BSM200GA170DN2S - Infineon Technologies [EUPEC]

1 Oct-27-1997

BSM 200 GA 170 DN2

IGBT Power Module

• Single switch

• Including fast free-wheeling diodes

• Package with insulated metal base plate

• RG on,min = 6.8 Ohm

Type V CE IC Package Ordering Code

BSM 200 GA 170 DN2 1700V 290A SINGLE SWITCH 1 C67070-A2705-A67

BSM 200 GA 170 DN2 S 1700V 290A SSW SENSE 1 C67070-A2707-A67

Maximum Ratings

Parameter Symbol Values Unit

Collector-emitter voltage V CE 1700 V

Collector-gate voltage

RGE = 20 kΩV CGR 1700

Gate-emitter voltage V GE ± 2 0

DC collector current

TC = 25 °C

TC = 80 °C

IC

200

290 A

Pulsed collector current, tp = 1 ms

TC = 25 °C

TC = 80 °C

ICpuls

400

580

Power dissipation per IGBT

TC = 25 °C P to t 1750 W

Chip temperature Tj + 150 °C

Storage temperature Tstg -40 ... + 125

Thermal resistance, chip case RthJC ≤ 0 . 0 7 K / W

Diode thermal resistance, chip case RthJCD ≤ 0.21

Insulation test voltage, t = 1min. V is 4000 Vac

Creepage distance - 20 mm

Clearance - 11

DIN humidity category, DIN 40 040 - F sec

IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56

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2 Oct-27-1997

BSM 200 GA 170 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Gate threshold voltage

V GE = VCE, IC = 16 mA V GE(th) 4.8 5.5 6.2 V

Collector-emitter saturation voltage

V GE = 1 5 V , IC = 200 A, Tj = 2 5 ° C

V GE = 1 5 V , IC = 200 A, Tj = 125 °C

V CE(sat)

-

- 4.6

3.4 5.3

3.9

Zero gate voltage collector current

V CE = 1700 V, V GE = 0 V , Tj = 2 5 ° C

V CE = 1700 V, V GE = 0 V , Tj = 125 °C

ICES

-

- 6.4

1.6 -

2 mA

Gate-emitter leakage current

V GE = 2 0 V , V CE = 0 V IGES - - 320 nA

AC Characteristics

Transconductance

V CE = 20 V, IC = 200 A gfs 72 - -S

Input capacitance

V CE = 25 V, V GE = 0 V , f = 1 M H z Ciss - 32 - nF

Output capacitance

V CE = 25 V, V GE = 0 V , f = 1 M H z Coss - 2.5 -

Reverse transfer capacitance

V CE = 25 V, V GE = 0 V , f = 1 M H z Crss - 1 -

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3 Oct-27-1997

BSM 200 GA 170 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Switching Characteristics, Inductive Load at Tj = 125 °C

Turn-on delay time

V CC = 1200 V, V GE = 1 5 V , IC = 200 A

RGon = 6.8 Ω

td(on)

- 530 1000

ns

Rise time

V CC = 1200 V, V GE = 1 5 V , IC = 200 A

RGon = 6.8 Ω

tr

- 200 400

Turn-off delay time

V CC = 1200 V, V GE = -15 V, IC = 200 A

RGoff = 6.8 Ω

td(off)

- 1250 1800

Fall time

V CC = 1200 V, V GE = -15 V, IC = 200 A

RGoff = 6.8 Ω

tf

- 110 160

Free-Wheel Diode

Diode forward voltage

IF = 200 A, V GE = 0 V , Tj = 2 5 ° C

I F = 200 A, V GE = 0 V , Tj = 125 °C

V F

-

- 2.1

2.3 -

2.8 V

Reverse recovery time

IF = 200 A, V R = -1200 V, V GE = 0 V

di F/dt = -1400 A/µs, Tj = 125 °C

trr

- 0.8 -

µs

Reverse recovery charge

IF = 200 A, V R = -1200 V, V GE = 0 V

di F/dt = -1400 A/µs

Tj = 2 5 ° C

Tj = 125 °C

Qrr

-

- 50

14 -

-

µC

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4 Oct-27-1997

BSM 200 GA 170 DN2

Power dissipation

P tot = ƒ( T C )

parameter: T j

≤ 150 °C

0 20 40 60 80 100 120 °C 160

TC

0

200

400

600

800

1000

1200

1400

W

1800

P tot

Safe operating area

IC = ƒ( VCE)

parameter: D = 0 , TC = 2 5 ° C , T j

≤ 150 °C

0

10

1

10

2

10

3

10

A

I C

10 0 10 1 10 2 10 3 V

VCE

DC

10 ms

1 ms

100 µs

10 µs

t p = 1 . 4 µ s

Collector current

IC = ƒ ( T C )

parameter: V GE ≥ 15 V , T j

≤ 150 °C

0 20 40 60 80 100 120 °C 160

TC

0

40

80

120

160

200

240

A

320

I C

Transient thermal impedance IGBT

Z th JC = ƒ ( tp )

parameter: D = tp / T

-4

10

-3

10

-2

10

-1

10

0

10

K/W

Z thJC

10 -5 10 -4 10 -3 10 -2 10 -1 10 0

s

tp

single pulse 0.01

0.02

0.05

0.10

0.20

D = 0.50

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5 Oct-27-1997

BSM 200 GA 170 DN2

Typ. output characteristics

IC = f (VCE)

parameter: tp = 80 µs, T j = 25 °C

0.0 1.0 2.0 3.0 4.0 V 6.0

V CE

0

50

100

150

200

250

300

A

400

I C

17V

15V

13V

11V

9V

7V

Typ. output characteristics

IC = f (VCE)

parameter: tp = 80 µs, T j = 125 °C

0.0 1.0 2.0 3.0 4.0 V 6.0

VCE

0

50

100

150

200

250

300

A

400

I C

17V

15V

13V

11V

9V

7V

Typ. transfer characteristics

IC = f (VGE)

parameter: tp = 80 µs, VCE = 20 V

0 2 4 6 8 10 V 14

V GE

0

100

200

300

400

500

600

A

800

I C

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6 Oct-27-1997

BSM 200 GA 170 DN2

Typ. gate charge

V GE = ƒ( Q Gate )

parameter: IC puls = 200 A

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 µC 3.4

QGate

0

2

4

6

8

10

12

14

16

V

20

V GE

1200 V800 V

Typ. capacitances

C = f (V CE)

parameter: VGE = 0, f = 1 MHz

0 5 10 15 20 25 30 V 40

VCE

-1

10

0

10

1

10

2

10

nF

C Ciss

Coss

Crss

Reverse biased safe operating area

ICpuls = f(VCE) , T j = 150°C

parameter: V GE = ± 15 V, tp ≤ 1 ms, L < 20 nH

0 200 400 600 800 1000 1200 1400 V 1800

V CE

0.0

0.5

1.0

1.5

2.5

ICpulsIC

di/dt = 1000A/µs

3000A/µs

5000A/µs

Short circuit safe operating area

ICsc = f(VCE) , T j = 150°C

parameter: V GE = ± 15 V, tSC ≤ 10 µs, L < 20 nH

0 200 400 600 800 1000 1200 1400 V 1800

V CE

0

2

4

6

8

12

ICsc /IC

circuit: >1s

° time between short

short circuit: <1000

° allowed numbers of

di/dt = 1000A/µs

3000A/µs

5000A/µs

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7 Oct-27-1997

BSM 200 GA 170 DN2

Typ. switching time

I = f (IC) , inductive load , Tj = 125°C

par.: VCE = 1200 V, VGE = ± 15 V, R G = 6.8 Ω

0 100 200 300 A 500

I C

1

10

2

10

3

10

4

10

ns

t

tdoff

tr

tf

tdon

Typ. switching time

t = f (RG) , inductive load , T j = 125°C

par.: VCE = 1200 V, VGE = ± 15 V, IC = 200 A

0 5 10 15 20 25 30 Ω 40

RG

1

10

2

10

3

10

4

10

ns

t tdoff

tr

tdon

tf

Typ. switching losses

E = f (IC) , inductive load , T j = 125°C

par.: VCE = 1200 V, VGE = ± 15 V, R G = 6.8 Ω

0 100 200 300 A 500

I C

0

100

200

300

400

mWs

600

E

Eon

Eoff

Typ. switching losses

E = f (RG) , inductive load , Tj = 1 2 5 ° C

par.: VCE = 1200 V, VGE = ± 15 V, IC = 200 A

0 5 10 15 20 25 30 Ω 40

RG

0

100

200

300

400

mWs

600

E

Eon

Eoff

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8 Oct-27-1997

BSM 200 GA 170 DN2

Forward characteristics of fast recovery

reverse diode IF = f(VF)

parameter: T j

0.0 0.5 1.0 1.5 2.0 2.5 V 3.5

V F

0

50

100

150

200

250

300

A

400

I F

T j=25°C

=125°C

j

T

Transient thermal impedance Diode

Z th JC = ƒ ( tp )

parameter: D = tp / T

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

K/W

Z thJC

10 -5 10 -4 10 -3 10 -2 10 -1 10 0

s

tp

single pulse

0.01

0.02

0.05

0.10

0.20

D = 0.50

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9 Oct-27-1997

BSM 200 GA 170 DN2

Circuit Diagram

Package Outlines

Dimensions in mm

Weight: 420 g

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Attention

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staff. This Data Sheet is describing the specification of the products for which a

warranty is granted exclusively pursuant the terms and conditions of the supply

agreement. There will be no guarantee of any kind for the product and its

specifications. Changes to the Data Sheet are reserved.

You and your technical departments will have to evaluate the suitability of the

product for the intended application and the completeness of the product data

with respect to such application. Should you require product information in

excess of the data given in the Data Sheet, please contact your local Sales Office

via “www.eupec.com / sales & contact”.

Warning

Due to technical requirements the products may contain dangerous substances.

For information on the types in question please contact your local Sales Office via

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