BSM 200 GA 170 DN2 IGBT Power Module * Single switch * Including fast free-wheeling diodes * Package with insulated metal base plate * RG on,min = 6.8 Ohm Type VCE BSM 200 GA 170 DN2 BSM 200 GA 170 DN2 S IC Package Ordering Code 1700V 290A SINGLE SWITCH 1 C67070-A2705-A67 1700V 290A SSW SENSE 1 C67070-A2707-A67 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 k Values 1700 Unit V 1700 Gate-emitter voltage VGE DC collector current IC 20 A TC = 25 C 290 TC = 80 C 200 Pulsed collector current, tp = 1 ms ICpuls TC = 25 C 580 TC = 80 C 400 Power dissipation per IGBT W Ptot TC = 25 C 1750 Chip temperature Tj + 150 Storage temperature Tstg Thermal resistance, chip case RthJC 0.07 Diode thermal resistance, chip case RthJCD 0.21 Insulation test voltage, t = 1min. Vis Creepage distance C -40 ... + 125 K/W 4000 Vac - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 1 http://store.iiic.cc/ sec 40 / 125 / 56 Oct-27-1997 BSM 200 GA 170 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage V VGE(th) VGE = VCE, IC = 16 mA 4.8 5.5 6.2 VGE = 15 V, IC = 200 A, Tj = 25 C - 3.4 3.9 VGE = 15 V, IC = 200 A, Tj = 125 C - 4.6 5.3 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) mA ICES VCE = 1700 V, VGE = 0 V, Tj = 25 C - 1.6 2 VCE = 1700 V, VGE = 0 V, Tj = 125 C - 6.4 - Gate-emitter leakage current nA IGES VGE = 20 V, VCE = 0 V - - 320 AC Characteristics Transconductance VCE = 20 V, IC = 200 A Input capacitance 72 nF - 32 - - 2.5 - - 1 - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S gfs Crss VCE = 25 V, VGE = 0 V, f = 1 MHz 2 http://store.iiic.cc/ Oct-27-1997 BSM 200 GA 170 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) ns VCC = 1200 V, VGE = 15 V, IC = 200 A RGon = 6.8 Rise time - 530 1000 - 200 400 - 1250 1800 - 110 160 tr VCC = 1200 V, VGE = 15 V, IC = 200 A RGon = 6.8 Turn-off delay time td(off) VCC = 1200 V, VGE = -15 V, IC = 200 A RGoff = 6.8 Fall time tf VCC = 1200 V, VGE = -15 V, IC = 200 A RGoff = 6.8 Free-Wheel Diode Diode forward voltage V VF IF = 200 A, VGE = 0 V, Tj = 25 C - 2.3 2.8 IF = 200 A, VGE = 0 V, Tj = 125 C - 2.1 - Reverse recovery time s trr IF = 200 A, VR = -1200 V, VGE = 0 V diF/dt = -1400 A/s, Tj = 125 C Reverse recovery charge - 0.8 C Qrr IF = 200 A, VR = -1200 V, VGE = 0 V diF/dt = -1400 A/s Tj = 25 C - 14 - Tj = 125 C - 50 - 3 http://store.iiic.cc/ Oct-27-1997 BSM 200 GA 170 DN2 Power dissipation Ptot = (TC) parameter: Tj 150 C Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 3 1800 t = 1.4s p W Ptot A IC 1400 10 s 10 2 1200 100 s 1000 800 1 ms 10 1 600 400 10 ms 200 0 0 20 40 60 80 100 120 C 10 0 0 10 160 10 1 10 3 DC 10 2 TC Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C Transient thermal impedance Zth JC = (tp) parameter: D = tp / T IGBT 10 0 320 K/W A IC V VCE ZthJC 240 10 -1 200 10 -2 160 D = 0.50 0.20 120 0.10 0.05 10 -3 80 0.02 single pulse 0.01 40 0 0 20 40 60 80 100 120 C 160 TC 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 http://store.iiic.cc/ Oct-27-1997 BSM 200 GA 170 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 s, Tj = 25 C parameter: tp = 80 s, Tj = 125 C 400 A IC 300 400 A 17V 15V 13V 11V 9V 7V IC 300 250 250 200 200 150 150 100 100 50 50 0 0.0 17V 15V 13V 11V 9V 7V 0 1.0 2.0 3.0 4.0 V 6.0 VCE 0.0 1.0 2.0 3.0 4.0 V 6.0 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 800 A IC 600 500 400 300 200 100 0 0 2 4 6 8 10 V 14 VGE 5 http://store.iiic.cc/ Oct-27-1997 BSM 200 GA 170 DN2 Typ. gate charge VGE = (QGate) parameter: IC puls = 200 A Typ. capacitances C = f (VCE) parameter: VGE = 0, f = 1 MHz 10 2 20 V nF VGE 16 Ciss C 14 800 V 1200 V 10 1 12 10 Coss 8 10 0 6 Crss 4 2 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 10 -1 0 2.8 C 3.4 5 10 15 20 25 30 V VCE QGate 40 Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V, tp 1 ms, L < 20 nH ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 20 nH 2.5 12 ICpulsIC ICsc/IC 1.5 di/dt = 1000A/s 3000A/s 5000A/s 8 di/dt = 1000A/s 3000A/s 5000A/s 6 1.0 4 allowed numbers of short circuit: <1000 time between short 2 circuit: >1s 0.5 0.0 0 200 400 600 800 1000 1200 1400 V 1800 VCE 6 http://store.iiic.cc/ 0 0 200 400 600 800 1000 1200 1400 V 1800 VCE Oct-27-1997 BSM 200 GA 170 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C t = f (RG) , inductive load , Tj = 125C par.: VCE = 1200 V, VGE = 15 V, RG = 6.8 par.: VCE = 1200 V, VGE = 15 V, IC = 200 A 10 4 10 4 ns ns t tdoff t tdoff 10 3 10 3 tdon tdon tr 10 2 10 1 0 tr 10 2 tf 100 200 300 A 10 1 0 500 tf 5 10 15 20 25 30 IC 40 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C E = f (RG) , inductive load , Tj = 125C par.: VCE = 1200 V, VGE = 15 V, RG = 6.8 par.: VCE = 1200 V, VGE = 15 V, IC = 200 A 600 600 mWs mWs E E 400 400 Eon 300 300 200 200 Eon Eoff 100 0 0 100 100 200 300 A 500 IC 0 0 Eoff 5 10 15 20 25 30 40 RG 7 http://store.iiic.cc/ Oct-27-1997 BSM 200 GA 170 DN2 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj Diode 10 0 400 K/W A IF Tj=125C Tj=25C ZthJC 300 250 10 -1 10 -2 200 D = 0.50 10 -3 150 0.20 0.10 100 10 -4 0.05 single pulse 0.02 0.01 50 0 0.0 0.5 1.0 1.5 2.0 2.5 V VF 3.5 10 -5 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 8 http://store.iiic.cc/ Oct-27-1997 BSM 200 GA 170 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 420 g 9 http://store.iiic.cc/ Oct-27-1997 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. Should you require product information in excess of the data given in the Data Sheet, please contact your local Sales Office via "www.eupec.com / sales & contact". Warning Due to technical requirements the products may contain dangerous substances. For information on the types in question please contact your local Sales Office via "www.eupec.com / sales & contact". http://store.iiic.cc/