Oct. 2011
MITSUBISHI IGBT MODULES
CM75MX-12A
HIGH POWER SWITCHING USE
CM75MX-12A
¡IC ..................................................................... 75A
¡VCES ............................................................600V
¡CIB (3-phase Converter +
3-phase Inverter + Brake)
¡Flatbase Type / Insulated Package /
Copper base plate
¡RoHS Directive compliant
APPLICATION
General purpose Inverters, Servo Amplifiers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
53
54
55
56
57
58
59
60
61
12 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
30
29
28
27
26
25
24
23
99
121.7
＊118.1
110
±0.5
94.5
＊58.4
0
A
0.8
39
50
±0.5
57.5
62
＊4.2
＊15.48
＊11.66
＊4.06
＊13.09
＊16.9
＊15
＊18.8
＊30.24
＊34.04
＊45.48
＊49.28
＊60.72
＊64.52
＊75.96
＊79.76
＊91.2
＊95
0
(7.75)
＊28.33
＊32.14
＊66.43
＊70.24
＊81.67
＊85.48
＊89.29
＊93.1
＊96.91
＊15.48
＊19.28
＊30.72
＊34.52
＊47.38
＊51.19
＊26.9
＊23.1
＊38.34
＊34.52
0
0
3.75
4-φ5.5 MOUNTING HOLES
20.5
17
13
7
(3)
0.8
3.5
LABEL
TERMINAL t = 0.8
SECTION A
(7.4)
1.2
1.5
12.5
φ2.5
φ4.3
φ2.1
(3.81)
1.15
0.65
R(1~2) S(5~6) T(9~10) B(24~25)
GB(35)
N(57~58) N1(60~61)
P(52~53) P1(54~55)
GuN(34)
GuP(49)
EuP(48)
GvN(33)
GvP(44)
EvP(43)
U(13~14)
GwN(32)
GwP(39)
EwP(38)
V(17~18) W(21~22)
TH2(28)
TH1(29)
Es(31)
NTC
* Use both terminals (R/S/T/P/N/P1/B/N1/U/V/W) to the external connection.
＊Pin positions
with tolerance φ0.5
CIRCUIT DIAGRAM
Toleranceotherwisespecified
Division of Dimension
0.5 to 3
over 3 to 6
over 6 to 30
over 30 to 120
over 120 to 400
Tolerance
±0.2
±0.3
±0.5
±0.8
±1.2
Oct. 2011
2
MITSUBISHI IGBT MODULES
CM75MX-12A
HIGH POWER SWITCHING USE
ABSOLUTE MAXIMUM RATINGS (T
j
= 25°C, unless otherwise specified)
INVERTER PART
Symbol Parameter Conditions Rating Unit
V
CES
V
GES
I
C
I
CRM
P
tot
I
E (Note.3)
I
ERM(Note.3)
Collector-emitter voltage
Gate-emitter voltage
Collector current
Maximum collector dissipation
Emitter current
(Free wheeling diode forward current)
G-E Short
C-E Short
DC, T
C
= 70°C
Pulse
T
C
= 25°C
T
C
= 25°C
Pulse
600
±20
75
150
280
75
150
V
A
W
A
(Note. 1)
(Note. 4)
(Note. 1, 5)
(Note. 1)
(Note. 4)
BRAKE PART
Rating Unit
V
CES
V
GES
I
C
I
CRM
P
tot
V
RRM(Note.3)
I
F (Note.3)
I
FRM(Note.3)
Collector-emitter voltage
Gate-emitter voltage
Collector current
Maximum collector dissipation
Repetitive peak reverse voltage
Forward current
G-E Short
C-E Short
DC, T
C
= 97°C
Pulse
T
C
= 25°C
T
C
= 25°C
Pulse
600
±20
50
100
280
600
50
100
V
A
W
V
A
(Note. 1)
(Note. 4)
(Note. 1, 5)
(Note. 1)
(Note. 4)
Symbol Parameter Conditions
CONVERTER PART
Rating Unit
V
RRM
E
a
I
O
I
FSM
I
2
t
Repetitive peak reverse voltage
Recommended AC input voltage
DC output current
Surge forward current
C
urrent square time
3-phase full wave rectifying, T
C
= 125°C
The sine half wave 1 cycle peak value, f = 60Hz,
non-repetitive
Value for one cycle of surge current
800
220
75
750
2340
V
9
A
A
2S
(Note. 1)
Symbol Parameter Conditions
MODULE
Rating Unit
T
j
T
stg
V
isol
Junction temperature
Storage temperature
Isolation voltage
Base plate flatness
Mounting torque
Weight
Terminals to base plate, f = 60Hz, AC 1 min, RMS
On the centerline X, Y
Mounting M5 screw
(Typical)
–40 ~ +150
–40 ~ +125
2500
±0 ~ +100
2.5 ~ 3.5
270
°C
9
μm
N·m
g
Note. 8: The base plate flatness measurement points are in the following figure.
—
—
—
(Note. 8)
Symbol Parameter Conditions
+
–
X
Y
–
+
Heatsinkside
Heatsinkside
+：convex
–：concave
Oct. 2011
3
MITSUBISHI IGBT MODULES
CM75MX-12A
HIGH POWER SWITCHING USE
ELECTRICAL CHARACTERISTICS (T
j
= 25°C, unless otherwise specified)
INVERTER PART
Limits Unit
Min. Typ. Max.
I
CES
V
GE(th)
I
GES
V
CEsat
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (Note.3)
Q
rr (Note.3)
V
EC(Note.3)
R
th(j-c)Q
R
th(j-c)D
r
g
R
G
Collector cut-off current
Gate-emitter threshold voltage
Gate-emitter leakage current
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance
(Junction to case)
Internal gate resistance
External gate resistance
V
CE
= V
CES
, G-E Short
I
C
= 7.5mA, V
CE
= 10V
V
GE
= V
GES
, C-E Short
I
C
= 75A, V
GE
= 15V
I
C
= 75A, V
GE
= 15V
V
CE
= 10V,
G-E Short
V
CC
= 300V, I
C
= 75A, V
GE
= 15V
V
CC
= 300V, I
C
= 75A,
V
GE
= ±15V, R
G
= 8.2Ω,
Inductive load
(I
E
= 75A)
I
E
= 75A, G-E Short
I
E
= 75A, G-E Short
per IGBT
per free wheeling diode
T
C
= 25°C, per switch
—
6
—
1.7
1.9
1.6
—
—
—
200
—
—
—
—
—
1.8
2.0
1.95
1.9
—
—
0
—
1
7
0.5
2.1
—
—
9.3
1.0
0.3
—
100
100
300
600
200
—
2.8
—
—
0.44
0.85
—
83
—
5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.0
mA
V
μA
V
nF
nC
ns
μC
V
K/W
Ω
T
j
= 25°C
T
j
= 125°C
Chip
(Note. 6)
(Note. 1)
(Note. 6)
T
j
= 25°C
T
j
= 125°C
Chip
(Note. 6)
Symbol Parameter Conditions
BRAKE PART
Limits Unit
Min. Typ. Max.
ICES
VGE(th)
IGES
VCEsat
Cies
Coes
Cres
QG
I
RRM(Note.3)
VF(Note.3)
Rth(j-c)Q
Rth(j-c)D
rg
RG
Collector cut-off current
Gate-emitter threshold voltage
Gate-emitter leakage current
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Repetitive peak reverse current
Forward voltage
Thermal resistance
(Junction to case)
Internal gate resistance
External gate resistance
VCE = VCES, G-E Short
IC = 5mA, VCE = 10V
VGE = VGES, C-E Short
IC = 50A, VGE = 15V
IC = 50A, VGE = 15V
VCE = 10V,
G-E Short
VCC = 300V, IC = 50A, VGE = 15V
VR = VRRM
IF = 50A
IF = 50A
per IGBT
per Clamp diode
TC = 25°C
—
6
—
1.7
1.9
1.6
—
—
—
200
—
2.0
1.95
1.9
—
—
0
—
1
7
0.5
2.1
—
—
9.3
1.0
0.3
—
1
2.8
—
—
0.44
0.85
—
125
—
5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
13
mA
V
μA
V
nF
nC
mA
V
K/W
Ω
Tj = 25°C
Tj = 125°C
Chip
(Note. 6)
(Note. 1)
(Note. 6)
Tj = 25°C
Tj = 125°C
Chip
(Note. 6)
Symbol Parameter Conditions
I
RRM
V
F
R
th(j-c)
Repetitive peak reverse current
Forward voltage
Thermal resistance
(Junction to case)
V
R
= V
RRM
, T
j
= 150°C
I
F
= 75A
per Diode
—
1.2
—
20
1.6
0.24
—
—
—
mA
V
K/W
(Note. 1)
Limits Unit
Min. Typ. Max.
Symbol Parameter Conditions
CONVERTER PART
Oct. 2011
4
MITSUBISHI IGBT MODULES
CM75MX-12A
HIGH POWER SWITCHING USE
Note.1: Case temperature (TC), heat sink temperature (Ts) measured point is just under the chips. (Refer to the figure of the chip location.)
2: Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K).
3: IE, IERM, VEC, trr, Qrr and Err represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
IF, IFRM, VF, VRRM and IRRM represent ratings and characteristics of the Clamp diode of Brake part.
4: Pulse width and repetition rate should be such that the device junction temperature (T
j
) dose not exceed Tjmax rating.
5: Junction temperature (Tj) should not increase beyond 150°C.
6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of the test circuit for VCEsat and VEC)
7:
NTC THERMISTOR PART
Limits Unit
Min. Typ. Max.
R25
ΔR/R
B
(25/50)
P
25
Zero power resistance
Deviation of resistance
B constant
Power dissipation
T
C
= 25°C
T
C
= 100°C, R
100
= 493Ω
Approximate by equation
T
C
= 25°C
5.00
—
3375
—
5.15
+7.8
—
10
4.85
–7.3
—
—
kΩ
%
K
mW
(Note. 7)
Symbol Parameter Conditions
Chip Location (Top view) Dimensions in mm (tolerance: ±1mm)
MODULE
R
th(c-s)
Contact thermal resistance
(Case to heat sink)
Thermal grease applied
per 1 module 0.015 —
—K/W
(Note. 2)
(Note. 1)
Limits Unit
Min. Typ. Max.
Symbol Parameter Conditions
C
RR
N
C
SR
N
C
TR
N
T
Ur
P
D
Ui
P
D
Bi
rD
W
i
P
D
Vi
P
T
Ur
N
D
Ui
N
D
W
i
N
D
Vi
N
T
VrTh
P
T
Br
r
T
W
r
PT
W
r
N
T
Vr
N
C
RR
PC
SR
PC
TR
P
53
54
55
56
57
58
59
60
61
12 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
30
29
28
27
26
25
24
23
(121.7)
(110)
(50)
(62)
0
0
LABEL SIDE
29.5
25.5
26.5
29.5
42.9
0
39.9
50.3
65.5
71.0
74.6
84.6
89.6
0
17.8
27.1 (Tr/UP, Tr/VP, Tr/WP, Th)
34.7 (Di/UP, Di/VP, Di/WP)
42.0 (Di/UN, Di/VN)
35.2 (Tr/UN, Tr/VN)
41.2 (Di/WN)
27.6 (Di/Br)
33.6 (Tr/WN)
95.5
98.2
101.2
26.6
37.0
47.4
64.2
73.0
77.8
81.4
86.1
91.4
97.9
Each mark points the center position of each chip. Tr**: IGBT, Di**: FWDi (DiBr: Clamp diode), CR**: Converter diode, Th: NTC thermistor
R
25
: resistance at absolute temperature T
25
[K]; T
25
= 25 [°C]+273.15 = 298.15 [K]
R
50
: resistance at absolute temperature T
50
[K]; T
50
= 50 [°C]+273.15 = 323.15 [K]
B
(25/50)
= In( )/( )
R
25
R
50
1
T
25
1
T
50
Oct. 2011
5
MITSUBISHI IGBT MODULES
CM75MX-12A
HIGH POWER SWITCHING USE
t
rr,
Q
rr
test waveform
t
IE
trr
Irr 1/2 ✕ Irr
Qrr = 1/2 ✕ Irr ✕ trr
0A
Switching time test circuit and waveforms
VCC+
IC
VCE
IE
Arm
RG
–VGE
+VGE
–VGE
Load
0V VGE
VGE
IC
td(on) td(off)
trtf
90%
10%
0V
0A
90%
0%
P side Inverter part T
r
(example of U arm)
G-E short
(GvP-EvP, GwP-EwP, GvN-Es, GwN-Es, GB-Es)
N side Inverter part T
r
(example of U arm)
G-E short
(GvP-EvP, GwP-EwP, GvN-Es, GwN-Es, GB-Es)
B
r
T
r
G-E short
(GuP-EuP, GvP-EvP, GwP-EwP,
GuN-Es, GvN-Es, GwN-Es)
P side Inverter part D
i
(example of U arm)
G-E short
(GvP-EvP, GwP-EwP, GvN-Es, GwN-Es, GB-Es)
N side Inverter part D
i
(example of U arm)
G-E short
(GvP-EvP, GwP-EwP, GvN-Es, GwN-Es, GB-Es)
B
r
D
i
G-E short
(GuP-EuP, GvP-EvP, GwP-EwP,
GuN-Es, GvN-Es, GwN-Es)
IC
VGE = 15V
P1
U
N1
G-E short
GuP
EuP
GuN
Es
V
IC
VGE = 15V
P1
U
N1
G-E short
GuP
EuP
GuN
Es
VIC
VGE = 15V
P1
B
N1
GB
Es
V
IE
G-E short
P1
U
N1
G-E short
GuP
EuP
GuN
Es
V
IE
G-E short
P1
U
N1
G-E short
GuP
EuP
GuN
Es
V
IF
G-E short
P1
B
N1
GB
Es
V
V
CEsat
test circuit
V
EC
/V
F
test circuit
Oct. 2011
6
MITSUBISHI IGBT MODULES
CM75MX-12A
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
0
25
50
75
100
125
150
100 246813579
T
j
= 25°C
V
GE
=
20V
15
0
0.5
1
1.5
2
2.5
3
3.5
025
50 75 100 125 150
T
j
= 25°C
T
j
= 125°C
V
GE
= 15V
10
0
2
4
6
8
206 8 10 12 14 16 18
T
j
= 25°C
I
C
= 150A
I
C
= 75A
I
C
= 30A
10
2
10
1
5
7
2
3
0 0.5 1 1.5 2 2.5 3 3.5 4
10
3
5
7
2
3
10
–1
210
0
357 2 10
1
357 210
2
357
G-E short
10
0
10
1
23 57 10
2
23 57
Conditions:
VCC = 300V
VGE = ±15V
RG = 8.2Ω
Tj = 125°C
Inductive load
12
13
11
10
9
8
10
–1
10
–2
10
0
5
7
10
1
2
3
5
7
2
3
5
7
2
3
Cies
Coes
Cres
10
0
7
5
3
2
10
1
7
5
3
2
10
2
7
5
3
2
10
3
7
5
3
2
10
4
t
d(off)
t
d(on)
t
f
t
r
T
j
= 25°C
T
j
= 125°C
OUTPUT CHARACTERISTICS
(TYPICAL) Inverter part
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER VOLTAGE V
CE
(V) COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL) Inverter part
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL) Inverter part
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL) Inverter part
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
CAPACITANCE CHARACTERISTICS
(TYPICAL) Inverter part
CAPACITANCE (nF)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
EMITTER CURRENT I
E
(A)
SWITCHING TIME (ns)
Oct. 2011
7
MITSUBISHI IGBT MODULES
CM75MX-12A
HIGH POWER SWITCHING USE
10
0
10
0
10
–1
10
1
5
7
10
2
2
3
5
7
2
3
5
7
2
3
Conditions:
VCC = 300V
VGE = ±15V
IC, IE = 75A
Tj = 125°C
Inductive load
10
1
57
10
2
23 5723
Eoff
Eon
Err
10
3
10
2
10
1
2
3
5
7
2
3
5
7
10
0
10
1
57
10
2
23 5723
10
1
10
0
10
–1
Conditions:
VCC = 300V
VGE = ±15V
RG = 8.2Ω
Tj = 125°C
Inductive load
2
3
5
7
2
3
5
7
10
0
10
1
57
10
2
23 5723
Eoff
Eon
Err
10
3
10
2
10
1
Conditions:
VCC = 300V
VGE = ±15V
RG = 8.2Ω
Tj = 25°C
Inductive load
2
3
5
7
2
3
5
7
10
0
10
1
57
10
2
23 5723
trr
Irr
td(off)
td(on)
tr
tf
0 100 200 300
0
5
10
15
20
VCC = 200V
VCC = 300V
IC = 75A
10
–3
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
10
–5
23 57
10
–4
23 57
10
–3
23 57
10
–2
23 57
10
–1
23 57
10
0
23 57
10
1
Inverter IGBT part : Per unit base = R
th(j–c)
= 0.44K/W
Inverter FWDi part : Per unit base = R
th(j–c)
= 0.85K/W
Converter-Di part : Per unit base = R
th(j–c)
= 0.24K/W
Brake IGBT part : Per unit base = R
th(j–c)
= 0.44K/W
Brake Clamp-Di part : Per unit base = R
th(j–c)
= 0.85K/W
Conditions:
VCC = 300V
VGE = ±15V
IC = 75A
Tj = 125°C
Inductive load
Single pulse
TC = 25°C
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
SWITCHING LOSS (mJ/pulse)
GATE RESISTANCE RG
(Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
SWITCHING TIME (ns)
GATE RESISTANCE RG
(Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
SWITCHING LOSS (mJ/pulse) lrr
(A), trr
(ns)
COLLECTOR CURRENT IC
(A)
EMITTER CURRENT IE
(A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE WHEELING DIODE
(TYPICAL) Inverter part
EMITTER CURRENT IE
(A)
GATE CHARGE CHARACTERISTICS
(TYPICAL) Inverter part
GATE-EMITTER VOLTAGE VGE (V)
GATE CHARGE QG (nC)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j–c)
TIME (s)
Oct. 2011
8
MITSUBISHI IGBT MODULES
CM75MX-12A
HIGH POWER SWITCHING USE
101
100
102
5
7
103
2
3
5
7
2
3
5
7
2
3
100
101
2
3
5
102
7
2
3
5
7
00.511.5 22.5 33.5 4
Tj = 25°C
Tj = 125°C
00.5 1.0 1.5 2.0
Tj = 25°C
Tj = 125°C
0
0.5
1
1.5
2
2.5
3
3.5
010
20 30 40 50 60 70 80 90 100
VGE = 15V
Tj = 25°C
Tj = 125°C
RECTIFIER DIODE
FORWARD CHARACTERISTICS
(TYPICAL) Converter part
FORWARD CURRENT lF (A)
FORWARD VOLTAGE VF (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL) Brake part
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
COLLECTOR CURRENT IC (A)
CLAMP DIODE
FORWARD CHARACTERISTICS
(TYPICAL) Brake part
FORWARD CURRENT IF (A)
FORWARD VOLTAGE VF (V)
