss 500 0 A 1 10 I D = -2 .2A V DS = -1 6V 8 6 4 2 FO R TES T C IR C U IT SEE FIG U R E 1 2 0 100 0 5 -VD S , D rain-to-S ource V oltage (V) 15 20 A 25 Q G , Total Gate Charge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 10 -IID , Drain Current (A) -IS D , R e ve rs e D ra in C u rre n t (A ) 10 TJ = 1 50 C TJ = 2 5C 1 VG S = 0 V 0.1 0.3 0.6 0.9 1.2 -V S D , Source-to-Drain Voltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage A 1.5 10 1ms TA = 25 C TJ = 150 C Single Pulse 1 1 10ms 10 -VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 100 IRF7304 VDS VGS 5.0 RD D.U.T. RG + VDD -ID , Drain Current (A) 4.0 -4.5 V Pulse Width 1 s Duty Factor 0.1 % 3.0 Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 1.0 0.0 25 50 75 100 TC , Case Temperature 125 10% VGS 150 ( C) td(on) Fig 9. Maximum Drain Current Vs. Ambient Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms (Z thJA ) 100 D = 0.50 0.20 10 Thermal Response 0.10 0.05 0.02 1 PDM 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 100 IRF7304 Current Regulator Same Type as D.U.T. 50K QG .2F 12V .3F -4.5 V QGS D.U.T. QGD +VDS VGS VG -3mA IG Charge Fig 12a. Basic Gate Charge Waveform ID Current Sampling Resistors Fig 12b. Gate Charge Test Circuit IRF7304 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + ** * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test RG VGS* + - * VDD * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [ VDD] Forward Drop Inductor Curent Ripple 5% *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For P-Channel HEXFETS [ ISD ] IRF7304 Package Outline SO8 Outline INCHES DIM D -B- 5 8 7 1 2 6 5 3 0.25 (.010) 4 e 6X M A M MIN A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 B .014 .018 0.36 0.46 C .0075 .0098 0.19 0.25 D .189 .196 4.80 4.98 E .150 .157 3.81 3.99 e K x 45 e1 e1 A -C- 0.10 (.004) L 8X A1 B 8X 0.25 (.010) MAX 5 H E -A- 6 C 8X .050 BASIC 1.27 BASIC .025 BASIC 0.635 BASIC .2284 .2440 5.80 K .011 .019 0.28 0.48 L 0.16 .050 0.41 1.27 8 0 8 0 6.20 RECOMMENDED FOOTPRINT NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS 6 MAX H M C A S B S MILLIMETERS MIN 0.72 (.028 ) 8X 6.46 ( .255 ) 1.78 (.070) 8X MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X Part Marking Information SO8 E X A M P LE : TH IS IS A N IR F 7 101 3 12 IN T E R N A TI ON A L R E C T IF IE R LO G O D A T E C O D E (Y W W ) Y = LA S T D IG IT O F T H E YE A R W W = W EEK XX X X F 7 101 T OP PART NUMBER W AFER LO T C O D E (LA S T 4 D IG IT S ) B O T TO M IRF7304 Tape & Reel Information SO8 Dimensions are shown in millimeters (inches) T E R M IN A L N U M BE R 1 1 2. 3 ( .48 4 ) 1 1. 7 ( .46 1 ) 8 .1 ( .3 18 ) 7 .9 ( .3 12 ) F E E D D IR E C T IO N N O TE S : 1 . CO NTR O LL IN G DIM EN S IO N : M ILL IM E TE R. 2 . A LL D IM E NS IO NS AR E S HO W N IN M ILL IM E TE R S( IN CH ES ) . 3 . O U TLINE C O N FO RM S TO E IA -4 81 & E IA - 54 1. 3 30 .00 (12 .9 92 ) MAX. 1 4.4 0 ( .5 66 ) 1 2.4 0 ( .4 88 ) N O T ES : 1. C O N T R O LL IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T LIN E C O N F O R M S T O E IA -48 1 & EIA -5 41 . 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