Parameter Max. Units
VDS Drain- Source Voltage -12 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V ±9.5
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V ±6.0 A
IDM Pulsed Drain Current ±76
PD @TA = 25°C Power Dissipation 2.5
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
EAS Single Pulse Avalanche Energy60 mJ
VGS Gate-to-Source Voltage ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
7/7/99
IRF7233
HEXFET® Power MOSFET
Parameter Max. Units
RθJA Maximum Junction-to-Ambient50 °C/W
Thermal Resistance
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
VDSS = -12V
RDS(on) = 0.020Ω
Description
Absolute Maximum Ratings
W
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lUltra Low On-Resistance
lP-Channel MOSFET
lSurface Mount
lAvailable in Tape & Reel
Top V iew
8
1
2
3
45
6
7
D
D
DG
S
A
D
S
S
PD- 91849D
SO-8
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Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V
trr Reverse Recovery Time ––– 43 65 ns TJ = 25°C, IF = -2.5A
Qrr Reverse Recovery Charge ––– 35 52 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
––– –––
––– ––– -76
-2.5 A
When mounted on 1 inch square copper board, t<10 sec
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
Ω
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
S
D
G
Starting TJ = 25°C, L = 1.3mH
RG = 25Ω, IAS = 9.5A.
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -14 –– – – –– V VGS = 0V, ID = -5.0mA
V(BR)DSS Drain-to-Source Breakdown Voltage -12 –– – – –– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.001 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.013 0.020 VGS = -4.5V, ID = -9.5A
––– 0.023 0.033 VGS = -2.5V, ID = -6.0A
VGS(th) Gate Threshold Voltage -0.6 ––– ––– V VDS = VGS, ID = -250µA
gfs Forward Transconductance 3.3 ––– ––– S VDS = -10V, ID = -9.5A
––– ––– -10 VDS = -12V, VGS = 0V
––– ––– -1.0 VDS = -9.6V, VGS = 0V
––– ––– -100 VDS = -12V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– –– – 100 VGS = 12V
QgTotal Gate Charge –– – 49 74 ID = -9.5A
Qgs Gate-to-Source Charge ––– 9.3 14 nC VDS = -10V
Qgd Gate-to-Drain ("Miller") Charge ––– 22 32 VGS = -5.0V
td(on) Turn-On Delay Time ––– 26 ––– VDD = -10V
trRise Time ––– 540 ––– ID = -9.5A
td(off) Turn-Off Delay Time ––– 77 ––– RD = 1.0Ω
tfFall Time ––– 370 ––– RG = 6.2Ω
Ciss Input Capacitance ––– 4530 6000 VGS = 0V
Coss Output Capacitance ––– 2400 ––– pF VDS = -10V
Crss Reverse Transfer Capacitance ––– 2220 ––– ƒ = 1.0kHz
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0
20
40
60
80
100
0246810
D
DS
20µs PULSE WIDTH
T = 25°C
A
-I , Drain-to-S ource C urrent (A)
-V , D ra in -to-So urce V olta
g
e
(
V
)
J
-1.5V
VGS
TO P - 7 .5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
0
20
40
60
80
100
0246810
D
DS
20 µs PU L SE WIDTH
T = 150°C A
-I , Dra in- to-S ou rce Cu rre n t (A )
-V , D r a in -to -S o u r ce Volta
g
e
(
V
)
J
VGS
TOP - 7.5 V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
-1.5V
1
10
100
1.0 1.5 2.0 2.5 3.0
T = 25 °C
T = 150°C
J
J
GS
D
A
-I , Dra in-to - So urc e Cu rr e n t (A)
-V , G ate -to -S ource V o lta
g
e
(
V
)
V = -1 0 V
20µ s PU LS E WID TH
DS
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-4.5V
-9.5A
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
2000
3000
4000
5000
6000
024681012
C, Capacitance (pF)
A
DS
-V , Drain-to-Source Volta
g
e
(
V
)
C
iss
C
oss
C
rss
GS
iss
g
s
g
d d s
rss
g
d
oss ds
g
d
V = 0V
,
f = 1k Hz
C = C + C
,
C SH O R TE D
C = C
C = C + C
1
10
100
0.0 1.0 2.0 3.0
T = 25°C
T = 150°C
J
J
V = 0 V
GS
SD
SD
A
-I , Rev erse D rain C u rrent (A)
-V , Source -t o- D r a in V olt a
g
e
(
V
)
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Sin
g
le Pulse
T
T = 150 C
= 25 C
°°
J
A
-V , Drain-to-Source Volta
g
e (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
010 20 30 40 50 60 70
0
2
4
6
8
10
Q , Total Gate Char
g
e (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D-9.5A V =-10V
DS
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature Fig 10. Maximum Avalanche Energy
Vs. Drain Current
25 50 75 100 125 150
0.0
2.0
4.0
6.0
8.0
10.0
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
25 50 75 100 125 150
0
20
40
60
80
100
120
140
Startin
T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-4.2A
-7.6A
-9.5A
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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SO-8 Package Details
K x 45°
C
8X
L
8X
θ
H
0.25 ( .0 1 0) M A M
A
0 .10 (.004)
B 8X
0.2 5 (.0 10 ) M C A S B S
- C -
6X
e
- B -
D
E
- A -
8 7 6 5
1 2 3 4
5
6
5
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
1 .78 (.070)
8X
6.46 ( .255 )
1.27 ( .050 )
3 X
DIM INC HE S MILLIME TERS
MIN MAX MIN MAX
A .0532 .0688 1 .35 1 .75
A1 .0040 .0098 0 .10 0 .25
B .014 .018 0 .36 0 .46
C .00 7 5 .00 9 8 0.1 9 0. 2 5
D .18 9 .19 6 4 .8 0 4 . 9 8
E .150 .157 3 .81 3 .99
e .0 5 0 B AS IC 1 .27 BASIC
e 1 .0 2 5 B AS IC 0 .63 5 BA SIC
H .22 8 4 .24 4 0 5.8 0 6. 2 0
K .011 .019 0 .28 0 .48
L 0.16 .050 0.41 1.27
θ
0 ° 8 ° 0 ° 8 °
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. D IMENS IONS ARE S HO W N IN MIL L IMETERS ( IN CHES ) .
4. O UT L IN E C ONFORMS T O JEDEC OUT L INE M S-0 1 2AA.
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOL D PRO T RU SIONS NOT TO EXC EE D 0.2 5 ( .0 06 ) .
DIM EN SIO NS IS THE L ENGT H O F LEAD FOR S OLDER ING T O A S UBSTR AT E..
5
6
A1
e1
θ
Part Marking
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WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 7/99
33 0.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CO NTRO LLING DIMEN SIO N : MILLIM ETER .
2. O U TL INE CO N FO R MS TO E IA-481 & EIA-541.
FEED DIRECTION
TERM INAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CO NTR OLLING DIM ENSION : M ILLIM ETER.
2. ALL DIM ENSION S ARE SHOWN IN MILLIM ETERS(INCHES).
3. O UTLINE C O N FORM S TO EIA-481 & EIA-541.
Tape and Reel
SO-8
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