IS42S16400F IS45S16400F 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM FEATURES * Clock frequency: 200, 166, 143, 133 MHz * Fully synchronous; all signals referenced to a positive clock edge * Internal bank for hiding row access/precharge * Single 3.3V power supply * LVTTL interface * Programmable burst length - (1, 2, 4, 8, full page) * Programmable burst sequence: Sequential/Interleave * Self refresh modes * Auto refresh (CBR) * 4096 refresh cycles every 64 ms (Com, Ind, A1 grade) or 16ms (A2 grade) * Random column address every clock cycle * Programmable CAS latency (2, 3 clocks) * Burst read/write and burst read/single write operations capability * Burst termination by burst stop and precharge command OPTIONS * Package: 54-pin TSOP II 54-ball FBGA (8mm x 8mm) * Operating Temperature Range Commercial (0oC to +70oC) Industrial (-40oC to +85oC) Automotive Grade A1 (-40oC to +85oC) Automotive Grade A2 (-40oC to +105oC) DECEMBER 2011 OVERVIEW ISSI's 64Mb Synchronous DRAM is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. KEY TIMING PARAMETERS Parameter Clk Cycle Time CAS Latency = 3 CAS Latency = 2 Clk Frequency CAS Latency = 3 CAS Latency = 2 Access Time from Clock CAS Latency = 3 CAS Latency = 2 -5 -6 -7 Unit 5 7.5 6 7.5 7 7.5 ns ns 200 133 166 133 143 133 Mhz Mhz 5 6 5.4 6 5.4 6 ns ns ADDRESS TABLE Parameter 4M x 16 Configuration 1M x 16 x 4 banks Refresh Count Com./Ind. 4K/64ms A1 4K/64ms A2 4K/16ms Row Addresses A0-A11 Column Addresses A0-A7 Bank Address Pins BA0, BA1 Auto Precharge Pins A10/AP Copyright (c) 2011 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 1 IS42S16400F IS45S16400F GENERAL DESCRIPTION The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 4,096 rows by 256 columns by 16 bits. The 64Mb SDRAM includes an AUTO REFRESH MODE, and a power-saving, power-down mode. All signals are registered on the positive edge of the clock signal, CLK. All inputs and outputs are LVTTL compatible. The 64Mb SDRAM has the ability to synchronously burst data at a high data rate with automatic column-address generation, the ability to interleave between internal banks to hide precharge time and the capability to randomly change column addresses on each clock cycle during burst access. A self-timed row precharge initiated at the end of the burst sequence is available with the AUTO PRECHARGE function enabled. Precharge one bank while accessing one of the other three banks will hide the precharge cycles and provide seamless, high-speed, random-access operation. SDRAM read and write accesses are burst oriented starting at a selected location and continuing for a programmed number of locations in a programmed sequence. The registration of an ACTIVE command begins accesses, followed by a READ or WRITE command. The ACTIVE command in conjunction with address bits registered are used to select the bank and row to be accessed (BA0, BA1 select the bank; A0-A11 select the row). The READ or WRITE commands in conjunction with address bits registered are used to select the starting column location for the burst access. Programmable READ or WRITE burst lengths consist of 1, 2, 4 and 8 locations, or full page, with a burst terminate option. FUNCTIONAL BLOCK DIAGRAM DQM DATA IN BUFFER COMMAND DECODER & CLOCK GENERATOR 16 MODE REGISTER 12 DQ 0-15 SELF REFRESH A11 CONTROLLER A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 BA0 BA1 16 REFRESH CONTROLLER 16 VDD/VDDQ DATA OUT BUFFER GND/GNDQ 16 12 MULTIPLEXER REFRESH COUNTER ROW ADDRESS LATCH 12 12 COLUMN ADDRESS LATCH ROW ADDRESS BUFFER ROW DECODER CLK CKE CS RAS CAS WE A10 4096 4096 4096 4096 MEMORY CELL ARRAY BANK 0 SENSE AMP I/O GATE 256K (x 16) BANK CONTROL LOGIC 8 BURST COUNTER COLUMN ADDRESS BUFFER 2 COLUMN DECODER 8 Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 IS42S16400F IS45S16400F PIN CONFIGURATION package code: B 54 bALL fbga (Top View) (8 mm x 8 mm Body, 0.8 mm Ball Pitch) 1 2 3 4 5 6 7 8 9 A B C D E F G H J GND DQ15 GNDQ VDDQ DQ0 VDD DQ14 DQ13 VDDQ GNDQ DQ2 DQ1 DQ12 DQ11 GNDQ VDDQ DQ4 DQ3 DQ10 DQ9 VDDQ GNDQ DQ6 DQ5 DQ8 NC GND VDD DQML DQ7 DQMH CLK CKE CAS RAS WE NC A11 A9 BA0 BA1 CS A8 A7 A6 A0 A1 A10 GND A5 A4 A3 A2 VDD PIN DESCRIPTIONS A0-A11 Row Address Input A0-A7 Column Address Input BA0, BA1 Bank Select Addresses DQ0 to DQ15Data I/O CLK System Clock Input CKE Clock Enable CS Chip Select RAS Row Address Strobe Command CAS Column Address Strobe Command Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 WE Write Enable LDQM, UDQM x16 Input/Output Mask Vdd Power GNDGround Vddq Power Supply for I/O Pin GNDQGround for I/O Pin NC No Connection 3 IS42S16400F IS45S16400F PIN CONFIGURATIONS 54 pin TSOP - Type II VDD 1 54 GND DQ0 2 53 DQ15 VDDQ 3 52 GNDQ DQ1 4 51 DQ14 DQ2 5 50 DQ13 GNDQ 6 49 VDDQ DQ3 7 48 DQ12 DQ4 8 47 DQ11 VDDQ 9 46 GNDQ DQ5 10 45 DQ10 DQ6 11 44 DQ9 GNDQ 12 43 VDDQ DQ7 13 42 DQ8 VDD 14 41 GND LDQM 15 40 NC WE 16 39 UDQM CAS 17 38 CLK RAS 18 37 CKE CS 19 36 NC BA0 20 35 A11 BA1 21 34 A9 A10 22 33 A8 A0 23 32 A7 A1 24 31 A6 A2 25 30 A5 A3 26 29 A4 VDD 27 28 GND PIN DESCRIPTIONS A0-A11 A0-A7 BA0, BA1 DQ0 to DQ15 CLK CKE CS RAS CAS 4 Row Address Input Column Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe Command Column Address Strobe Command WE LDQM UDQM Vdd GND Vddq GNDq NC Write Enable x16 Lower Byte, Input/Output Mask x16 Upper Byte, Input/Output Mask Power Ground Power Supply for I/O Pin Ground for I/O Pin No Connection Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 IS42S16400F IS45S16400F PIN FUNCTIONS Symbol A0-A11 TSOP Pin No. 23 to 26 29 to 34 22, 35 Type Input Pin BA0, BA1 20, 21 Input Pin CAS 17 Input Pin CKE 37 Input Pin CLK 38 Input Pin CS 19 Input Pin DQ0 to DQ15 2, 4, 5, 7, 8, 10, 11,13, 42, 44, 45, 47, 48, 50, 51, 53 15, 39 DQ Pin Input Pin RAS 18 Input Pin WE 16 Input Pin Vddq Vdd GNDq GND 3, 9, 43, 49 1, 14, 27 6, 12, 46, 52 28, 41, 54 Power Supply Pin Power Supply Pin Power Supply Pin Power Supply Pin LDQM, UDQM Function (In Detail) Address Inputs: A0-A11 are sampled during the ACTIVE command (row-address A0-A11) and READ/WRITE command (A0-A7 with A10 defining auto precharge) to select one location out of the memory array in the respective bank. A10 is sampled during a PRECHARGE command to determine if all banks are to be precharged (A10 HIGH) or bank selected by BA0, BA1 (LOW). The address inputs also provide the op-code during a LOAD MODE REGISTER command. Bank Select Address: BA0 and BA1 defines which bank the ACTIVE, READ, WRITE or PRECHARGE command is being applied. CAS, in conjunction with the RAS and WE, forms the device command. See the "Command Truth Table" for details on device commands. The CKE input determines whether the CLK input is enabled. The next rising edge of the CLK signal will be valid when is CKE HIGH and invalid when LOW. When CKE is LOW, the device will be in either power-down mode, clock suspend mode, or self refresh mode. CKE is an asynchronous input. CLK is the master clock input for this device. Except for CKE, all inputs to this device are acquired in synchronization with the rising edge of this pin. The CS input determines whether command input is enabled within the device. Command input is enabled when CS is LOW, and disabled with CS is HIGH. The device remains in the previous state when CS is HIGH. DQ0 to DQ15 are I/O pins. I/O through these pins can be controlled in byte units using the LDQM and UDQM pins. LDQM and UDQM control the lower and upper bytes of the I/O buffers. In read mode, LDQM and UDQM control the output buffer. When LDQM or UDQM is LOW, the corresponding buffer byte is enabled, and when HIGH, disabled. The outputs go to the HIGH impedance state when LDQM/UDQM is HIGH. This function corresponds to OE in conventional DRAMs. In write mode, LDQM and UDQM control the input buffer. When LDQM or UDQM is LOW, the corresponding buffer byte is enabled, and data can be written to the device. When LDQM or UDQM is HIGH, input data is masked and cannot be written to the device. RAS, in conjunction with CAS and WE, forms the device command. See the "Command Truth Table" item for details on device commands. WE, in conjunction with RAS and CAS, forms the device command. See the "Command Truth Table" item for details on device commands. Vddq is the output buffer power supply. Vdd is the device internal power supply. GNDq is the output buffer ground. GND is the device internal ground. Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 5 IS42S16400F IS45S16400F READ The READ command selects the bank from BA0, BA1 inputs and starts a burst read access to an active row. Inputs A0-A7 provides the starting column location. When A10 is HIGH, this command functions as an AUTO PRECHARGE command. When the auto precharge is selected, the row being accessed will be precharged at the end of the READ burst. The row will remain open for subsequent accesses when AUTO PRECHARGE is not selected. DQ's read data is subject to the logic level on the DQM inputs two clocks earlier. When a given DQM signal was registered HIGH, the corresponding DQ's will be High-Z two clocks later. DQ's will provide valid data when the DQM signal was registered LOW. WRITE A burst write access to an active row is initiated with the WRITE command. BA0, BA1 inputs selects the bank, and the starting column location is provided by inputs A0-A7. Whether or not AUTO-PRECHARGE is used is determined by A10. The row being accessed will be precharged at the end of the WRITE burst, if AUTO PRECHARGE is selected. If AUTO PRECHARGE is not selected, the row will remain open for subsequent accesses. A memory array is written with corresponding input data on DQ's and DQM input logic level appearing at the same time. Data will be written to memory when DQM signal is LOW. When DQM is HIGH, the corresponding data inputs will be ignored, and a WRITE will not be executed to that byte/column location. PRECHARGE The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. BA0, BA1 can be used to select which bank is precharged or they are treated as "Don't Care". A10 determines whether one or all banks are precharged. After executing this command, the next command for the selected bank(s) is executed after passage of the period tRP, which is the period required for bank precharging. Once a bank has been precharged, it is in the idle state and must be activated prior to any READ or WRITE commands being issued to that bank. AUTO PRECHARGE The AUTO PRECHARGE function ensures that the precharge is initiated at the earliest valid stage within a burst. This function allows for individual-bank precharge without requiring an explicit command. A10 can be used to enable the AUTO PRECHARGE function in conjunction with a specific READ or WRITE command. For each individual READ or WRITE command, auto precharge is 6 either enabled or disabled. AUTO PRECHARGE does not apply except in full-page burst mode. Upon completion of the READ or WRITE burst, a precharge of the bank/row that is addressed is automatically performed. AUTO REFRESH COMMAND This command executes the AUTO REFRESH operation. The row address and bank to be refreshed are automatically generated during this operation. The stipulated period (trc) is required for a single refresh operation, and no other commands can be executed during this period. This command is executed at least 4096 times every Tref. During an AUTO REFRESH command, address bits are "Don't Care". This command corresponds to CBR Auto-refresh. SELF REFRESH During the SELF REFRESH operation, the row address to be refreshed, the bank, and the refresh interval are generated automatically internally. SELF REFRESH can be used to retain data in the SDRAM without external clocking, even if the rest of the system is powered down. The SELF REFRESH operation is started by dropping the CKE pin from HIGH to LOW. During the SELF REFRESH operation all other inputs to the SDRAM become "Don't Care". The device must remain in self refresh mode for a minimum period equal to tras or may remain in self refresh mode for an indefinite period beyond that. The SELF-REFRESH operation continues as long as the CKE pin remains LOW and there is no need for external control of any other pins. The next command cannot be executed until the device internal recovery period (trc) has elapsed. Once CKE goes HIGH, the NOP command must be issued (minimum of two clocks) to provide time for the completion of any internal refresh in progress. After the self-refresh, since it is impossible to determine the address of the last row to be refreshed, an AUTO-REFRESH should immediately be performed for all addresses. BURST TERMINATE The BURST TERMINATE command forcibly terminates the burst read and write operations by truncating either fixed-length or full-page bursts and the most recently registered READ or WRITE command prior to the BURST TERMINATE. COMMAND INHIBIT COMMAND INHIBIT prevents new commands from being executed. Operations in progress are not affected, apart from whether the CLK signal is enabled NO OPERATION When CS is low, the NOP command prevents unwanted commands from being registered during idle or wait states. Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 IS42S16400F IS45S16400F LOAD MODE REGISTER During the LOAD MODE REGISTER command the mode register is loaded from A0-A11. This command can only be issued when all banks are idle. ACTIVE COMMAND When the ACTIVE COMMAND is activated, BA0, BA1 inputs selects a bank to be accessed, and the address inputs on A0-A11 selects the row. Until a PRECHARGE command is issued to the bank, the row remains open for accesses. Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 7 IS42S16400F IS45S16400F TRUTH TABLE - COMMANDS AND DQM OPERATION(1) FUNCTION COMMAND INHIBIT (NOP) NO OPERATION (NOP) ACTIVE (Select bank and activate row)(3) READ (Select bank/column, start READ burst)(4) WRITE (Select bank/column, start WRITE burst)(4) BURST TERMINATE PRECHARGE (Deactivate row in bank or banks)(5) AUTO REFRESH or SELF REFRESH(6,7) (Enter self refresh mode) LOAD MODE REGISTER(2) Write Enable/Output Enable(8) Write Inhibit/Output High-Z(8) CS H L L L L L L L RAS X H L H H H L L CAS X H H L L H H L WE X H H H L L L H DQM X X X L/H(8) L/H(8) X X X ADDR X X Bank/Row Bank/Col Bank/Col X Code X DQs X X X X Valid Active X X L -- L -- L -- L -- X L Op-Code -- X Active -- -- -- -- H -- High-Z NOTES: 1. CKE is HIGH for all commands except SELF REFRESH. 2. A0-A11 define the op-code written to the mode register. 3. A0-A11 provide row address, and BA0, BA1 determine which bank is made active. 4. A0-A7 (x16) provide column address; A10 HIGH enables the auto precharge feature (nonpersistent), while A10 LOW disables auto precharge; BA0, BA1 determine which bank is being read from or written to. 5. A10 LOW: BA0, BA1 determine the bank being precharged. A10 HIGH: All banks precharged and BA0, BA1 are "Don't Care." 6. AUTO REFRESH if CKE is HIGH, SELF REFRESH if CKE is LOW. 7. Internal refresh counter controls row addressing; all inputs and I/Os are "Don't Care" except for CKE. 8. Activates or deactivates the DQs during WRITEs (zero-clock delay) and READs (two-clock delay). 8 Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 IS42S16400F IS45S16400F TRUTH TABLE - CKE (1-4) CURRENT STATE Power-Down Self Refresh Clock Suspend Power-Down(5) Self Refresh(6) Clock Suspend(7) All Banks Idle All Banks Idle Reading or Writing COMMANDn X X X COMMAND INHIBIT or NOP COMMAND INHIBIT or NOP X COMMAND INHIBIT or NOP AUTO REFRESH VALID ACTIONn Maintain Power-Down Maintain Self Refresh Maintain Clock Suspend Exit Power-Down Exit Self Refresh Exit Clock Suspend Power-Down Entry Self Refresh Entry Clock Suspend Entry See TRUTH TABLE - CURRENT STATE BANK n, COMMAND TO BANK n CKEn-1 L L L L L L H H H CKEn L L L H H H L L L H H NOTES: 1. CKEn is the logic state of CKE at clock edge n; CKEn-1 was the state of CKE at the previous clock edge. 2. Current state is the state of the SDRAM immediately prior to clock edge n. 3. COMMANDn is the command registered at clock edge n, and ACTONn is a result of COMMANDn. 4. All states and sequences not shown are illegal or reserved. 5. Exiting power-down at clock edge n will put the device in the all banks idle state in time for clock edge n+1 (provided that tcks is met). 6. Exiting self refresh at clock edge n will put the device in all banks idle state once txsr is met. COMMAND INHIBIT or NOP commands should be issued on clock edges occurring during the txsr period. A minimum of two NOP commands must be sent during txsr period. 7. After exiting clock suspend at clock edge n, the device will resume operation and recognize the next command at clock edge n+1. TRUTH TABLE - CURRENT STATE BANK n, COMMAND TO BANK n (1-6) CURRENT STATE Any Idle Row Active Read (Auto Precharge Disabled) Write (Auto Precharge Disabled) COMMAND (ACTION) COMMAND INHIBIT (NOP/Continue previous operation) NO OPERATION (NOP/Continue previous operation) ACTIVE (Select and activate row) AUTO REFRESH(7) LOAD MODE REGISTER(7) PRECHARGE(11) READ (Select column and start READ burst)(10) WRITE (Select column and start WRITE burst)(10) PRECHARGE (Deactivate row in bank or banks)(8) READ (Select column and start new READ burst)(10) WRITE (Select column and start WRITE burst)(10) PRECHARGE (Truncate READ burst, start PRECHARGE)(8) BURST TERMINATE(9) READ (Select column and start READ burst)(10) WRITE (Select column and start new WRITE burst)(10) PRECHARGE (Truncate WRITE burst, start PRECHARGE)(8) BURST TERMINATE(9) CS RAS CAS WE H X X X L H H H L L H H L L L H L L L L L L H L L H L H L H L L L L H L L H L H L H L L L L H L L H H L L H L H L H L L L L H L L H H L NOTE: 1. This table applies when CKE n-1 was HIGH and CKE n is HIGH (see Truth Table - CKE) and after txsr has been met (if the previous state was self refresh). 2. This table is bank-specific, except where noted; i.e., the current state is for a specific bank and the commands shown are those allowed to be issued to that bank when in that state. Exceptions are covered in the notes below. Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 9 IS42S16400F IS45S16400F 3. Current state definitions: Idle: The bank has been precharged, and trp has been met. Row Active: A row in the bank has been activated, and trcd has been met. No data bursts/accesses and no register accesses are in progress. Read: A READ burst has been initiated, with auto precharge disabled, and has not yet terminated or been terminated. Write: A WRITE burst has been initiated, with auto precharge disabled, and has not yet terminated or been terminated. 4. The following states must not be interrupted by a command issued to the same bank. COMMAND INHIBIT or NOP commands, or allowable commands to the other bank should be issued on any clock edge occurring during these states. Allowable commands to the other bank are determined by its current state and CURRENT STATE BANK n truth tables. Precharging: Starts with registration of a PRECHARGE command and ends when trp is met. Once trp is met, the bank will be in the idle state. Row Activating: Starts with registration of an ACTIVE command and ends when trcd is met. Once trcd is met, the bank will be in the row active state. Read w/Auto Precharge Enabled: Starts with registration of a READ command with auto precharge enabled and ends when trp has been met. Once trp is met, the bank will be in the idle state. Write w/Auto Precharge Enabled: Starts with registration of a WRITE command with auto precharge enabled and ends when trp has been met. Once trp is met, the bank will be in the idle state. 5. The following states must not be interrupted by any executable command; COMMAND INHIBIT or NOP commands must be applied on each positive clock edge during these states. Refreshing: Starts with registration of an AUTO REFRESH command and ends when trc is met. Once trc is met, the SDRAM will be in the all banks idle state. Accessing Mode Register: Starts with registration of a LOAD MODE REGISTER command and ends when tmrd has been met. Once tmrd is met, the SDRAM will be in the all banks idle state. Precharging All: Starts with registration of a PRECHARGE ALL command and ends when trp is met. Once trp is met, all banks will be in the idle state. 6. All states and sequences not shown are illegal or reserved. 7. Not bank-specific; requires that all banks are idle. 8. May or may not be bank-specific; if all banks are to be precharged, all must be in a valid state for precharging. 9. Not bank-specific; BURST TERMINATE affects the most recent READ or WRITE burst, regardless of bank. 10. READs or WRITEs listed in the Command (Action) column include READs or WRITEs with auto precharge enabled and READs or WRITEs with auto precharge disabled. 11. Does not affect the state of the bank and acts as a NOP to that bank. 10 Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 IS42S16400F IS45S16400F TRUTH TABLE - CURRENT STATE BANK n, COMMAND TO BANK m (1-6) CURRENT STATE Any Idle Row Activating, Active, or Precharging Read (Auto Precharge Disabled) Write (Auto Precharge Disabled) Read (With Auto Precharge) Write (With Auto Precharge) COMMAND (ACTION) COMMAND INHIBIT (NOP/Continue previous operation) NO OPERATION (NOP/Continue previous operation) Any Command Otherwise Allowed to Bank m ACTIVE (Select and activate row) READ (Select column and start READ burst)(7) WRITE (Select column and start WRITE burst)(7) PRECHARGE ACTIVE (Select and activate row) READ (Select column and start new READ burst)(7,10) WRITE (Select column and start WRITE burst)(7,11) PRECHARGE(9) ACTIVE (Select and activate row) READ (Select column and start READ burst)(7,12) WRITE (Select column and start new WRITE burst) PRECHARGE(9) ACTIVE (Select and activate row) READ (Select column and start new READ burst)(7,8,14) WRITE (Select column and start WRITE burst)(7,8,15) PRECHARGE(9) ACTIVE (Select and activate row) READ (Select column and start READ burst)(7,8,16) WRITE (Select column and start new WRITE burst)(7,8,17) PRECHARGE(9) (7,13) CS RAS CAS WE H X X X L H H H X X X X L L H H L H L H L H L L L L H L L L H H L H L H L H L L L L H L L L H H L L L L L L L L L L L H H L L H H L L H H L L L H H L L H H L L H H L L H H L L H H L L NOTE: 1. This table applies when CKE n-1 was HIGH and CKE n is HIGH (Truth Table - CKE) and after txsr has been met (if the previous state was self refresh). 2. This table describes alternate bank operation, except where noted; i.e., the current state is for bank n and the commands shown are those allowed to be issued to bank m (assuming that bank m is in such a state that the given command is allowable). Exceptions are covered in the notes below. 3. Current state definitions: Idle: The bank has been precharged, and trp has been met. Row Active: A row in the bank has been activated, and trcd has been met. No data bursts/accesses and no register accesses are in progress. Read: A READ burst has been initiated, with auto precharge disabled, and has not yet terminated or been terminated. Write: A WRITE burst has been initiated, with auto precharge disabled, and has not yet terminated or been terminated. Read w/Auto Precharge Enabled: Starts with registration of a READ command with auto precharge enabled, and ends when trp has been met. Once trp is met, the bank will be in the idle state. Write w/Auto Precharge Enabled: Starts with registration of a WRITE command with auto precharge enabled, and ends when trp has been met. Once trp is met, the bank will be in the idle state. 4. AUTO REFRESH, SELF REFRESH and LOAD MODE REGISTER commands may only be issued when all banks are idle. 5. A BURST TERMINATE command cannot be issued to another bank; it applies to the bank represented by the current state only. 6. All states and sequences not shown are illegal or reserved. 7. READs or WRITEs to bank m listed in the Command (Action) column include READs or WRITEs with auto precharge enabled and READs or WRITEs with auto precharge disabled. Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 11 IS42S16400F IS45S16400F 8. CONCURRENT AUTO PRECHARGE: Bank n will initiate the AUTO PRECHARGE command when its burst has been interrupted by bank m's burst. 9. Burst in bank n continues as initiated. 10. For a READ without auto precharge interrupted by a READ (with or without auto precharge), the READ to bank m will interrupt the READ on bank n, CAS latency later (Consecutive READ Bursts). 11. For a READ without auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank m will interrupt the READ on bank n when registered (READ to WRITE). DQM should be used one clock prior to the WRITE command to prevent bus contention. 12. For a WRITE without auto precharge interrupted by a READ (with or without auto precharge), the READ to bank m will interrupt the WRITE on bank n when registered (WRITE to READ), with the data-out appearing CAS latency later. The last valid WRITE to bank n will be data-in registered one clock prior to the READ to bank m. 13. For a WRITE without auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank m will interrupt the WRITE on bank n when registered (WRITE to WRITE). The last valid WRITE to bank n will be data-in registered one clock prior to the READ to bank m. 14. For a READ with auto precharge interrupted by a READ (with or without auto precharge), the READ to bank m will interrupt the READ on bank n, CAS latency later. The PRECHARGE to bank n will begin when the READ to bank m is registered (Fig CAP 1). 15. For a READ with auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank m will interrupt the READ on bank n when registered. DQM should be used two clocks prior to the WRITE command to prevent bus contention. The PRECHARGE to bank n will begin when the WRITE to bank m is registered (Fig CAP 2). 16. For a WRITE with auto precharge interrupted by a READ (with or without auto precharge), the READ to bank m will interrupt the WRITE on bank n when registered, with the data-out appearing CAS latency later. The PRECHARGE to bank n will begin after tWR is met, where twr begins when the READ to bank m is registered. The last valid WRITE to bank n will be data-in registered one clock prior to the READ to bank m (Fig CAP 3). 17. For a WRITE with auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank m will interrupt the WRITE on bank n when registered. The PRECHARGE to bank n will begin after twr is met, where t WR begins when the WRITE to bank m is registered. The last valid WRITE to bank n will be data registered one clock prior to the WRITE to bank m (Fig CAP 4). 12 Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 IS42S16400F IS45S16400F ABSOLUTE MAXIMUM RATINGS(1) Symbol Parameters VDD max Maximum Supply Voltage VDDq max Maximum Supply Voltage for Output Buffer Vin Input Voltage Vout Output Voltage Pd max Allowable Power Dissipation IcsOutput Shorted Current Topr Operating Temperature Com. Ind. A1 A2 Tstg Storage Temperature Rating -1.0 to +4.6 -1.0 to +4.6 -1.0 to Vddq + 0.5 -1.0 to Vddq + 0.5 1 50 0 to +70 -40 to +85 -40 to +85 -40 to +105 -65 to +150 Unit V V V V W mA C C C C C DC RECOMMENDED OPERATING CONDITIONS(2) (At Ta = 0 to +70C for commercial grade. Ta = -40 to +85C for industrial and A1 grade. Ta = -40 to +105C for A2 grade) Symbol VDD, VDDq Vih Vil Parameter Supply Voltage Input High Voltage(3) Input Low Voltage(4) Min. 3.0 2.0 -0.3 Typ. 3.3 -- -- Max. 3.6 Vdd + 0.3 +0.8 Unit V V V CAPACITANCE CHARACTERISTICS(1,2) (At Ta = 0 to +25C, Vdd = Vddq = 3.3 0.3V, f = 1 MHz) Symbol Cin Cclk CI/O Parameter Input Capacitance: Address and Control Input Capacitance: (CLK) Data Input/Output Capacitance: I/O0-I/O15 Typ. -- -- -- Max. 3.8 3.5 6.5 Unit pF pF pF Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. All voltages are referenced to GND. 3. Vih(max) = Vddq + 1.2V with a pulse width < 3ns. 4. Vil(min) = GND - 1.2V with a pulse width < 3ns. 5. This parameter is characterized. Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 13 IS42S16400F IS45S16400F DC ELECTRICAL CHARACTERISTICS (Recommended Operation Conditions unless otherwise noted.) Symbol Iil Iol Voh Vol Icc1 Icc2p Icc2ps Icc2n(3) Icc2ns Icc3p Icc3ps Icc3n(3) Icc3ns Icc4 Icc5 Icc6 Parameter Input Leakage Current Test Condition Speed 0V Vin Vdd, with pins other than the tested pin at 0V Output Leakage Current Output is disabled, 0V Vout Vdd Output High Voltage Level Iout = -2 mA Output Low Voltage Level Iout = +2 mA (1,2) Operating Current One Bank Operation, CAS latency = 3 Com. -5 Burst Length=1 Com. -6 trc trc (min.) Com. -7 Iout = 0mA A1, Ind. -5/-6 A1, A2, Ind. -7 Precharge Standby Current CKE Vil (max) tck = 15ns Com. -- A1, A2, Ind. -- (In Power-Down Mode) tck = Com. -- A1, A2, Ind. -- Precharge Standby Current CKE Vih (min) tck = 15ns -- (In Non Power-Down Mode) tck = Com. -- A1, A2, Ind. -- Active Standby Current CKE Vil (max) tck = 15ns Com. -- A1, A2, Ind. -- (In Power-Down Mode) tck = Com. -- A1, A2, Ind. -- Active Standby Current CKE Vih (min) tck = 15ns -- (In Non Power-Down Mode) tck = Com. -- A1, A2, Ind. -- Operating Current tck = tck (min) CAS latency = 3 Com. -5 (In Burst Mode)(1) Iout = 0mA Com. -6 BL = 4; 4 banks activated Com. -7 A1, Ind. -5/-6 A1, A2, Ind. -7 Auto-Refresh Current trc = trc (min) CAS latency = 3 Com. -5 tclk = tclk (min) Com. -6 Com. -7 A1, Ind. -5/-6 A1, A2, Ind. -7 Self-Refresh Current CKE 0.2V -- Min. -5 Max. 5 Unit A -5 2.4 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 5 -- 0.4 110 95 85 155 145 2 4 2 3 20 15 15 7 7 5 5 30 25 25 140 130 100 140 110 160 150 130 170 150 2 A V V mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA Notes: 1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time increases. Also note that a bypass capacitor of at least 0.01 F should be inserted between Vdd and GND for each memory chip to suppress power supply voltage noise (voltage drops) due to these transient currents. 2. Icc1 and Icc4 depend on the output load. The maximum values for Icc1 and Icc4 are obtained with the output open state. 3. Input signal chnage once per 30ns. 14 Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 IS42S16400F IS45S16400F AC ELECTRICAL CHARACTERISTICS (1,2,3) -5 Symbol tck3 tck2 tac3 tac2 tch tcl toh3 toh2 tlz thz3 thz2 tds tdh tas tah tcks tckh tcka tcms tcmh trc tras trp trcd trrd tdpl or twr tdal tt txsr tref Parameter Clock Cycle Time CAS Latency = 3 CAS Latency = 2 (4,6) Access Time From CLK CAS Latency = 3 CAS Latency = 2 CLK HIGH Level Width CLK LOW Level Width Output Data Hold Time(6) CAS Latency = 3 CAS Latency = 2 Output LOW Impedance Time Output HIGH Impedance Time(5) CAS Latency = 3 CAS Latency = 2 Input Data Setup Time Input Data Hold Time Address Setup Time Address Hold Time CKE Setup Time CKE Hold Time CKE to CLK Recovery Delay Time Command Setup Time (CS, RAS, CAS, WE, DQM) Command Hold Time (CS, RAS, CAS, WE, DQM) Command Period (REF to REF / ACT to ACT) Command Period (ACT to PRE) Command Period (PRE to ACT) Active Command To Read / Write Command Delay Time Command Period (ACT [0] to ACT[1]) Input Data To Precharge CAS Latency = 3 Command Delay time CAS Latency = 2 Input Data To Active / Refresh CAS Latency = 3 Command Delay time (During Auto-Precharge) CAS Latency = 2 Transition Time Exit to Self-Refresh to Active Time Refresh Cycle Time (4096) Ta 70oC Com., Ind., A1, A2 Ta 85oC Ind., A1, A2 Ta > 85oC A2 -6 -7 Min. Max. 5 -- 7.5 -- -- 5 -- 6 2 -- 2 -- 2.5 -- 2.5 -- 0 -- -- 5 -- 6 1.5 -- 0.8 -- 1.5 -- 0.8 -- 1.5 -- 0.8 -- 1CLK+3 -- 1.5 -- 0.8 -- 55 -- 40 100,000 15 -- 15 -- 10 -- 2CLK -- Min. Max. 6 -- 7.5 -- -- 5.4 -- 6 2 -- 2 -- 2.5 -- 2.5 -- 0 -- -- 5.4 -- 6 1.5 -- 0.8 -- 1.5 -- 0.8 -- 1.5 -- 0.8 -- 1CLK+3 -- 1.5 -- 0.8 -- 60 -- 42 100,000 18 -- 18 -- 12 -- 2CLK -- Min. Max. 7 -- 7.5 -- -- 5.4 -- 6 2.5 -- 2.5 -- 2.7 -- 2.7 -- 0 -- -- 5.4 -- 6 1.5 -- 0.8 -- 1.5 -- 0.8 -- 1.5 -- 0.8 -- 1CLK+3 -- 1.5 -- 0.8 -- 63 -- 42 100,000 20 -- 20 -- 14 -- 2CLK -- Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 2CLK 2CLK+trp -- -- 2CLK 2CLK+trp -- -- 2CLK 2CLK+trp -- -- ns ns 2CLK+trp 0.3 60 -- 1.2 -- 2CLK+trp 0.3 66 -- 1.2 -- 2CLK+trp 0.3 70 -- 1.2 -- ns ns ns -- -- -- 64 64 -- -- -- -- 64 64 -- -- -- -- 64 64 16 ms ms ms Notes: 1. When power is first applied, memory operation should be started 200 s after Vdd and Vddq reach their stipulated voltages. Also note that the power-on sequence must be executed before starting memory operation. 2. Measured with tt = 1 ns. 3. The reference level is 1.4 V when measuring input signal timing. Rise and fall times are measured between Vih (min.) and Vil (max.). 4. Access time is measured at 1.4V with the load shown in the figure below. 5. The time thz (max.) is defined as the time required for the output voltage to transition by 200 mV from Voh (min.) or Vol (max.) when the output is in the high impedance state. 6. If clock rising time is longer than 1ns, tt/2 - 0.5ns should be added to the parameter. Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 15 IS42S16400F IS45S16400F OPERATING FREQUENCY / LATENCY RELATIONSHIPS Symbol Parameter -- Clock Cycle Time CL=3 CL=2 -- Operating Frequency CL=3 CL=2 tccd READ/WRITE command to READ/WRITE command tcked CKE to clock disable or power-down entry mode tped CKE to clock enable or power-down exit setup mode tdqd DQM to input data delay tdqm DQM to data mask during WRITEs tdqz DQM to data high-impedance during READs tdwd WRITE command to input data delay tdal Data-in to ACTIVE command CL=3 CL=2 tdpl Data-in to PRECHARGE command tbdl Last data-in to burst STOP command tcdl Last data-in to new READ/WRITE command trdl Last data-in to PRECHARGE command tmrd LOAD MODE REGISTER command to ACTIVE or REFRESH command troh Data-out to high-impedance from CL=3 PRECHARGE command CL=2 -5 5 7.5 200 133 1 1 1 0 0 2 0 -6 6 7.5 166 133 1 1 1 0 0 2 0 -7 7 7.5 143 133 1 1 1 0 0 2 0 Units ns ns MHz MH cycle cycle cycle cycle cycle cycle cycle 5 4 2 1 1 2 2 5 5 2 1 1 2 2 5 5 2 1 1 2 2 cycle cycle cycle cycle cycle cycle cycle 3 2 3 2 3 2 cycle cycle AC TEST CONDITIONS (Input/Output Reference Level: 1.4V) Input Load Output Load tCK tCL tCH 3.0V 50 CLK 1.4V 0V I/O tCMS tCMH +1.4V 50 pF 3.0V INPUT 1.4V 0V tAC tOH OUTPUT 16 1.4V 1.4V Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 IS42S16400F IS45S16400F FUNCTIONAL DESCRIPTION Initialization The 64Mb SDRAMs (1 Meg x 16 x 4 banks) are quad-bank DRAMs which operate at 3.3V and include a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 16,777,216-bit banks is organized as 4,096 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed (BA0 and BA1 select the bank, A0-A11 select the row).The address bits (A0-A7) registered coincident with the READ or WRITE command are used to select the starting column location for the burst access. Prior to normal operation, the SDRAM must be initialized. The following sections provide detailed information covering device initialization, register definition, command descriptions and device operation. SDRAMs must be powered up and initialized in a predefined manner. The 64Mb SDRAM is initialized after the power is applied to Vdd and Vddq (simultaneously), and the clock is stable with DQM High and CKE High. A 100s delay is required prior to issuing any command other than a COMMAND INHIBIT or a NOP. The COMMAND INHIBIT or NOP may be applied during the 100s period and continue should at least through the end of the period. With at least one COMMAND INHIBIT or NOP command having been applied, a PRECHARGE command should be applied once the 100s delay has been satisfied. All banks must be precharged. This will leave all banks in an idle state, after which at least two AUTO REFRESH cycles must be performed. After the AUTO REFRESH cycles are complete, the SDRAM is then ready for mode register programming. The mode register should be loaded prior to applying any operational command because it will power up in an unknown state. After the Load Mode Register command, at least one NOP command must be asserted prior to any command. Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 17 IS42S16400F IS45S16400F Register Definition Mode Register Mode register bits M0-M2 specify the burst length, M3 specifies the type of burst (sequential or interleaved), M4- M6 specify the CAS latency, M7 and M8 specify the operating mode, M9 specifies the WRITE burst mode, and M10 and M11 are reserved for future use. The mode register must be loaded when all banks are idle, and the controller must wait the specified time before initiating the subsequent operation.Violating either of these requirements will result in unspecified operation. The mode register is used to define the specific mode of operation of the SDRAM. This definition includes the selection of a burst length, a burst type, a CAS latency, an operating mode and a write burst mode, as shown in MODE REGISTER DEFINITION. The mode register is programmed via the LOAD MODE REGISTER command and will retain the stored information until it is programmed again or the device loses power. MODE REGISTER DEFINITION A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address Bus Mode Register (Mx) Burst Length (1) Reserved M2 M1 M0 M3=0 M3=1 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 1 2 4 8 Reserved Reserved Reserved Full Page 1 2 4 8 Reserved Reserved Reserved Reserved Burst Type M3 Type 0 1 Sequential Interleaved Latency Mode M6 M5 M4 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 CAS Latency Reserved Reserved 2 3 Reserved Reserved Reserved Reserved Operating Mode M8 M7 M6-M0 Mode 0 0 -- -- Defined -- Standard Operation All Other States Reserved Write Burst Mode M9 0 1 18 Mode Programmed Burst Length Single Location Access 1. To ensure compatibility with future devices, should program M11, M10 = "0, 0" Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 IS42S16400F IS45S16400F Burst Length Read and write accesses to the SDRAM are burst oriented, with the burst length being programmable, as shown in MODE REGISTER DEFINITION. The burst length determines the maximum number of column locations that can be accessed for a given READ or WRITE command. Burst lengths of 1, 2, 4 or 8 locations are available for both the sequential and the interleaved burst types, and a full-page burst is available for the sequential type. The full-page burst is used in conjunction with the BURST TERMINATE command to generate arbitrary burst lengths. Reserved states should not be used, as unknown operation or incompatibility with future versions may result. When a READ or WRITE command is issued, a block of columns equal to the burst length is effectively selected. All accesses for that burst take place within this block, mean- ing that the burst will wrap within the block if a boundary is reached. The block is uniquely selected by A1-A7 (x16) when the burst length is set to two; by A2-A7 (x16) when the burst length is set to four; and by A3-A7 (x16) when the burst length is set to eight. The remaining (least significant) address bit(s) is (are) used to select the starting location within the block. Full-page bursts wrap within the page if the boundary is reached. Burst Type Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the burst type and is selected via bit M3. The ordering of accesses within a burst is determined by the burst length, the burst type and the starting column address, as shown in BURST DEFINITION table. Burst Definition BurstStarting Column Order of Accesses Within a Burst Length Address Type = Sequential Type = Interleaved A0 2 0 0-1 0-1 1 1-0 1-0 A1 A0 0 0 0-1-2-3 0-1-2-3 4 0 1 1-2-3-0 1-0-3-2 1 0 2-3-0-1 2-3-0-1 1 1 3-0-1-2 3-2-1-0 A2 A1 A0 0 0 0 0-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7 0 0 1 1-2-3-4-5-6-7-0 1-0-3-2-5-4-7-6 0 1 0 2-3-4-5-6-7-0-1 2-3-0-1-6-7-4-5 8 0 1 1 3-4-5-6-7-0-1-2 3-2-1-0-7-6-5-4 1 0 0 4-5-6-7-0-1-2-3 4-5-6-7-0-1-2-3 1 0 1 5-6-7-0-1-2-3-4 5-4-7-6-1-0-3-2 1 1 0 6-7-0-1-2-3-4-5 6-7-4-5-2-3-0-1 1 1 1 7-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0 Full n = A0-A7 Cn, Cn + 1, Cn + 2 Not Supported Page Cn + 3, Cn + 4... (y) (location 0-y) ...Cn - 1, Cn... Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 19 IS42S16400F IS45S16400F CAS Latency Operating Mode The CAS latency is the delay, in clock cycles, between the registration of a READ command and the availability of the first piece of output data. The latency can be set to two or three clocks. If a READ command is registered at clock edge n, and the latency is m clocks, the data will be available by clock edge n + m. The DQs will start driving as a result of the clock edge one cycle earlier (n + m - 1), and provided that the relevant access times are met, the data will be valid by clock edge n + m. For example, assuming that the clock cycle time is such that all relevant access times are met, if a READ command is registered at T0 and the latency is programmed to two clocks, the DQs will start driving after T1 and the data will be valid by T2, as shown in CAS Latency diagrams. The Allowable Operating Frequency table indicates the operating frequencies at which each CAS latency setting can be used. Reserved states should not be used as unknown operation or incompatibility with future versions may result. The normal operating mode is selected by setting M7 and M8 to zero; the other combinations of values for M7 and M8 are reserved for future use and/or test modes. The programmed burst length applies to both READ and WRITE bursts. Test modes and reserved states should not be used because unknown operation or incompatibility with future versions may result. Write Burst Mode When M9 = 0, the burst length programmed via M0-M2 applies to both READ and WRITE bursts; when M9 = 1, the programmed burst length applies to READ bursts, but write accesses are single-location (nonburst) accesses. CAS Latency Allowable Operating Frequency (MHz) Speed CAS Latency = 2 5 133 6133 7 133 CAS Latency = 3 200 166 143 CAS Latency T0 T1 T2 T3 READ NOP NOP CLK COMMAND tAC DOUT DQ tOH tLZ CAS Latency - 2 T0 T1 T2 T3 T4 READ NOP NOP NOP CLK COMMAND tAC DOUT DQ tLZ tOH CAS Latency - 3 DON'T CARE UNDEFINED 20 Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 IS42S16400F IS45S16400F Operation Activating Specific Row Within Specific Bank BANK/ROW ACTIVATION Before any READ or WRITE commands can be issued to a bank within the SDRAM, a row in that bank must be "opened." This is accomplished via the ACTIVE command, which selects both the bank and the row to be activated (see Activating Specific Row Within Specific Bank). After opening a row (issuing an ACTIVE command), a READ or WRITE command may be issued to that row, subject to the trcd specification. Minimum trcd should be divided by the clock period and rounded up to the next whole number to determine the earliest clock edge after the ACTIVE command on which a READ or WRITE command can be entered. For example, a trcd specification of 20ns with a 125 MHz clock (8ns period) results in 2.5 clocks, rounded to 3. This is reflected in the following example, which covers any case where 2 < [trcd (MIN)/tck] 3. (The same procedure is used to convert other specification limits from time units to clock cycles). A subsequent ACTIVE command to a different row in the same bank can only be issued after the previous active row has been "closed" (precharged). The minimum time interval between successive ACTIVE commands to the same bank is defined by trc. CLK CKE HIGH CS RAS CAS WE A0-A11 ROW ADDRESS BA0, BA1 BANK ADDRESS A subsequent ACTIVE command to another bank can be issued while the first bank is being accessed, which results in a reduction of total row-access overhead. The minimum time interval between successive ACTIVE commands to different banks is defined by trrd. Example: Meeting trcd (MIN) when 2 < [trcd (min)/tck] 3 T0 T1 T2 ACTIVE NOP NOP T3 T4 CLK COMMAND READ or WRITE tRCD DON'T CARE Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 21 IS42S16400F IS45S16400F READs READ bursts are initiated with a READ command, as shown in the READ COMMAND diagram. The starting column and bank addresses are provided with the READ command, and auto precharge is either enabled or disabled for that burst access. If auto precharge is enabled, the row being accessed is precharged at the completion of the burst. For the generic READ commands used in the following illustrations, auto precharge is disabled. During READ bursts, the valid data-out element from the starting column address will be available following the CAS latency after the READ command. Each subsequent data-out element will be valid by the next positive clock edge. The CAS Latency diagram shows general timing for each possible CAS latency setting. Upon completion of a burst, assuming no other commands have been initiated, the DQs will go High-Z. A full-page burst will continue until terminated. (At the end of the page, it will wrap to column 0 and continue.) Data from any READ burst may be truncated with a subsequent READ command, and data from a fixed-length READ burst may be immediately followed by data from a READ command. In either case, a continuous flow of data can be maintained. The first data element from the new burst follows either the last element of a completed burst or the last desired data element of a longer burst which is being truncated. The new READ command should be issued x cycles before the clock edge at which the last desired data element is valid, where x equals the CAS latency minus one. This is shown in Consecutive READ Bursts for CAS latencies of two and three; data element n + 3 is either the last of a burst of four or the last desired of a longer burst. The 64Mb SDRAM uses a pipelined architecture and therefore does not require the 2n rule associated with a prefetch architecture. A READ command can be initiated on any clock cycle following a previous READ command. Full-speed random read accesses can be performed to the same bank, as shown in Random READ Accesses, or each subsequent READ may be performed to a different bank. Data from any READ burst may be truncated with a subsequent WRITE command, and data from a fixed-length READ burst may be immediately followed by data from a WRITE command (subject to bus turnaround limitations). The WRITE burst may be initiated on the clock edge immediately following the last (or last desired) data element from the READ burst, provided that I/O contention can be avoided. In a given system design, there may be a possibility that the device driving the input data will go Low-Z before the SDRAM DQs go High-Z. In this case, at least a single-cycle delay should occur between the last read data and the WRITE command. 22 READ COMMAND CLK CKE HIGH CS RAS CAS WE A0-A7 COLUMN ADDRESS A8, A9, A11 AUTO PRECHARGE A10 NO PRECHARGE BA0, BA1 BANK ADDRESS The DQM input is used to avoid I/O contention, as shown in Figures RW1 and RW2. The DQM signal must be asserted (HIGH) at least three clocks prior to the WRITE command (DQM latency is two clocks for output buffers) to suppress data-out from the READ. Once the WRITE command is registered, the DQs will go High-Z (or remain High-Z), regardless of the state of the DQM signal, provided the DQM was active on the clock just prior to the WRITE command that truncated the READ command. If not, the second WRITE will be an invalid WRITE. For example, if DQM was LOW during T4 in Figure RW2, then the WRITEs at T5 and T7 would be valid, while the WRITE at T6 would be invalid. The DQM signal must be de-asserted prior to the WRITE command (DQM latency is zero clocks for input buffers) to ensure that the written data is not masked. A fixed-length READ burst may be followed by, or truncated with, a PRECHARGE command to the same bank (provided that auto precharge was not activated), and a full-page burst may be truncated with a PRECHARGE command to the same bank.The PRECHARGE command should be issued x cycles before the clock edge at which the last desired data element is valid, where x equals the CAS latency minus one. This is shown in the READ to PRECHARGE Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 IS42S16400F IS45S16400F diagram for each possible CAS latency; data element n + 3 is either the last of a burst of four or the last desired of a longer burst. Following the PRECHARGE command, a subsequent command to the same bank cannot be issued until trp is met. Note that part of the row precharge time is hidden during the access of the last data element(s). In the case of a fixed-length burst being executed to completion, a PRECHARGE command issued at the optimum time (as described above) provides the same operation that would result from the same fixed-length burst with auto precharge. The disadvantage of the PRECHARGE command is that it requires that the command and address buses be available at the appropriate time to issue the command; the advantage of the PRECHARGE command is that it can be used to truncate fixed-length or full-page bursts. Full-page READ bursts can be truncated with the BURST TERMINATE command, and fixed-length READ bursts may be truncated with a BURST TERMINATE command, provided that auto precharge was not activated.The BURST TERMINATE command should be issued x cycles before the clock edge at which the last desired data element is valid, where x equals the CAS latency minus one. This is shown in the READ Burst Termination diagram for each possible CAS latency; data element n + 3 is the last desired data element of a longer burst. CAS Latency T0 T1 T2 T3 READ NOP NOP CLK COMMAND tAC DOUT DQ tOH tLZ CAS Latency - 2 T0 T1 T2 T3 T4 READ NOP NOP NOP CLK COMMAND tAC DOUT DQ tLZ tOH CAS Latency - 3 DON'T CARE UNDEFINED Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 23 IS42S16400F IS45S16400F Consecutive READ Bursts T0 T1 T2 T3 T4 T5 T6 READ NOP NOP NOP READ NOP NOP DOUT n+3 DOUT b CLK COMMAND x =1 cycle BANK, COL n ADDRESS BANK, COL b DQ DOUT n DOUT n+1 DOUT n+2 CAS Latency - 2 DON'T CARE T0 T1 T2 T3 T4 READ NOP NOP NOP READ T5 T6 T7 NOP NOP NOP DOUT n+3 DOUT b CLK COMMAND x = 2 cycles ADDRESS BANK, COL n BANK, COL b DQ DOUT n DOUT n+1 DOUT n+2 CAS Latency - 3 DON'T CARE 24 Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 IS42S16400F IS45S16400F Random READ Accesses T0 T1 T2 T3 T4 T5 COMMAND READ READ READ READ NOP NOP ADDRESS BANK, COL n BANK, COL b BANK, COL m BANK, COL x CLK DQ DOUT n DOUT b DOUT m DOUT x CAS Latency - 2 DON'T CARE T0 T1 T2 T3 T4 T5 T6 COMMAND READ READ READ READ NOP NOP NOP ADDRESS BANK, COL n BANK, COL b BANK, COL m BANK, COL x CLK DQ DOUT n DOUT b DOUT m DOUT x CAS Latency - 3 DON'T CARE Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 25 IS42S16400F IS45S16400F RW1 - READ to WRITE T0 T1 T2 T3 T4 T5 T6 COMMAND READ NOP NOP NOP NOP NOP WRITE ADDRESS BANK, COL n CLK DQM BANK, COL b tHZ DOUT n DQ DOUT n+1 DIN b DOUT n+2 CAS Latency - 2 tDS DON'T CARE RW2 - READ to WRITE T0 T1 T2 T3 T4 T5 COMMAND READ NOP NOP NOP NOP WRITE ADDRESS BANK, COL n CLK DQM BANK, COL b tHZ DOUT n DQ CAS Latency - 3 DIN b tDS DON'T CARE 26 Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 IS42S16400F IS45S16400F READ to PRECHARGE T0 T1 T2 T3 T4 T5 T6 T7 CLK tRP COMMAND READ NOP NOP NOP NOP PRECHARGE NOP ACTIVE x = 1 cycle ADDRESS BANK a, COL n BANK (a or all) DQ DOUT n DOUT n+1 BANK a, ROW DOUT n+2 DOUT n+3 CAS Latency - 2 DON'T CARE T0 T1 T2 T3 T4 T5 T6 T7 CLK tRP COMMAND READ NOP NOP NOP NOP PRECHARGE NOP ACTIVE x = 2 cycles ADDRESS BANK, COL n BANK, COL b DQ DOUT n DOUT n+1 BANK a, ROW DOUT n+2 DOUT n+3 CAS Latency - 3 DON'T CARE Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 27 IS42S16400F IS45S16400F READ Burst Termination T0 T1 T2 T3 T4 READ NOP NOP NOP T5 T6 NOP NOP CLK COMMAND BURST TERMINATE x = 1 cycle BANK a, COL n ADDRESS DQ DOUT n DOUT n+1 DOUT n+2 DOUT n+3 CAS Latency - 2 DON'T CARE T0 T1 T2 T3 READ NOP NOP NOP T4 T5 T6 T7 NOP NOP NOP CLK COMMAND BURST TERMINATE x = 2 cycles ADDRESS BANK, COL n DQ DOUT n DOUT n+1 DOUT n+2 DOUT n+3 CAS Latency - 3 DON'T CARE 28 Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 IS42S16400F IS45S16400F WRITEs WRITE bursts are initiated with a WRITE command, as shown in WRITE Command diagram. WRITE Command CLK CKE HIGH CS RAS CAS WE A0-A7 COLUMN ADDRESS A8, A9, A11 AUTO PRECHARGE A10 NO PRECHARGE BA0, BA1 BANK ADDRESS The starting column and bank addresses are provided with the WRITE command, and auto precharge is either enabled or disabled for that access. If auto precharge is enabled, the row being accessed is precharged at the completion of the burst. For the generic WRITE commands used in the following illustrations, auto precharge is disabled. During WRITE bursts, the first valid data-in element will be registered coincident with the WRITE command. Subsequent data elements will be registered on each successive positive clock edge. Upon completion of a fixed-length burst, assuming no other commands have been initiated, the DQs will remain High-Z and any additional input data will be ignored (see WRITE Burst). A full-page burst will continue until terminated. (At the end of the page, it will wrap to column 0 and continue.) Data for any WRITE burst may be truncated with a subsequent WRITE command, and data for a fixed-length WRITE burst may be immediately followed by data for a WRITE command. The new WRITE command can be issued on any clock following the previous WRITE command, and the data provided coincident with the new command applies to the new command. Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 An example is shown in WRITE to WRITE diagram. Data n + 1 is either the last of a burst of two or the last desired of a longer burst. The 64Mb SDRAM uses a pipelined architecture and therefore does not require the 2n rule associated with a prefetch architecture. A WRITE command can be initiated on any clock cycle following a previous WRITE command. Full-speed random write accesses within a page can be performed to the same bank, as shown in Random WRITE Cycles, or each subsequent WRITE may be performed to a different bank. Data for any WRITE burst may be truncated with a subsequent READ command, and data for a fixed-length WRITE burst may be immediately followed by a subsequent READ command. Once the READ command is registered, the data inputs will be ignored, and WRITEs will not be executed. An example is shown in WRITE to READ. Data n + 1 is either the last of a burst of two or the last desired of a longer burst. Data for a fixed-length WRITE burst may be followed by, or truncated with, a PRECHARGE command to the same bank (provided that auto precharge was not activated), and a full-page WRITE burst may be truncated with a PRECHARGE command to the same bank. The PRECHARGE command should be issued twr after the clock edge at which the last desired input data element is registered. The auto precharge mode requires a twr of at least one clock plus time, regardless of frequency. In addition, when truncating a WRITE burst, the DQM signal must be used to mask input data for the clock edge prior to, and the clock edge coincident with, the PRECHARGE command. An example is shown in the WRITE to PRECHARGE diagram. Data n+1 is either the last of a burst of two or the last desired of a longer burst. Following the PRECHARGE command, a subsequent command to the same bank cannot be issued until trp is met. In the case of a fixed-length burst being executed to completion, a PRECHARGE command issued at the optimum time (as described above) provides the same operation that would result from the same fixed-length burst with auto precharge.The disadvantage of the PRECHARGE command is that it requires that the command and address buses be available at the appropriate time to issue the command; the advantage of the PRECHARGE command is that it can be used to truncate fixed-length or full-page bursts. Fixed-length or full-page WRITE bursts can be truncated with the BURST TERMINATE command. When truncating a WRITE burst, the input data applied coincident with the BURST TERMINATE command will be ignored. The last data written (provided that DQM is LOW at that time) will be the input data applied one clock previous to the BURST TERMINATE command. This is shown in WRITE Burst Termination, where data n is the last desired data element of a longer burst. 29 IS42S16400F IS45S16400F WRITE Burst T0 T1 T2 T3 COMMAND WRITE NOP NOP NOP ADDRESS BANK, COL n CLK DQ DIN n DIN n+1 DON'T CARE WRITE to WRITE T0 T1 T2 COMMAND WRITE NOP WRITE ADDRESS BANK, COL n CLK DQ BANK, COL b DIN n DIN n+1 DIN b DON'T CARE Random WRITE Cycles T0 T1 T2 T3 COMMAND WRITE WRITE WRITE WRITE ADDRESS BANK, COL n BANK, COL b BANK, COL m BANK, COL x DIN b DIN m DIN x CLK DQ 30 DIN n Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 IS42S16400F IS45S16400F WRITE to READ T0 T1 T2 T3 T4 T5 COMMAND WRITE NOP READ NOP NOP NOP ADDRESS BANK, COL n DOUT b DOUT b+1 CLK DQ BANK, COL b DIN n DIN n+1 CAS Latency - 2 DON'T CARE WP1 - WRITE to PRECHARGE T0 T1 T2 T3 T4 T5 T6 NOP NOP CLK DQM tRP COMMAND WRITE ADDRESS BANK a, COL n NOP PRECHARGE NOP BANK (a or all) ACTIVE BANK a, ROW tWR DQ DIN n DIN n+1 CAS Latency - 2 Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 DON'T CARE 31 IS42S16400F IS45S16400F WP2 - WRITE to PRECHARGE T0 T1 T2 T3 T4 T5 T6 CLK DQM tRP COMMAND WRITE ADDRESS BANK a, COL n NOP PRECHARGE NOP NOP BANK (a or all) ACTIVE NOP BANK a, ROW tWR DQ DIN n DIN n+1 CAS Latency - 3 DON'T CARE WRITE Burst Termination T0 T1 T2 COMMAND WRITE BURST TERMINATE NEXT COMMAND ADDRESS BANK, COL n CLK DQ DIN n (ADDRESS) (DATA) DON'T CARE 32 Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 IS42S16400F IS45S16400F PRECHARGE PRECHARGE Command The PRECHARGE command (see figure) is used to deactivate the open row in a particular bank or the open row in all banks.The bank(s) will be available for a subsequent row access some specified time (trp) after the PRECHARGE command is issued. Input A10 determines whether one or all banks are to be precharged, and in the case where only one bank is to be precharged, inputs BA0, BA1 select the bank. When all banks are to be precharged, inputs BA0, BA1 are treated as "Don't Care." Once a bank has been precharged, it is in the idle state and must be activated prior to any READ or WRITE commands being issued to that bank. CLK CKE HIGH CS RAS CAS WE POWER-DOWN A0-A9, A11 Power-down occurs if CKE is registered LOW coincident with a NOP or COMMAND INHIBIT when no accesses are in progress. If power-down occurs when all banks are idle, this mode is referred to as precharge power-down; if power-down occurs when there is a row active in either bank, this mode is referred to as active power-down. Entering power-down deactivates the input and output buffers, excluding CKE, for maximum power savings while in standby. The device may not remain in the power-down state longer than the refresh period (64ms) since no refresh operations are performed in this mode. The power-down state is exited by registering a NOP or COMMAND INHIBIT and CKE HIGH at the desired clock edge (meeting tcks). See figure below. ALL BANKS A10 BANK SELECT BA0, BA1 BANK ADDRESS POWER-DOWN CLK tCKS tCKS CKE COMMAND NOP All banks idle NOP Input buffers gated off Enter power-down mode Exit power-down mode ACTIVE tRCD tRAS tRC DON'T CARE Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 33 IS42S16400F IS45S16400F CLOCK SUSPEND Clock suspend mode occurs when a column access/burst is in progress and CKE is registered LOW. In the clock suspend mode, the internal clock is deactivated, "freezing" the synchronous logic. For each positive clock edge on which CKE is sampled LOW, the next internal positive clock edge is suspended. Any command or data present on the input pins at the time of a suspended internal clock edge is ignored; any data present on the DQ pins remains driven; and burst counters are not incremented, as long as the clock is suspended. (See following examples.) Clock suspend mode is exited by registering CKE HIGH; the internal clock and related operation will resume on the subsequent positive clock edge. Clock Suspend During WRITE Burst T0 T1 NOP WRITE T2 T3 T4 T5 NOP NOP DIN n+1 DIN n+2 CLK CKE INTERNAL CLOCK COMMAND BANK a, COL n ADDRESS DQ DIN n DON'T CARE Clock Suspend During READ Burst T0 T1 T2 COMMAND READ NOP NOP ADDRESS BANK a, COL n T3 T4 T5 T6 NOP NOP NOP CLK CKE INTERNAL CLOCK DQ DOUT n DOUT n+1 DOUT n+2 DOUT n+3 DON'T CARE 34 Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 IS42S16400F IS45S16400F BURST READ/SINGLE WRITE The burst read/single write mode is entered by programming the write burst mode bit (M9) in the mode register to a logic 1. In this mode, all WRITE commands result in the access of a single column location (burst of one), regardless of the programmed burst length. READ commands access columns according to the programmed burst length and sequence, just as in the normal mode of operation (M9 = 0). SDRAMs support CONCURRENT AUTO PRECHARGE. Four cases where CONCURRENT AUTO PRECHARGE occurs are defined below. READ with Auto Precharge 1. Interrupted by a READ (with or without auto precharge): A READ to bank m will interrupt a READ on bank n, CAS latency later. The PRECHARGE to bank n will begin when the READ to bank m is registered. 2. Interrupted by a WRITE (with or without auto precharge): A WRITE to bank m will interrupt a READ on bank n when registered. DQM should be used two clocks prior to the WRITE command to prevent bus contention. The PRECHARGE to bank n will begin when the WRITE to bank m is registered. CONCURRENT AUTO PRECHARGE An access command (READ or WRITE) to another bank while an access command with auto precharge enabled is executing is not allowed by SDRAMs, unless the SDRAM supports CONCURRENT AUTO PRECHARGE. ISSI Fig CAP 1 - READ With Auto Precharge interrupted by a READ T0 T1 T2 T3 T4 T5 T6 T7 NOP NOP NOP NOP CLK NOP COMMAND BANK n READ - AP BANK n Page Active NOP READ - AP BANK m READ with Burst of 4 Interrupt Burst, Precharge Internal States BANK m ADDRESS Idle tRP - BANK n Page Active tRP - BANK m READ with Burst of 4 BANK n, COL a Precharge BANK m, COL b DQ DOUT a DOUT a+1 DOUT b DOUT b+1 CAS Latency - 3 (BANK n) DON'T CARE CAS Latency - 3 (BANK m) Fig CAP 2 - READ With Auto Precharge interrupted by a WRITE T0 T1 T2 T3 NOP NOP NOP T4 T5 T6 T7 NOP NOP NOP CLK COMMAND WRITE - AP BANK n BANK n READ with Burst of 4 Internal States Interrupt Burst, Precharge Page Active BANK m ADDRESS WRITE - AP BANK m tRP - BANK n Page Active WRITE with Burst of 4 BANK n, COL a Idle tRP - BANK m Write-Back BANK m, COL b DQM DOUT a DQ CAS Latency - 3 (BANK n) Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 DIN b DIN b+1 DIN b+2 DIN b+3 DON'T CARE 35 IS42S16400F IS45S16400F WRITE with Auto Precharge 4. Interrupted by a WRITE (with or without auto precharge): AWRITE to bank m will interrupt a WRITE on bank n when registered. The PRECHARGE to bank n will begin after twr is met, where twr begins when the WRITE to bank m is registered. The last valid data WRITE to bank n will be data registered one clock prior to a WRITE to bank m. 3. Interrupted by a READ (with or without auto precharge): A READ to bank m will interrupt a WRITE on bank n when registered, with the data-out appearing CAS latency later. The PRECHARGE to bank n will begin after twr is met, where twr begins when the READ to bank m is registered. The last valid WRITE to bank n will be data-in registered one clock prior to the READ to bank m. Fig CAP 3 - WRITE With Auto Precharge interrupted by a READ T0 T1 T2 T3 T4 T5 T6 T7 NOP NOP NOP NOP CLK NOP COMMAND BANK n WRITE - AP BANK n Page Active NOP READ - AP BANK m WRITE with Burst of 4 Interrupt Burst, Write-Back Precharge tWR - BANK n tRP - BANK n Internal States BANK m Page Active READ with Burst of 4 BANK n, COL a ADDRESS DQ tRP - BANK m Precharge BANK m, COL b DIN a DIN a+1 DOUT b DOUT b+1 CAS Latency - 3 (BANK m) DON'T CARE Fig CAP 4 - WRITE With Auto Precharge interrupted by a WRITE T0 T1 T2 T3 NOP NOP T4 T5 T6 T7 NOP NOP NOP CLK NOP COMMAND BANK n WRITE - AP BANK n Page Active WRITE with Burst of 4 WRITE - AP BANK m Interrupt Burst, Write-Back tWR - BANK n Internal States BANK m ADDRESS DQ Page Active DIN a tRP - BANK n tRP - BANK m WRITE with Burst of 4 BANK n, COL a Precharge Write-Back BANK m, COL b DIN a+1 DIN a+2 DIN b DIN b+1 DIN b+2 DIN b+3 DON'T CARE 36 Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 IS42S16400F IS45S16400F Initialize and Load Mode Register(1) T0 CLK T1 tCK Tn+1 tCH To+1 tCL Tp+1 Tp+2 Tp+3 tCKS tCKH CKE COMMAND tCMS tCMH tCMS tCMH tCMS tCMH NOP PRECHARGE AUTO REFRESH NOP AUTO REFRESH NOP Load MODE REGISTER NOP ACTIVE DQM/ DQML, DQMH tAS tAH A0-A9, A11 ALL BANKS A10 CODE tAS tAH ROW CODE ROW SINGLE BANK BA0, BA1 BANK ALL BANKS DQ T Power-up: VCC and CLK stable T = 100s Min. tRP Precharge all banks tRC AUTO REFRESH tRC AUTO REFRESH At least 2 Auto-Refresh Commands tMRD Program MODE REGISTER (2, 3, 4) DON'T CARE Notes: 1. If CS is High at clock High time, all commands applied are NOP. 2. The Mode register may be loaded prior to the Auto-Refresh cycles if desired. 3. JEDEC and PC100 specify three clocks. 4. Outputs are guaranteed High-Z after the command is issued. Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 37 IS42S16400F IS45S16400F Power-Down Mode Cycle T0 T1 tCK CLK tCKS tCKH T2 tCL Tn+1 Tn+2 tCH tCKS tCKS CKE tCMS tCMH COMMAND PRECHARGE NOP NOP NOP ACTIVE DQM/ DQML, DQMH ROW A0-A9, A11 ALL BANKS A10 ROW SINGLE BANK tAS tAH BA0, BA1 BANK BANK DQ High-Z Two clock cycles Precharge all active banks All banks idle, enter power-down mode Input buffers gated off while in power-down mode All banks idle Exit power-down mode DON'T CARE CAS latency = 2, 3 38 Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 IS42S16400F IS45S16400F Clock Suspend Mode T0 CLK tCK T1 tCKS tCKH tCL T2 tCH T3 T4 T5 T6 NOP NOP NOP T7 T8 T9 tCKS tCKH CKE tCMS tCMH COMMAND READ NOP NOP WRITE NOP tCMS tCMH DQM/ DQML, DQMH tAS tAH A0-A9, A11 COLUMN m(2) tAS tAH COLUMN n(2) A10 tAS tAH BA0, BA1 BANK BANK tAC tAC DOUT m DQ tLZ tHZ DOUT m+1 tDS tDH DOUT e DOUT e+1 tOH DON'T CARE UNDEFINED Notes: 1. CAS latency = 3, burst length = 2 2. A8, A9, and A11 = "Don't Care" Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 39 IS42S16400F IS45S16400F Auto-Refresh Cycle T0 CLK tCK T1 tCL T2 Tn+1 tCH To+1 tCKS tCKH CKE tCMS tCMH COMMAND PRECHARGE NOP Auto Refresh NOP Auto Refresh NOP ACTIVE DQM/ DQML, DQMH A0-A9, A11 ROW ALL BANKS A10 ROW SINGLE BANK BA0, BA1 DQ BANK BANK(s) tAS tAH High-Z tRP tRC tRC DON'T CARE CAS latency = 2, 3 40 Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 IS42S16400F IS45S16400F Self-Refresh Cycle T0 T1 tCK CLK T2 tCH tCKS tCKH Tn+1 To+1 To+2 tCL tCKS tRAS CKE tCKS tCMS tCMH COMMAND PRECHARGE NOP Auto Refresh NOP NOP Auto Refresh DQM/ DQML, DQMH A0-A9, A11 ALL BANKS A10 SINGLE BANK tAS tAH BA0, BA1 BANK DQ High-Z Precharge all active banks tXSR tRP Enter self refresh mode CLK stable prior to exiting Exit self refresh mode self refresh mode (Restart refresh time base) DON'T CARE Note: 1. Self-Refresh Mode is not supported for A2 grade with Ta > 85oC. Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 41 IS42S16400F IS45S16400F READ WITHOUT AUTO PRECHARGE T0 CLK tCK T1 tCL T2 tCH T3 T4 T5 T6 T7 T8 NOP ACTIVE tCKS tCKH CKE tCMS tCMH COMMAND ACTIVE NOP READ NOP NOP NOP PRECHARGE tCMS tCMH DQM/ DQML, DQMH tAS tAH A0-A9, A11 ROW tAS tAH A10 ROW tAS tAH DISABLE AUTO PRECHARGE BANK BANK BA0, BA1 COLUMN m(2) ROW ALL BANKS ROW SINGLE BANK DQ tRCD tRAS tRC BANK BANK tAC tLZ CAS Latency tAC DOUT m tAC DOUT m+1 tAC DOUT m+2 tHZ DOUT m+3 tOH tOH tOH tOH DON'T CARE tRP UNDEFINED Notes: 1. CAS latency = 2, burst length = 4 2. A8, A9, and A11 = "Don't Care" 42 Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 IS42S16400F IS45S16400F READ WITH AUTO PRECHARGE T0 CLK tCK T1 tCL T2 T3 tCH T4 T5 T6 T7 T8 NOP ACTIVE tCKS tCKH CKE tCMS tCMH COMMAND ACTIVE NOP READ NOP NOP NOP NOP tCMS tCMH DQM/ DQML, DQMH tAS tAH A0-A9, A11 ROW tAS tAH A10 ROW tAS tAH BA0, BA1 BANK COLUMN m(2) ROW ENABLE AUTO PRECHARGE ROW BANK BANK tAC DQ tRCD tLZ CAS Latency tRAS tRC tAC DOUT m tAC DOUT m+1 tAC DOUT m+2 tHZ DOUT m+3 tOH tOH tOH tOH tRP DON'T CARE UNDEFINED Notes: 1. CAS latency = 2, burst length = 4 2. A8, A9, and A11 = "Don't Care" Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 43 IS42S16400F IS45S16400F SINGLE READ WITHOUT AUTO PRECHARGE T0 CLK tCK T1 tCL T2 tCH T3 T4 T5 T6 T7 T8 ACTIVE NOP tCKS tCKH CKE tCMS tCMH COMMAND ACTIVE NOP READ NOP NOP PRECHARGE NOP tCMS tCMH DQM/ DQML, DQMH tAS tAH A0-A9, A11 ROW tAS tAH A10 ROW tAS tAH DISABLE AUTO PRECHARGE BANK BANK BA0, BA1 COLUMN m(2) ROW ALL BANKS ROW SINGLE BANK BANK tAC BANK tOH DOUT m DQ tRCD tRAS tRC tLZ CAS Latency tHZ DON'T CARE tRP UNDEFINED Notes: 1. CAS latency = 2, burst length = 1 2. A8, A9, and A11 = "Don't Care" 44 Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 IS42S16400F IS45S16400F SINGLE READ WITH AUTO PRECHARGE T0 CLK tCK T1 tCL T2 tCH T3 T4 T5 T6 T7 NOP NOP T8 tCKS tCKH CKE tCMS tCMH COMMAND ACTIVE NOP NOP NOP READ ACTIVE NOP tCMS tCMH DQM/ DQML, DQMH tAS tAH A0-A9, A11 ROW tAS tAH A10 ROW tAS tAH BA0, BA1 BANK COLUMN m(2) ROW ENABLE AUTO PRECHARGE ROW BANK BANK tOH tAC DOUT m DQ tRCD tRAS tRC tHZ CAS Latency tRP DON'T CARE UNDEFINED Notes: 1. CAS latency = 2, burst length = 1 2. A8, A9, and A11 = "Don't Care" Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 45 IS42S16400F IS45S16400F ALTERNATING BANK READ ACCESSES T0 CLK tCK T1 tCL T2 tCH T3 T4 T5 T6 T7 T8 NOP READ NOP tCKS tCKH CKE tCMS tCMH COMMAND ACTIVE NOP READ NOP ACTIVE ACTIVE tCMS tCMH DQM/ DQML, DQMH tAS tAH A0-A9, A11 COLUMN m(2) ROW tAS tAH A10 ROW tAS tAH BA0, BA1 BANK 0 COLUMN b(2) ROW ENABLE AUTO PRECHARGE ROW ENABLE AUTO PRECHARGE ROW BANK 0 ROW BANK 3 tLZ BANK 3 tOH tOH DQ DOUT m tAC tRCD - BANK 0 tRRD tOH DOUT m+1 tAC BANK 0 tAC tOH DOUT m+2 tOH DOUT m+3 tAC tAC tRP - BANK 0 CAS Latency - BANK 0 tRCD - BANK 3 DOUT b tAC tRCD - BANK 0 CAS Latency - BANK 3 tRAS - BANK 0 tRC - BANK 0 DON'T CARE Notes: 1. CAS latency = 2, burst length = 4 2. A8, A9, and A11 = "Don't Care" 46 Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 IS42S16400F IS45S16400F READ - FULL-PAGE BURST T0 CLK tCK T1 tCL T2 T3 tCH T4 T5 T6 Tn+1 NOP NOP NOP Tn+2 Tn+3 Tn+4 NOP NOP tCKS tCKH CKE tCMS tCMH COMMAND ACTIVE NOP READ NOP NOP BURST TERM tCMS tCMH DQM/ DQML, DQMH tAS tAH A0-A9, A11 ROW tAS tAH A10 ROW tAS tAH BA0, BA1 BANK COLUMN m(2) BANK tAC DQ tLZ tRCD CAS Latency tAC DOUT m tAC DOUT m+1 tOH tOH each row (x4) has 1,024 locations tAC DOUT m+2 tOH tAC DOUT m-1 tAC DOUT m tHZ DOUT m+1 tOH tOH tOH DON'T CARE Full page Full-page burst not self-terminating. completion Use BURST TERMINATE command. UNDEFINED Notes: 1. CAS latency = 2, burst length = full page 2. A8, A9, and A11 = "Don't Care" Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 47 IS42S16400F IS45S16400F READ - DQM OPERATION T0 CLK tCK T1 tCL T2 T3 T4 T5 T6 T7 T8 NOP NOP NOP NOP NOP NOP tCH tCKS tCKH CKE tCMS tCMH COMMAND ACTIVE NOP READ tCMS tCMH DQM/ DQML, DQMH tAS tAH A0-A9, A11 ROW tAS tAH A10 ROW tAS tAH DISABLE AUTO PRECHARGE BANK BANK BA0, BA1 COLUMN m(2) ENABLE AUTO PRECHARGE tAC DQ tLZ tRCD CAS Latency tOH DOUT m tHZ tAC tLZ tOH DOUT m+2 tAC tOH DOUT m+3 tHZ DON'T CARE UNDEFINED Notes: 1. CAS latency = 2, burst length = 4 2. A8, A9, and A11 = "Don't Care" 48 Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 IS42S16400F IS45S16400F WRITE - WITHOUT AUTO PRECHARGE T0 CLK tCK T1 tCL T2 tCH T3 T4 T5 T6 NOP NOP NOP T7 T8 tCKS tCKH CKE tCMS tCMH COMMAND ACTIVE NOP WRITE PRECHARGE NOP ACTIVE tCMS tCMH DQM/ DQML, DQMH tAS tAH A0-A9, A11 ROW tAS tAH A10 ROW tAS tAH BA0, BA1 COLUMN m(2) ROW ALL BANKS ROW SINGLE BANK DISABLE AUTO PRECHARGE BANK BANK tDS DQ tDH DIN m BANK tDS tDH DIN m+1 tRCD tRAS tRC tDS tDH DIN m+2 tDS BANK tDH DIN m+3 tWR(3) tRP DON'T CARE Notes: 1. burst length = 4 2. A8, A9, and A11 = "Don't Care" 3. tras must not be violated Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 49 IS42S16400F IS45S16400F WRITE - WITH AUTO PRECHARGE T0 CLK tCK T1 T2 tCL tCH T3 T4 T5 T6 T7 T8 T9 NOP NOP NOP NOP NOP NOP ACTIVE tCKS tCKH CKE tCMS tCMH COMMAND ACTIVE NOP WRITE tCMS tCMH DQM/ DQML, DQMH tAS tAH A0-A9, A11 ROW tAS tAH A10 ROW tAS tAH BA0, BA1 BANK COLUMN m(2) ROW ENABLE AUTO PRECHARGE ROW BANK tDS DQ tDH DIN m tRCD tRAS tRC BANK tDS tDH DIN m+1 tDS tDH DIN m+2 tDS tDH DIN m+3 tWR tRP DON'T CARE Notes: 1. burst length = 4 2. A8, A9, and A11 = "Don't Care" 50 Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 IS42S16400F IS45S16400F SINGLE WRITE - WITHOUT AUTO PRECHARGE T0 tCK CLK T1 tCL T2 tCH T3 T4 T5 T6 T7 T8 tCKS tCKH CKE tCMS tCMH COMMAND ACTIVE NOP WRITE NOP(4) NOP(4) PRECHARGE NOP ACTIVE NOP tCMS tCMH DQM/ DQML, DQMH tAS tAH A0-A9, A11 ROW tAS tAH A10 ROW tAS tAH BA0, BA1 COLUMN m(2) ROW ALL BANKS ROW SINGLE BANK DISABLE AUTO PRECHARGE BANK BANK BANK BANK tDS tDH DQ DIN m tRCD tRAS tRC tWR(3) tRP DON'T CARE Notes: 1. burst length = 1 2. A8, A9, and A11 = "Don't Care" 3. tras must not be violated Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 51 IS42S16400F IS45S16400F SINGLE WRITE - WITH AUTO PRECHARGE T0 tCK CLK T1 tCL T2 tCH T3 T4 T5 T6 T7 NOP NOP NOP T8 T9 tCKS tCKH CKE tCMS tCMH COMMAND ACTIVE NOP(3) NOP(3) NOP(3) WRITE ACTIVE NOP tCMS tCMH DQM/ DQML, DQMH tAS tAH A0-A9, A11 ROW tAS tAH A10 ROW tAS tAH BA0, BA1 BANK COLUMN m(2) ROW ENABLE AUTO PRECHARGE ROW BANK BANK tDS tDH DQ DIN m tRCD tRAS tRC tWR tRP DON'T CARE Notes: 1. burst length = 1 2. A8, A9, and A11 = "Don't Care" 52 Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 IS42S16400F IS45S16400F ALTERNATING BANK WRITE ACCESS T0 tCK CLK T1 T2 tCL tCH T3 T4 T5 T6 T7 T8 T9 NOP NOP tCKS tCKH CKE tCMS tCMH COMMAND ACTIVE NOP WRITE NOP ACTIVE NOP WRITE ACTIVE tCMS tCMH DQM/ DQML, DQMH tAS tAH A0-A9, A11 ROW tAS tAH A10 ROW tAS tAH BA0, BA1 BANK 0 COLUMN m(2) COLUMN b(2) ROW ENABLE AUTO PRECHARGE ROW ENABLE AUTO PRECHARGE ROW BANK 0 tDS DQ tDH DIN m ROW BANK 1 tDS tDH DIN m+1 tRCD - BANK 0 tRRD tRAS - BANK 0 tRC - BANK 0 BANK 1 tDS tDS tDH DIN m+2 tDH DIN m+3 tDS tDH DIN b tWR - BANK 0 tRCD - BANK 1 BANK 0 tDS tDH DIN b+1 tDS tDH DIN b+2 tRP - BANK 0 tDS tDH DIN b+3 tRCD - BANK 0 tWR - BANK 1 DON'T CARE Notes: 1. burst length = 4 2. A8, A9, and A11 = "Don't Care" Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 53 IS42S16400F IS45S16400F write - full page burst T0 T1 tCK CLK T2 tCL T3 T4 T5 Tn+1 Tn+2 NOP NOP NOP NOP BURST TERM tDS tDH tDS tDH tDS DIN m+1 DIN m+2 DIN m+3 tCH tCKS tCKH CKE tCMS tCMH COMMAND ACTIVE NOP WRITE NOP tCMS tCMH DQM/ DQML, DQMH tAS tAH A0-A9, A11 ROW tAS tAH A10 ROW tAS tAH BA0, BA1 BANK COLUMN m(2) BANK tDS tDH DIN m DQ tRCD tDH tDS tDH tDS tDH DIN m-1 Full page completed DON'T CARE Notes: 1. burst length = full page 2. A8, A9, and A11 = "Don't Care" 54 Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 IS42S16400F IS45S16400F WRITE - DQM OPERATION T0 T1 T2 tCK CLK tCL T3 T4 T5 T6 T7 NOP NOP NOP NOP NOP tCH tCKS tCKH CKE tCMS tCMH COMMAND ACTIVE NOP WRITE tCMS tCMH DQM/ DQML, DQMH tAS tAH A0-A9, A11 ROW tAS tAH A10 ROW tAS tAH DISABLE AUTO PRECHARGE BANK BANK BA0, BA1 COLUMN m(2) ENABLE AUTO PRECHARGE tDS tDH DIN m DQ tRCD tDS tDH tDS tDH DIN m+2 DIN m+3 DON'T CARE Notes: 1. burst length = 4 2. A8, A9, and A11 = "Don't Care" Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 55 IS42S16400F IS45S16400F ORDERING INFORMATION Commercial Range: 0C to 70C Frequency 200 MHz 200 MHz 166 MHz 166 MHz 143 MHz 143 MHz Speed (ns) 5 5 6 6 7 7 Order Part No. IS42S16400F-5TL IS42S16400F-5BL IS42S16400F-6TL IS42S16400F-6BL IS42S16400F-7TL IS42S16400F-7BL Package 54-Pin TSOPII, Alloy42 leadframe plated with matte Sn 54-ball BGA, SnAgCu balls 54-Pin TSOPII, Alloy42 leadframe plated with matte Sn 54-ball BGA, SnAgCu balls 54-Pin TSOPII, Alloy42 leadframe plated with matte Sn 54-ball BGA, SnAgCu balls Industrial Range: -40C to 85C Frequency 200 MHz 200 MHz 166 MHz 166 MHz 143 MHz 143 MHz Speed (ns) 5 5 6 6 7 7 Order Part No. IS42S16400F-5TLI IS42S16400F-5BLI IS42S16400F-6TLI IS42S16400F-6BLI IS42S16400F-7TLI IS42S16400F-7BLI Package 54-Pin TSOPII, Alloy42 leadframe plated with matte Sn 54-ball BGA, SnAgCu balls 54-Pin TSOPII, Alloy42 leadframe plated with matte Sn 54-ball BGA, SnAgCu balls 54-Pin TSOPII, Alloy42 leadframe plated with matte Sn 54-ball BGA, SnAgCu balls Automotive Range (A1): -40C to 85C Frequency 200 MHz 200 MHz 166 MHz 166 MHz 166 MHz 166 MHz 143 MHz 143 MHz 143 MHz 143 MHz Speed (ns) 5 5 6 6 6 6 7 7 7 7 Order Part No. IS45S16400F-5TLA1 IS45S16400F-5BLA1 IS45S16400F-6TLA1 IS45S16400F-6CTLA1 IS45S16400F-6CTNA1 IS45S16400F-6BLA1 IS45S16400F-7TLA1 IS45S16400F-7CTLA1 IS45S16400F-7CTNA1 IS45S16400F-7BLA1 Package 54-Pin TSOPII, Alloy42 leadframe plated with matte Sn 54-ball BGA, SnAgCu balls 54-Pin TSOPII, Alloy42 leadframe plated with matte Sn 54-Pin TSOPII, Cu leadframe plated with matte Sn 54-Pin TSOPII, Cu leadframe plated with NiPdAu 54-ball BGA, SnAgCu balls 54-Pin TSOPII, Alloy42 leadframe plated with matte Sn 54-Pin TSOPII, Cu leadframe plated with matte Sn 54-Pin TSOPII, Cu leadframe plated with NiPdAu 54-ball BGA, SnAgCu balls Automotive Range (A2): -40C to 105C Frequency 143 MHz 143 MHz 143 MHz 143 MHz Speed (ns) 7 7 7 7 Order Part No. IS45S16400F-7BLA2 IS45S16400F-7TLA2 IS45S16400F-7CTLA2 IS45S16400F-7CTNA2 Package 54-ball BGA, SnAgCu balls 54-Pin TSOPII, Alloy42 leadframe plated with matte Sn 54-Pin TSOPII, Cu leadframe plated with matte Sn 54-Pin TSOPII, Cu leadframe plated with NiPdAu Notes: 1. Contact ISSI for leaded and copper leadframe parts support. 2. Part numbers with "L" or "N" are leadfree, and RoHS compliant. 56 Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 IS42S16400F IS45S16400F For Alloy42 and Cu lead-frames with matte Sn plating Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 57 IS42S16400F IS45S16400F 58 Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 Package Outline 10/17/2007 IS42S16400F IS45S16400F Integrated Silicon Solution, Inc. -- www.issi.com Rev. I 12/01/2011 59